Search results for "Toe"

showing 10 items of 3824 documents

Photoluminescence of Carbon Dots Embedded in a SiO2 Matrix

2016

Abstract We synthetized carbon dots by a pyrolitic method, and studied their photoluminescence in aqueous environment and upon trapping in a solid matrix. To this aim, we devised a facile procedure allowing to embed the dots in amorphous SiO2, without the need of any pre-functionalization of the nanoparticles, and capable of yielding a brightly photoluminescent monolith. Experimental data reveal a remarkable similarity between the emission properties of carbon dots in water and in SiO2, suggesting that the chromophores responsible of the photoluminescence undergo only weak interactions with the environment. Time-resolved photoluminescence data reveal that the typical photoluminescence tunab…

PhotoluminescenceMaterials sciencePhotoluminescent nanocarbonAnalytical chemistryNanoparticlechemistry.chemical_element02 engineering and technologyTrapping010402 general chemistry01 natural sciencesCarbon dots; Photoluminescent nanocarbons; Photoluminescent silica monolith; Time-resolved photoluminescence; Materials Science (all)Photoluminescence excitationMonolithgeographygeography.geographical_feature_categorybusiness.industryChromophore021001 nanoscience & nanotechnologyCarbon dot0104 chemical sciencesAmorphous solidchemistryOptoelectronicsPhotoluminescent silica monolithMaterials Science (all)0210 nano-technologybusinessCarbonTime-resolved photoluminescence
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Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

2007

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at similar to 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm(2). The lasing emission linewidth is down to 0.033 nm.

PhotoluminescenceMaterials sciencePhysics and Astronomy (miscellaneous)business.industryBOXESSettore ING-INF/01 - ElettronicaSemiconductor laser theoryGANOptical pumpingMICROCAVITIESLaser linewidthOpticsLASERSSemiconductors Laser physics Photoluminescence spectroscopy Oscillator strengths Quantum wells Optical absorption Whispering gallery wave Nitrides Etching Electrical properties and parametersOptoelectronicsStimulated emissionWhispering-gallery waveGAAS MICRODISKSbusinessLasing thresholdQuantum well
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Photoelectrochemical Bisphenol S Sensor Based on ZnO‐Nanoroads Modified by Molecularly Imprinted Polypyrrole

2019

Molecularly imprinted polymers are important tools for the design of sensors and other molecular recognition based analytical systems. In this paper the development of a photoelectrochemical sensor for selective bisphenol determination is reported. The sensor is based on a glass/ZnO/MIP‐Ppy structure consisting of glass modified by a ZnO layer (glass/ZnO), which is functionalized by molecularly imprinted conducting polymer polypyrrole (MIP‐Ppy). The sensitivity of the sensor to bisphenol is in the range of 0.7–12.5 µm. Selectivity tests to other bisphenolic compounds are performed. Some aspects of a photoinduced response mechanism in glass/ZnO/MIP‐Ppy nanostructures are predicte…

PhotoluminescenceMaterials sciencePolymers and PlasticsBisphenol02 engineering and technology010402 general chemistryPolypyrrole01 natural sciencesphotoelectrochemical sensorschemistry.chemical_compoundbisphenolPolymer chemistryMaterials ChemistryPhysical and Theoretical ChemistryOrganic ChemistryMolecularly imprinted polymerphotoinduced021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesBisphenol SchemistryChemical engineeringmolecularly imprinted polymersphotoluminescence0210 nano-technologyMacromolecular Chemistry and Physics
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Engineering light emission of two-dimensional materials in both the weak and strong coupling regimes

2017

Abstract Two-dimensional (2D) materials have promising applications in optoelectronics, photonics, and quantum technologies. However, their intrinsically low light absorption limits their performance, and potential devices must be accurately engineered for optimal operation. Here, we apply a transfer matrix-based source-term method to optimize light absorption and emission in 2D materials and related devices in weak and strong coupling regimes. The implemented analytical model accurately accounts for experimental results reported for representative 2D materials such as graphene and MoS2. The model has been extended to propose structures to optimize light emission by exciton recombination in…

PhotoluminescenceMaterials scienceQC1-999Physics::Optics02 engineering and technology010402 general chemistry01 natural scienceslaw.inventionNanomaterialsmos2lawstrong couplingsingle-photon emitterElectrical and Electronic Engineeringwse2business.industryGraphenePhysicsoptical emission enhancementgraphene021001 nanoscience & nanotechnologyfew layer materialsAtomic and Molecular Physics and Opticshbn0104 chemical sciencesElectronic Optical and Magnetic MaterialsStrong couplingcavity polaritonsOptoelectronicsLight emissionphotoluminescence0210 nano-technologybusinessBiotechnologyNanophotonics
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Potential and limitations of CsBi3I10 as a photovoltaic material

2020

Herein we demonstrate the dry synthesis of CsBi3I10 both as a free-standing material and in the form of homogeneous thin films, deposited by thermal vacuum deposition. Chemical and optical characterization shows high thermal stability, phase purity, and photoluminescence centered at 700 nm, corresponding to a bandgap of 1.77 eV. These characteristics make CsBi3I10 a promising low-toxicity material for wide bandgap photovoltaics. Nevertheless, the performance of this material as a semiconductor in solar cells remains rather limited, which can be at least partially ascribed to a low charge carrier mobility, as determined from pulsed-radiolysis time-resolved microwave conductivity. Further dev…

