Search results for "Semiconductor"
showing 10 items of 974 documents
On the Semiconductor Spectroscopy for Identification of Emergent Contaminants in Transparent Mediums
2021
In this chapter, we present a theoretical study of photoelectronic processes in experimental silicon \({n}^{+}{\text{-}}p{\text{-}}{n}^{+}\) structures with applications in identifying emergent contaminants in aqueous medium. Contribution due to various mechanisms of photon absorption to the total photocurrent is calculated. Various mechanisms, such as the influence of tunneling on the spectral characteristic and selective spectral photosensitivity of samples under investigation were investigated. The nature of the relationship between energy parameters of the absorbed waves and the structural parameters is revealed. Expressions are obtained for photocurrent with and without external diffus…
Photoelectrochemical study of passive films on stainless steel in neutral solutions
1991
Abstract Passive films formed on AISI 304 stainless steel in neutral solutions are studied using photoelectrochemical technique. Photocurrents were investigated as a function of the wavelength of the incident light, the electrode potential and the time. The results of the measurements together with capacity measurements indicate that the passive film on AISI 304 shows characteristics of a highly doped amorphous or highly disordered n-type semiconductor. The potential dependence of the optical gap values and of the photocurrent transients can be interpreted assuming that the passive film is an iron-chromium oxide solid solution.
Polymer Halide Perovskites-Waveguides Integrated in Nanocellulose as a Wearable Amplifier-Photodetector System
2018
Semiconductor organometallic halide (CH 3 NH 3 PbX 3 , X=Cl, Br, I) perovskites (MHP) have emerged as a very high promising material for optoelectronics. Their large absorption coefficients, high electronic mobilities, excellent quantum yield of emission at room temperature and tunable band-gap with the composition resulted in a new generation of photovoltaics and electronic devices. In this work, HPVK materials are successfully incorporated on a nanocellulose (NC) substrate with the intention to exploit the interesting properties of HPVK materials to construct wearable devices. In particular, a bilayer Poly(methyl methacrylate) /HPVK deposited on NC resulted in a suitable waveguide to demo…
Photocurrent spectroscopy of thin passive films
2002
Publisher Summary This chapter reviews theoretical background on the photoelectrochemistry of metal and semiconductor electrodes on which photocurrent spectroscopy (PCS) relies, by focusing particularly on new features that are typical of the photoelectrochemical behavior of thin passive films and usually absent in the behavior of bulk crystalline semiconductors. The chapter also highlights the advantages of PCS in getting in situ information on the structure of the metal-passive-film-electrolyte systems and shows a more recent quantitative use of this technique in characterizing the composition of passive films. The formation of a protective film on a metallic surface is a key step in esta…
Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires
2001
InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.
Recombination processes in unintentionally doped GaTe single crystals
2002
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and…
Photoassisted Mechanisms in Heterogeneous Catalysis: The Role of Surface OH in the Decomposition of Ethanoic Acid on Magnesium Oxide
1989
The photodecomposition of adsorbed ethanoic acid was studied on a number of pure and mixed insulator and semiconductor systems having a wide range of acid-base features. MgO appeared to be much more active than any other oxide when oxygen was not present in the reactant mixture. On the basis of infrared, U.V.-Vis. reflectance and photoluminescence data it is suggested that in this case the surface hydroxy-groups which are known to absorb at wavelengths longer than 300 nm are involved in the photodecomposition process.
On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition
2012
Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°Care presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectr…
Correlation between Zn vacancies and photoluminescence emission in ZnO films.
2006
Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy. Jesus.Zuniga@uv.es Vicente.Munoz@uv.es
Mid gap photoluminescence from GaN:Mn, a magnetic semiconductor
2003
Abstract The defect and morphology of GaN monocrystals with Mn content 10 19 cm −3 were examined by fluorescence confocal microscopy and spectroscopy. The fluorescence spectral investigation was carried out in a region very close to the defect centers. Contrary to earlier results, we did observe a characteristic fluorescence line of Mn corresponding to the 4 T 1 → 6 A 1 and 4 T 2 → 6 A 1 transitions, suggesting the predominant presence of Mn 2+ (d 5 ). In addition, strong emission lines were observed at 1.60 and at 1.85 eV when the sample was excited with light of 436 and 365 nm, respectively. An energy scheme is proposed to explain the observed data coherently.