Search results for "Toe"

showing 10 items of 3824 documents

Asymptotic properties of incoherent waves propagating in an all-optical regenerators line

2007

International audience; We present an original method to generate optical pulse trains with random time-interval values from incoherent broadband sources. More precisely, our technique relies on the remarkable properties of a line made of cascaded self-phase modulation-based optical regenerators. Depending on the regenerator parameters, various regimes with noticeably different physical behaviors can be reported.

Signal processingNonlinear opticsOptical fiber070.4340 190.3100 190.5530 320.7140Optical communication02 engineering and technology01 natural scienceslaw.invention010309 opticsFour-wave mixing020210 optoelectronics & photonicsOpticslaw0103 physical sciencesDispersion (optics)Optical solitons0202 electrical engineering electronic engineering information engineeringOptical communicationOptical fibersUltrafast processSelf-phase modulationPhysicsOptical amplifier[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics][ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics]business.industrySignal regenerationAtomic and Molecular Physics and OpticsModulationPulse propagationNonlinear dynamical systemsbusinessSignal regenerationOptics Letters
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Nonlinear morphological correlation: optoelectronic implementation

2008

An optoelectronic implementation of the nonlinear morphological correlation by use of a threshold-decomposition technique and a joint transform correlator architecture is presented. This nonlinear morphological correlation provides improved image detection compared with standard linear optical pattern-recognition correlation methods. It also offers a more robust detection of low-intensity images in the presence of high-intensity patterns to be rejected.

Signal processingbusiness.industryComputer scienceMachine visionMaterials Science (miscellaneous)Morphological correlationIndustrial and Manufacturing EngineeringNonlinear systemOpticsPattern recognition (psychology)OptoelectronicsBusiness and International ManagementbusinessLinear filterApplied Optics
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Boron doping of silicon rich carbides: Electrical properties

2013

Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarka…

Silicon nanodotMaterials scienceSiliconSilicon dioxideBoron dopingInorganic chemistrychemistry.chemical_elementSilicon carbide02 engineering and technologySettore ING-INF/01 - Elettronica7. Clean energy01 natural sciencesSettore FIS/03 - Fisica Della MateriaCarbidechemistry.chemical_compoundUV-vis reflection and transmittanceMultilayer0103 physical sciencesSilicon carbideGeneral Materials ScienceElectrical measurementsSilicon rich carbide010302 applied physicsDopantbusiness.industryMechanical EngineeringDopingFourier transform infrared spectroscopySilica021001 nanoscience & nanotechnologyCondensed Matter PhysicsSilicon richOptical propertieElectrical transportchemistryMechanics of MaterialsUV-vis reflection and transmittance Doping (additives)Boron-dopingOptoelectronicsElectric propertieNanodot0210 nano-technologybusinessX ray diffraction Boron carbideMaterials Science and Engineering: B
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Sputtered SiOxNy thin films: improving optical efficiency of liquid crystal diffuser elements in multi-focal near-to-eye display architecture

2021

In this work we present reactive sputtered SiOxNy films with a variable refractive index as a convienent solution for contrast improvement of liquid crystal diffuser multi stacks in near-to-eye AR/VR displays. The focus concerns minimization of light reflections between internal structures, in particular ITO, by optimizing internal layers through tailored properties of thin film coatings, as well as subsequent laser patterning of thin film stack. Inorganic thin films have been deposited on glass by physical vapor deposition. Corresponding refractive index, thickness, uniformity and dielectric characteristics and other electro-optical properties have been measured and their impact on the res…

Silicon oxynitrideMaterials sciencebusiness.industryDielectricchemistry.chemical_compoundchemistryStack (abstract data type)Liquid crystalPhysical vapor depositionOptoelectronicsThin filmbusinessDiffuser (optics)Refractive indexAdvances in Optical Thin Films VII
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Polarization Insensitive Wavelength Conversion in a Low-Birefringence SiGe Waveguide

2016

We report the first demonstration of a single-pass dual-orthogonal-pump four-wave mixing-based wavelength conversion scheme in a silicon-based waveguide. The silicon germanium waveguide used was designed to exhibit strong TE/TM mode similarity across a broad wavelength range as well as a large nonlinear coefficient. A polarization-dependent loss of just 0.42 dB was measured, and the conversion of 40-Gb/s differential phase-shift keying signals was demonstrated with 1.5-dB power penalty at a bit error ratio of $10^{-9}$ .