PhotoluminescenceMaterials scienceRenewable Energy Sustainability and the Environmentbusiness.industryBand gapDoping02 engineering and technologyGeneral Chemistry010402 general chemistry021001 nanoscience & nanotechnology7. Clean energy01 natural sciences0104 chemical sciencesSemiconductorVacuum depositionPhotovoltaicsOptoelectronicsGeneral Materials ScienceThermal stabilityThin film0210 nano-technologybusinessMaterials
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Hole transporting materials based on benzodithiophene and dithienopyrrole cores for efficient perovskite solar cells

2018

The development of highly efficient hole transporting materials (HTMs) for perovskite solar cells (PSCs) is still one of the most thrilling research subjects in the development of this emerging photovoltaic technology. Inner ring engineering of the aromatic core of new HTMs – consisting of three fused rings endowed with four triarylamine units – reveals major performance effects over the fabricated devices. In particular, substitution of the central pyrrole ring in dithienopyrrole (DTP) by a benzene ring – benzodithiophene (BDT) – allows enhancing the power conversion efficiency from 15.6% to 18.1%, in devices employing mixed-perovskite (FAPbI3)0.85(MAPbBr3)0.15 (MA: CH3NH3+, FA: NHCHNH3+) …

PhotoluminescenceMaterials scienceRenewable Energy Sustainability and the Environmentbusiness.industryPhotovoltaic systemEnergy conversion efficiency02 engineering and technologyGeneral ChemistryConductivity010402 general chemistry021001 nanoscience & nanotechnologyRing (chemistry)01 natural sciences7. Clean energy0104 chemical sciencesActive layerOptoelectronicsGeneral Materials ScienceDensity functional theory0210 nano-technologybusinessPerovskite (structure)
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Intra-center and recombination luminescence of bismuth defects in fused and unfused amorphous silica fabricated by SPCVD

2013

Abstract Photoluminescence (PL) of bismuth doped silicon dioxide excited by UV excimer lasers (ArF — 193 nm, KrF — 248 nm) and a green light laser diode (532 nm) is studied in a wide spectral band at temperatures ranging from 12 to 750 K. Two types of samples are investigated: unfused, 100 μm in thickness amorphous layer immediately deposited on the inner surface of silica substrate tube, and the same material after profusion resulted from tube collapsing to a rod by external heating. PL bands centered at 620–650 nm, 820 nm and 1400 nm wavelengths are observed in both fused and unfused samples. Under excitation by the green laser diode decay time constants for 650 nm (orange) and 1400 nm (N…

PhotoluminescenceMaterials scienceSiliconLaser diodeSilicon dioxidebusiness.industryDopingAnalytical chemistrychemistry.chemical_elementCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsBismuthlaw.inventionchemistry.chemical_compoundchemistrylawExcited stateMaterials ChemistryCeramics and CompositesOptoelectronicsLuminescencebusinessJournal of Non-Crystalline Solids
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Physical properties and applications of InxGa1−xN nanowires

2014

We have successfully grown InxGa1−xN nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. InxGa1−xN is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowi…

PhotoluminescenceMaterials scienceSiliconbusiness.industryAnalytical chemistryNanowireNanoprobechemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencessymbols.namesakechemistry0103 physical sciencessymbolsOptoelectronics010306 general physics0210 nano-technologybusinessRaman spectroscopySpectroscopyRaman scatteringMolecular beam epitaxyAIP Conference Proceedings
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Cathodo- and Photo- Luminescence of Silicon Rich Oxide Films Obtained by LPCVD

2012

Silicon technology dominates the electronics industry today, so it is highly desirable the development of silicon-based components compatible with silicon technology, allowing integration of electrical and optical components on a single chip. One promising approach to the development of a silicon based light emitter is Silicon Rich Oxide (SRO), also called offstoichiometric silicon oxide. The interest on the optical properties of this material has grown since it was demonstrated that SRO films subjected to high-temperature annealing exhibit efficient photoluminescence (PL) (Iacona et al., 2000; Shimizu-Iwayama et al., 1996).

PhotoluminescenceMaterials scienceSiliconbusiness.industryAnnealing (metallurgy)Oxidechemistry.chemical_elementChemical vapor depositionPhotochemistrychemistry.chemical_compoundchemistryOptoelectronicsElectronicsbusinessSilicon oxideLuminescence
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Efficient excitation of photoluminescence in a two-dimensional waveguide consisting of a quantum dot-polymer sandwich-type structure

2014

International audience; In this Letter, we study a new kind of organic polymer waveguide numerically and experimentally by combining an ultrathin (10–50 nm) layer of compactly packed CdSe/ZnS core/shell colloidal quantum dots (QDs) sandwiched between two cladding poly(methyl methacrylate) (PMMA) layers. When a pumping laser beam is coupled into the waveguide edge, light is mostly confined around the QD layer, improving the efficiency of excitation. Moreover, the absence of losses in the claddings allows the propagation of the pumping laser beam along the entire waveguide length; hence, a high-intensity photoluminescence (PL) is produced. Furthermore, a novel fabrication technology is develo…

PhotoluminescenceMaterials sciencebusiness.industry02 engineering and technology021001 nanoscience & nanotechnologyCladding (fiber optics)Atomic and Molecular Physics and Opticslaw.inventionNanomaterials[SPI.MAT]Engineering Sciences [physics]/Materials020210 optoelectronics & photonicsOpticslawQuantum dot0202 electrical engineering electronic engineering information engineering[SPI.OPTI]Engineering Sciences [physics]/Optics / PhotonicOptoelectronicsPhotolithography0210 nano-technologybusinessWaveguideRefractive indexExcitation
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