Search results for "Transistor"
showing 10 items of 234 documents
Observation of thermally excited charge transport modes in a superconducting single-electron transistor
1997
Experiments on a superconducting single-electron transistor are reported. A new structure in the current-voltage characteristics at subgap voltages was observed when temperature was not too low as compared to the superconducting transition temperature Tc of the sample. The strength of the anomalies increases exponentially with temperature. The dominating features arise from matching of singularities in the density of states on two sides of a tunnel junction, and from the Josephson-quasiparticle cycle. Thermal excitations are essential for the former process, and they also make the latter process possible at low voltages.
Characterisation of Cooper Pair Boxes for Quantum Bits
2001
We have fabricated and measured single Cooper pair boxes (SCB) using superconducting single electron transistors (SET) as electrometers. The box storage performance for Cooper pairs was measured by observing the changes in the SCB island potential. We are also fabricating niobium structures, which are expected to have less problems with quasiparticle contamination than similar aluminium based devices because of the high critical temperature. The use of niobium may also reduce decoherence and thereby increase the time available for quantum logic operations.
Design of an integrated low-noise, low-power charge sensitive preamplifier for γ and particle spectroscopy with solid state detectors
2014
The design of an integrated charge-sensitive preamplifier suitable for γ-ray spectroscopy is presented. It is fully integrated, except for the feedback resistor, and can drive directly a 50Ω cable with its low impedance output stage. It is designed in AMS 0.35µm technology and its small dimensions and low power consumption (10 mW) are optimized for multi-channel applications. It works both with germanium and silicon detectors for a large range of values of electrode and feedback capacitances. Its wide bandwidth ensures a risetime of 10 ns or less in most configurations. This characteristic makes the preamplifier suitable not only for high resolution spectroscopy but also for pulse-shape ana…
Dynamic $\mathrm{R}_{\mathrm{ON}}$ evaluation of commercial GaN HEMT under different switching and radiation conditions
2019
This paper focus on the study of dynamic resistance $(\mathrm{R}_{\mathrm{dyn}})$ over commercial Gallium Nitride High Electromobility Transistors (GaN HEMTs) devices. The first part shows a study of the main mechanism causing $\mathrm{R}_{\mathrm{dyn}}$ , showing that depending on the structure, stress time, voltage applied and switching conditions, the $\mathrm{R}_{\mathrm{dyn}}$ can suffer a relevant increase. Also, it is demonstrated how the use of soft-switching conditions can alleviate trapping effects. Finally, due to the interest over these devices for future space applications, the effects of gamma radiation over the $\mathrm{R}_{\mathrm{dyn}}$ has been studied.
The optical blocking filter for the ATHENA wide field imager: Ongoing activities towards the conceptual design
2015
ATHENA is the L2 mission selected by ESA to pursue the science theme "Hot and Energetic Universe" (launch scheduled in 2028). One of the key instruments of ATHENA is the Wide Field Imager (WFI) which will provide imaging in the 0.1-15 keV band over a 40'x40' large field of view, together with spectrally and time-resolved photon counting. The WFI camera, based on arrays of DEPFET active pixel sensors, is also sensitive to UV/Vis photons. Optically generated electron-hole pairs may degrade the spectral resolution as well as change the energy scale by introducing a signal offset. For this reason, the use of an X-ray transparent optical blocking filter is needed to allow the observation of all …
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…
Minimum power-delay product design of MCML gates
2008
This paper describes a methodology for the minimization of the power-delay product of MCML gates. The method is based on the novel concept of crossing point capacitance. The methodology was been validated by designing several gates using in an IBM 130 nm CMOS process.
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
2019
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.
Electrical transduction in phthalocyanine-based gas sensors: from classical chemiresistors to new functional structures
2009
Phthalocyanines are organic-based materials which have attracted a lot of research in recent times. In the field of sensors, they present interesting and valuable potentialities as sensing elements for real gas sensor applications. In the present article, and taking some of our experiments as representative examples, we review the different ways of transduction applied to such applications. Some of the new tendencies and transducers for gas sensing based on phthalocyanine derivatives are also reported. Among them, electrical transduction (resistors, field-effect transistors, diodes, etc.) has been, historically, the most commonly exploited way for the detection and/or quantification of gas…
A Design Methodology for Low-Power MCML Ring Oscillators
2007
In this paper, a low-power design method for MCML based ring oscillators is presented. The proposed method takes into account the parasitic capacitances of the MOS transistors. To validate it, some ring oscillators with different oscillation frequencies were designed in a 0.18 mum CMOS technology. SPICE simulations demonstrate the effectiveness of the design method.