Search results for "Sputtering"

showing 10 items of 136 documents

Transversal thermovoltages of (1 1 9) Bi2Sr2CaCu2O8+δ thin films on vicinal (1 1 0) SrTiO3 substrates

1997

Abstract Biaxial textured (1 1 9) oriented Bi 2 Sr 2 CaCu 2 O 8+δ thin films were fabricated by DC-Magnetron sputtering on vicinal (1 1 0) SrTiO 3 substrates. The crystal orientation and stochiometry of the films were obtained from precise X-ray diffraction measurements in four-circle geometry. According to anisotropic transport measurements, the superconducting transition temperature is approximately 47 K and the normal state resistivities along two perpendicular paths differ by a factor of 13.5. Transversal thermoelectric effects were investigated by measuring thermovoltages transverse to temperature gradients parallel to the surface normal induced by pulsed laser irradiation. At room tem…

DiffractionMaterials scienceCondensed matter physicsEnergy Engineering and Power TechnologyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsTransverse planeNuclear magnetic resonanceSputteringThermoelectric effectPerpendicularElectrical and Electronic EngineeringThin filmAnisotropyVicinalPhysica C: Superconductivity
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Optimization of ZnO:Al/Ag/ZnO:Al structures for ultra-thin high-performance transparent conductive electrodes

2012

Al-doped ZnO (AZO)/Ag/AZO multilayer coatings (50-70 nm thick) were grown at room temperature on glass substrates with different silver layer thickness, from 3 to 19 nm, by using radio frequency magnetron sputtering. Thermal stability of the compositional, optical and electrical properties of the AZO/Ag/AZO structures were investigated up to 400 °C and as a function of Ag film thickness. An AZO film as thin as 20 nm is an excellent barrier to Ag diffusion. The inclusion of 9.5 nm thin silver layer within the transparent conductive oxide (TCO) material leads to a maximum enhancement of the electro-optical characteristics. The excellent measured properties of low resistance, high transmittanc…

High transmittanceDiffusionrf-Magnetron sputteringElectro-optical characteristicGlass substrateTransparent conductive oxide RF magnetron sputtering Optical properties Electrical resistivity Al-doped zinc oxide Silver MultilayersSettore ING-INF/01 - ElettronicaSUBSTRATE-TEMPERATUREAg diffusionAl-doped ZnOLow resistanceMultilayerZNOMaterials ChemistryVisible spectral rangeMULTILAYER FILMSAl-doped zinc oxideOptical propertiesMetals and AlloysAZO filmElectrical resistivityOPTICAL-PROPERTIESOXIDE-FILMSSurfaces and InterfacesZinc oxide AluminumRadio frequency magnetron sputteringSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsOptical and electrical propertieElectrodeOptoelectronicsFilm preparationLayer (electronics)Magnetron sputteringUltra-thinRF magnetron sputteringMaterials scienceSilverThermodynamic stabilityOpticsTransparent conductive oxideElectrical resistivity and conductivityThermal stabilityElectrical conductorTransparent conducting filmRoom temperatureThin film solar cellbusiness.industryTransparent conductiveOptical propertieSilver layerHigh transmittanceMultilayersMulti-layer-coatingZnO Electric conductivityMeasured propertiebusinessSubstrate
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Polymer/metal hybrid multilayers modified Schottky devices

2013

Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1-5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers …

Ideality factorMaterials sciencePhysics and Astronomy (miscellaneous)Layered systemNanoparticleSilicon GoldNanotechnologySingle-crystal substrates DepositionSubstrate (electronics)Poly-3-hexylthiopheneSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaNanoparticleSputteringPolymer; Au nanoparticles; Schottky devicePolymerHybrid multilayerConductive polymerSpin coatingbusiness.industryBarrier heightSchottky diodeSputter depositionCurrent-voltage measurementSemiconducting siliconSchottky deviceOptoelectronicsSelf-assemblybusinessAu nanoparticles
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Strain induced renormalization of transport properties in UPt3 thin films

1996

The growth of sputter deposited UPt3 thin films on Al2O3 (1012), LaAlO3 (111) and SrTiO3 (111) was investigated. We found strongly 0001-textured growth of UPt3 in a small compositional range of 23–25% uranium content. For Al2O3-and LaAlO3-substrates no in-plane order could be observed whereas epitaxial growth was initiated on SrTiO3 (111): The growth can be identified as Vollmer-Weber like resulting in the formation of large lateral strain as a consequence of the growth mode and a lattice misfit of −4.3% between UPt3 (0001) and SrTiO3 (111). Strong deviations from the typical heavy-fermion characteristics in electronic transport properties like resistivity, magnetoresitivity and Hall-effect…

Lateral strainMaterials scienceCondensed matter physicsGeneral Physics and Astronomychemistry.chemical_elementUraniumEpitaxyRenormalizationchemistryElectrical resistivity and conductivitySputteringLattice (order)ddc:530Thin filmCzechoslovak Journal of Physics
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Growth and characterization of ZnO1−xSx highly mismatched alloys over the entire composition

2015

Alloys from ZnO and ZnS have been synthesized by radio-frequency magnetron sputtering over the entire alloying range. The ZnO1−xSx films are crystalline for all compositions. The optical absorption edge of these alloys decreases rapidly with small amount of added sulfur (x ∼ 0.02) and continues to red shift to a minimum of 2.6 eV at x = 0.45. At higher sulfur concentrations (x > 0.45), the absorption edge shows a continuous blue shift. The strong reduction in the band gap for O-rich alloys is the result of the upward shift of the valence-band edge with x as observed by x-ray photoelectron spectroscopy. As a result, the room temperature bandgap of ZnO1−xSx alloys can be tuned from 3.7 eV to …

