Search results for "Transistor"
showing 10 items of 234 documents
A novel noise figure and gain test set for microwave devices
2002
A new instrument for the measurement of noise and gain of microwave devices is presented. It differs from the commercial ones in the accomplishment of the gain measurement and is also useful for measuring mismatched devices such as transistors, The instrument is driven via HP-IB by a PC and a user-friendly virtual panel is designed to perform all the required operations. Also included is the possibility of removing the second-stage noise contribution and correcting various sources of error (source ENR variations, temperature variations, etc.). The test set provides a very good accuracy for both matched and mismatched devices, usually limited by source ENR accuracy and step attenuator repeat…
Selective chromo-fluorogenic detection of DFP (a Sarin and Soman mimic) and DCNP (a Tabun mimic) with a unique probe based on a boron dipyrromethene …
2014
[EN] A novel colorimetric probe (P4) for the selective differential detection of DFP (a Sarin and Soman mimic) and DCNP (a Tabun mimic) was prepared. Probe P4 contains three reactive sites; i.e. (i) a nucleophilic phenol group able to undergo phosphorylation with nerve gases, (ii) a carbonyl group as a reactive site for cyanide; and (iii) a triisopropylsilyl (TIPS) protecting group that is known to react with fluoride. The reaction of P4 with DCNP in acetonitrile resulted in both the phosphorylation of the phenoxy group and the release of cyanide, which was able to react with the carbonyl group of P4 to produce a colour modulation from pink to orange. In contrast, phosphorylation of P4 with…
A delay time bound for distributed parameter circuits with bipolar transistors
1990
We prove here a stability theorem concerning a parabolic system of equations with non-linear boundary conditions that governs the behaviour of a class of networks in which the bipolar transistors operating under large-signal conditions are interconnected with reg-lines modelled by telegraph equations
Individual Variability and Average Reliability in Parallel Networks of Heterogeneous Biological and Artificial Nanostructures
2013
We simulate the collective electrical response of heterogeneous ensembles of biological and artificial nanostructures whose individual threshold potentials show a significant variability. This problem is of current interest because nanotechnology is bound to produce nanostructures with a significant experimental variability in their individual physical properties. This diversity is also present in biological systems that are however able to process information efficiently. The nanostructures considered are the ion channels of biological membranes, nanowire field-effect transistors, and metallic nanoparticle-based single electron transistors. These systems are simulated with canonical models…
Thickness scaling of space-charge-limited currents in organic layers with field- or density-dependent mobility
2006
An exact solution is provided for the current density-voltage (J –V) characteristics of space-charge limited transport of a single carrier in organic layers with field-dependent mobility of the type μ (E) = μ0 exp (γ √E. The general scaling relationship for field-dependent mobility occurs in terms of the variables JL and V /L. For the density-dependence of the mobility found in organic field-effect transistor measurements, the thickness scaling occurs in terms of different variables, J1/βL and V /L. The proposed scaling is a useful test for distinguishing field- and carrier density-dependent mobility in disordered organic semiconductors. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Influence of device geometry on sensor characteristics of planar organic electrochemical transistors.
2009
The response of PEDOT:PSS planar electrochemical transistors to H2O2 can be tuned by varying the ratio between the areas of the channel and the gate electrode. Devices with small gates show lower background signal and higher sensitivity. The detection range, on the other hand, is found to be rather independent of the gate/channel area ratio.
Tailored conjugated polymer Langmuir-Schafer thin films in sensing transistors
2004
Organic Thin Film Transistors (OTFTs) have been fabricated, in a standard bottom gate configuration, with Langmuir-Schäfer (LS) or cast thin films of regioregular poly[1,4-(2,5-dioctyloxyphenylene)-2,5-thiophene], synthesized via an organometallic protocol, as active layers. The transistors electrical characterization has evidenced that LS based devices exhibit better performance level than cast film ones. Appealing perspectives for newly substituted conjugated polymers in OTFT sensing devices are discussed.
A DC and small signal AC model for organic thin film transistors including contact effects and non quasi static regime
2017
Abstract We present a compact model for the DC and small signal AC analysis of Organic Thin Film Transistors (OTFTs). The DC part of the model assumes that the electrical current injected in the OTFT is limited by the presence of a metal/organic semiconductor junction that, at source, acts as a reverse biased Schottky junction. By including this junction, modeled as a reverse biased gated diode at source, the DC model is able to reproduce the scaling of the electrical characteristics even for short channel devices. The small signal AC part of the model uses a transmission line approach in order to compute the impedances of the channel and parasitic regions of the device. The overlap capacit…
Role of photoactive layer morphology in high fill factor all-polymer bulk heterojunction solar cells
2011
We report on the realization of all-polymer solar cells based on blends of poly(3-hexylthiophene-2,5-diyl) (P3HT) as a donor and poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) as an acceptor. High fill factors are demonstrated for the first time in this class of devices suggesting high dissociation efficiency for the bounded electron-hole pairs and balanced electron and hole mobility along the thin films. The use of the high-mobility n-type P(NDI2OD-T2) polymer enables us to overcome one of the problems limiting the efficiency of all-polymer solar cells, resulting in fill factors comparable with those reported for …
Proposal of Up-to-Date Standards on Methods of Measuring Noise Parameters of Microwave Transistors
1994
One of the most interesting topics for microrwave community is the characterization of low-noise transistors. After so many years, the Standards suggested by IEEE in 1960 are considered obsolete by the experimenters. A new methodology is here proposed as a standard. To support this proposal, an original measuring system for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters from noise figure measurements only is presented.