Silicon photonicsMaterials scienceBirefringenceSiliconbusiness.industryPhysics::Opticschemistry.chemical_elementOptical polarization02 engineering and technologyPolarization (waves)Waveguide (optics)Atomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsSilicon-germaniumchemistry.chemical_compound020210 optoelectronics & photonicsZero-dispersion wavelengthOpticschemistry0202 electrical engineering electronic engineering information engineeringOptoelectronicsElectrical and Electronic EngineeringbusinessIEEE Photonics Technology Letters
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New Molecular-Based Materials for Enabling Electro-Optical Bistability in the Silicon Photonics Platform

2019

Electro-optical bistability is a functionality which can be crucial for a wide range of applications as it can enable non-volatile and ultra-low power switching performance. We investigate the integration of a molecular-based material presenting a Spin Crossover (SCO) effect in the silicon platform for enabling optical bistability. The SCO phenomenon involves a switching process between two molecular spin states. This spin transition comes along with a change in the optical refractive index that can be switched by different external stimuli such as a variation of temperature or light irradiation and which has a hysteretic behaviour. The SCO material can be synthetized as nanoparticles so th…

Silicon photonicsMaterials scienceBistabilitySiliconbusiness.industrySpin transitionchemistry.chemical_element02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesOptical switch0104 chemical sciencesOptical bistabilitychemistrySpin crossoverOptoelectronicsPhotonics0210 nano-technologybusinessComputer Science::Databases2019 21st International Conference on Transparent Optical Networks (ICTON)
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Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

2013

We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.

Silicon photonicsMaterials scienceSiliconPhysics::Instrumentation and Detectorsbusiness.industryHybrid silicon laserchemistry.chemical_elementSettore ING-INF/02 - Campi ElettromagneticiOptical powerSubstrate (electronics)Settore ING-INF/01 - ElettronicaElectronic Optical and Magnetic MaterialsResponsivityOpticsSilicon photomultiplierchemistryOptoelectronicsContinuous waveAvalanche photodiode (APD) photodetector responsivity silicon photomultiplier (SiPM) single-photon avalanche diode (SPAD)Electrical and Electronic EngineeringbusinessIEEE Transactions on Electron Devices
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The spatial distribution of non-linear effects in multi-photon photoemission from metallic adsorbates on Si(1 1 1)

2001

Multi-photon excitations from thin metallic films on silicon substrates have been observed utilising photoemission electron microscopy. The photoelectrons have been excited by means of high power femtosecond laser pulses with a photon energy below the work function threshold. The strong spatial variations of the non-linear effects became directly visible in electron emission from the adsorbed thin films. Centres of enhanced photoelectron yield, so-called hot spots, were observed on the surfaces of various samples. The multi-photon electron yield of the metallic films (permalloy and lead) depends strongly on the sample topography and the photon polarisation.

SiliconChemistryAnalytical chemistryPhysics::Opticschemistry.chemical_elementSurfaces and InterfacesElectronPhoton energyPhotoelectric effectCondensed Matter PhysicsMolecular physicsSurfaces Coatings and FilmsCondensed Matter::Materials SciencePhotoemission electron microscopyFemtosecondMaterials ChemistryWork functionThin filmSurface Science
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Thermostimulated luminescence and electron spin resonance in X-ray- and photon-irradiated oxygen-deficient silica

2007

Abstract Influences of oxygen-deficiency on radiation properties of high-purity, low-OH fused silica were studied. It is found that thermostimulated luminescence (TSL) peaks are different for photo (7.7 eV) and X-ray excitation at 77 K. X-ray excitation produces TSL peaks at 125 and 170 K corresponding to the anneal temperatures of two types of self-trapped holes centers STH2 and STH1, respectively, detected by electron spin resonance (ESR). Oxygen-deficiency apparently increases the number of electron traps, stabilizing a larger number of STHs in the continuous defect-free silica network than is observed in similarly X-irradiated stoichiometric silica glasses. Photoexcitation of oxygen-def…

SiliconChemistryAnalytical chemistrychemistry.chemical_elementElectronCondensed Matter PhysicsThermoluminescenceElectronic Optical and Magnetic Materialslaw.inventionPhotoexcitationParamagnetismlawMaterials ChemistryCeramics and CompositesIrradiationLuminescenceElectron paramagnetic resonanceJournal of Non-Crystalline Solids
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Investigation of optical and radiation properties of oxygen deficient silica glasses

1999

The deficiency of oxygen in pure silica manifests an absorption band at 5 eV as well as an absorption band of higher intensity at 7.6 eV. The band at 5 eV is associated with lone twofold-coordinated silicon centers. The nature of the main band at 7.6 eV has been studied using silica samples with different levels of oxygen deficiency. The excitation via the 7.6 eV band produces a photoelectric response as well as inner center and recombination type luminescence. Two main luminescence bands of the twofold-coordinated silicon center appear: a blue band (2.7 eV) and a UV band (4.4 eV). Induced absorption with several bands as well as thermally stimulated luminescence with complex peak structure…

SiliconChemistryAnalytical chemistrychemistry.chemical_elementPhotoelectric effectCondensed Matter PhysicsOxygenElectronic Optical and Magnetic MaterialsAbsorption bandMaterials ChemistryCeramics and CompositesAtomic physicsAbsorption (electromagnetic radiation)LuminescenceExcitationRecombinationJournal of Non-Crystalline Solids
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