Materials scienceAbsorption edgeX-ray photoelectron spectroscopySputteringBand gapAnalytical chemistryWide-bandgap semiconductorGeneral Physics and AstronomyHeterojunctionSputter depositionAtomic physicsThin filmJournal of Applied Physics
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The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films

2021

The experiment at HASYLAB/DESY was performed within the project I-20180036 EC. The research leading to this result has been supported by the project CALIPSOplus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. Filipe Correia is grateful to the Fundação para a Ciência e Tecnologia (FCT, Portugal) for the Ph.D. Grant SFRH/BD/111720/2015. Joana Ribeiro is grateful to the Project WinPSC - POCI-01-0247-FEDER-017796, for the research grant from the Agência Nacional de Inovação, co-funded by the European Regional Development Fund (ERDF), through the Operational Programme for Competitiveness and Internationalisation (COMPETE 2020), under the…

Materials scienceAbsorption spectroscopyCiências Naturais::Ciências FísicasThin films:Ciências Físicas [Ciências Naturais]:Chemical engineering [Engineering and technology]02 engineering and technology010402 general chemistry01 natural sciencessymbols.namesakeX-ray photoelectron spectroscopy:Engenharia química [Ciências da engenharia e tecnologias]Zinc oxide:NATURAL SCIENCES:Physics [Research Subject Categories]Materials ChemistryThin filmChemistry Chemical engineeringWurtzite crystal structureX-ray absorption spectroscopyScience & TechnologyMechanical EngineeringThermoelectricMetals and AlloysSputteringX-ray absorption spectroscopySputter deposition021001 nanoscience & nanotechnologyQuímica Engenharia química0104 chemical sciencesCrystallography13. Climate actionMechanics of Materialsddc:540Raman spectroscopysymbolsGrain boundary0210 nano-technologyRaman spectroscopy
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Influence of Nb-doping on the local structure and thermoelectric properties of transparent TiO2:Nb thin films

2020

The experiment at HASYLAB/DESY was performed within the project I-20180036 EC. The research leading to this result has been supported by the project CALIPSOplus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. Filipe Correia is grateful to the Fundação para a Ciência e Tecnologia (FCT, Portugal) for the Ph.D. Grant SFRH/BD/111720/2015 . Joana Ribeiro is grateful to the Project WinPSC - POCI-01-0247-FEDER-017796, for the research grant, co-funded by the European Regional Development Fund (ERDF) , through the Operational Programme for Competitiveness and Internationalisation (COMPETE 2020), under the PORTUGAL 2020 Partnership Agreement…

Materials scienceAbsorption spectroscopyCiências Naturais::Ciências FísicasThin films:Ciências Físicas [Ciências Naturais]Analytical chemistry02 engineering and technologyNb [TiO2]010402 general chemistry01 natural sciencesSputteringSeebeck coefficientThermoelectric effect:NATURAL SCIENCES:Physics [Research Subject Categories]Materials ChemistryThin filmNb 2 [TiO]Science & TechnologyDopantExtended X-ray absorption fine structureThermoelectricMechanical EngineeringMetals and AlloysSputtering540021001 nanoscience & nanotechnologyXANESXANES0104 chemical sciencesTiO :Nb 2EXAFSMechanics of Materialsddc:540TiO2:NbSeebeck0210 nano-technologyJournal of Alloys and Compounds
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Epitaxial Mn2Au thin films for antiferromagnetic spintronics

2015

Mn2Au is one of the few candidate materials for antiferromagnetic spintronics requiring ordered metals with a high Neel-temperature and strong spin–orbit coupling. We report the preparation of epitaxial Mn2Au thin films by rf-sputtering. Structural characterization by x-ray and electron diffraction demonstrates a high degree of atomic order and the temperature dependence of the resistivity is typical for a good metal. The magnetic properties of the samples are studied by the investigation of Mn2Au/Fe bilayers. Exchange bias effects are observed, which present strong evidence for antiferromagnetic order in the Mn2Au thin films. Small domains of 500 nm are visualized in the exchange coupled F…

Materials scienceAcoustics and UltrasonicsCondensed matter physicsSpintronicsMagnetismCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceExchange biasElectron diffractionSputteringElectrical resistivity and conductivityAntiferromagnetismCondensed Matter::Strongly Correlated ElectronsThin filmJournal of Physics D: Applied Physics
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XRD and micro Raman characterization of epitaxial Bi-2201, Bi-2212 and Bi-2223 thin films

1997

Copyright (c) 1997 Elsevier Science B.V. All rights reserved. Micro Raman characterization is performed on high quality thin films of Bi 2 Sr 2 CuO 6+x (2201), Bi 2 Sr 2 CaCu 2 O 8+x (2212), Bi 2 Sr 2 Ca 2 Cu 3 O 10+x (2223) made by dc-sputtering. Single crystal X-ray measurements reveal the full epitaxy of the films, which allows for polarized Raman spectra to be obtained.

Materials scienceAnalytical chemistryEnergy Engineering and Power TechnologyLattice vibrationCondensed Matter PhysicsEpitaxyElectronic Optical and Magnetic MaterialsCharacterization (materials science)symbols.namesakeMicro ramansymbolsCathode sputteringElectrical and Electronic EngineeringThin filmRaman spectroscopySingle crystalPhysica C: Superconductivity
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Structural, electrical and optical properties of zinc‐iridium oxide thin films deposited by DC reactive magnetron sputtering

2014

ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room tem-perature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentra-tion in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.

Materials scienceAnalytical chemistrychemistry.chemical_elementCondensed Matter PhysicsAmorphous solidsymbols.namesakechemistrySputteringElectrical resistivity and conductivitysymbolsTransmittanceIridiumThin filmRaman spectroscopyWurtzite crystal structurephysica status solidi c
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