Search results for "Semiconductor"
showing 10 items of 974 documents
Electromechanical Behavior of Single and Multiwall Carbon Nanotubes
2008
Carbon nanotubes (CNTs) can be metallic or semiconductors depending simply on geometric characteristics. This peculiar electronic behavior, combined with high mechanical strength, make them potential building blocks of a new nano-electronic technology. High resolution images of CNTs often disclose structural deformations such as bent, twisted, or collapsed tubes. These deformations break the tube symmetry, and a change in their electronic properties should result. A computationally effective mixed finite element-tight-binding approach able to simulate the electromechanical behavior of single and multiwall nanotubes used in nano-electronic devices is presented. The finite element (FE) comput…
<title>Holographic recording in amorphous chalcogenide semiconductor thin films</title>
2000
ABSTRACT The photoinduced changes ofoptical properties and holographic recording in amorphous chalcogenide semiconductor As-S- Se and As2S3 thin films have been studied. The possibilities of the practical applications of these materials as the photoresists for the production of the relief holograms and holographic optical elements are discussed. It is shown that theself-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light orthermal treatment can be used to increase the diffraction efficiency ofthe holograms.Keywords: chalcogenide semiconductors, amorphous films, photoresists, photoinduced processes, relaxation processes,self-enhancement of h…
Amorphous As–S–Se semiconductor resists for holography and lithography
2002
Abstract The photo- and electron-beam induced changes in solubility of thin films of the amorphous chalcogenide semiconductors As–S–Se and As 2 S 3 have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement (SE) phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency (DE) of the holograms.
<title>Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography</title>
2001
The photo- and electron beam induced changes in solubility of amorphous chalcogenide semiconductor As-S-Se and As2S3 thin films have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
<title>Photo-induced structural changes in near-surface layers of chalcogenide semiconductors</title>
1997
Photoinduced structural changes in near-surface layers of amorphous As-Se and As-S films have been investigated using the microhardness method. Microhardness via indentation depth data for as-deposited, illuminated and aged in ambient atmosphere films is presented. The results obtained show that photoinduced increase in microhardness of surface layers up to approximately 1 - 1.5 micrometer are more pronounced in comparison with deeper layers. Increase in microhardness of the investigated films under exposure to atmosphere was also observed. Atmosphere-induced effect was more pronounced in the case of As-S films. Photo- and atmosphere-induced effects in the near-surface layers were found to …
Dynamic doping in bright and stable light emitting electrochemical cells.
2013
By using fast current density and luminance versus voltage (JL-V) analysis the device operation of sandwiched light emitting electrochemical cells (LECs) during their normal voltage driving operation mode is studied. In LECs the application of a voltage results in the movement of ions changing the state of the device, as a result the JL-V scans need to be performed fast and meet certain conditions to be meaningful. Space-charge limited current behavior is observed once the injection barriers are overcome. The increase of the current density after this point imply that the effective thickness of the devices is reduced which indicates the formation of more conductive regions adjacent to the e…
A theoretical analysis of the structure and properties of B26H30 isomers. Consequences to the laser and semiconductor doping capabilities of large bo…
2019
Decaborane(14), nido-B10H14, is the major commercially available molecular building block in boron cluster chemistry. The condensation of two such {nido-B10} blocks gives the known isomers of B18H22 – a molecule used in the fabrication of p-type semiconductors and capable of blue laser emission. Here, we computationally determine the structures and thermodynamic stabilities of 20 possible B26H30 regioisomers constructed from the fusion of three {nido-B10} blocks with the three subclusters conjoined by two-boron atom shared edges. In addition, density functional theory, time-dependent (TD)-DFT and multiconfigurational CASPT2 methods have been used to model and investigate the physical and ph…
Using crystallographic shear to reduce lattice thermal conductivity: high temperature thermoelectric characterization of the spark plasma sintered Ma…
2013
Engineering of nanoscale structures is a requisite for controlling the electrical and thermal transport in solids, in particular for thermoelectric applications that require a conflicting combination of low thermal conductivity and low electrical resistivity. We report the thermoelectric properties of spark plasma sintered Magnéli phases WO2.90 and WO2.722. The crystallographic shear planes, which are a typical feature of the crystal structures of Magnéli-type metal oxides, lead to a remarkably low thermal conductivity for WO2.90. The figures of merit (ZT = 0.13 at 1100 K for WO2.90 and 0.07 at 1100 K for WO2.722) are relatively high for tungsten-oxygen compounds and metal oxides in general…
Perovskite-Perovskite Homojunctions via Compositional Doping.
2018
One of the most important properties of semiconductors is the possibility of controlling their electronic behavior via intentional doping. Despite the unprecedented progress in the understanding of hybrid metal halide perovskites, extrinsic doping of perovskite remains nearly unexplored and perovskite–perovskite homojunctions have not been reported. Here we present a perovskite–perovskite homojunction obtained by vacuum deposition of stoichiometrically tuned methylammonium lead iodide (MAPI) films. Doping is realized by adjusting the relative deposition rates of MAI and PbI2, obtaining p-type (MAI excess) and n-type (MAI defect) MAPI. The successful stoichiometry change in the thin films is…
On the use of front-end cascode rectifiers based on normally on SiC JFET and Si MOSFET
2014
The new wide band-gap semiconductor devices provide new properties to be explored. Normally on silicon carbide (SiC) JFET power devices have several advantages, in particular low switching losses and the potential capabilities of high temperature and high reverse blocking voltage. Looking for improving the overall efficiency in power converters, new structures based on these power devices might be studied. In this paper, a cascode rectifier based on normally on SiC JFET is presented and analyzed. This rectification structure can be applied as front-end rectifier stage for ac-dc power converters, increasing the overall efficiency of these topologies. A second cascode rectifier based on silic…