Search results for "VOLTAGE"
showing 10 items of 934 documents
SIMULATION OF THERMAL EFFECTS IN OPTOELECTRONIC DEVICES USING COUPLED ENERGY-TRANSPORT AND CIRCUIT MODELS
2008
A coupled model with optoelectronic semiconductor devices in electric circuits is proposed. The circuit is modeled by differential-algebraic equations derived from modified nodal analysis. The transport of charge carriers in the semiconductor devices (laser diode and photo diode) is described by the energy-transport equations for the electron density and temperature, the drift-diffusion equations for the hole density, and the Poisson equation for the electric potential. The generation of photons in the laser diode is modeled by spontaneous and stimulated recombination terms appearing in the transport equations. The devices are coupled to the circuit by the semiconductor current entering the…
Recombination in Perovskite Solar Cells
2017
Trap-assisted recombination, despite being lower as compared with traditional inorganic solar cells, is still the dominant recombination mechanism in perovskite solar cells (PSCs) and limits their efficiency. We investigate the attributes of the primary trap assisted recombination channels (grain boundaries and interfaces) and their correlation to defect ions in PSCs. We achieve this by using a validated device model to fit the simulations to the experimental data of efficient vacuum-deposited p-i-n and n-i-p CH3NH3PbI3 solar cells, including the light intensity dependence of the open circuit voltage and fill factor. We find that, despite the presence of traps at interfaces and grain bounda…
Modeling and parameter identification of crystalline silicon photovoltaic devices
2011
This paper tests the standard single-exponential model of the electrical characteristics of crystalline-Si photovoltaic devices, focusing on the (apparent) shunt current. Measured characteristics of illuminated polycrystalline-Si photovoltaic modules are modeled, and the apparent shunt current is analyzed. It is shown that an Ohmic-like behavior only takes place at voltages well below the maximum-power point. At higher voltages, the apparent shunt current quickly drops to negligible values. Modeling a crystalline-Si PV device with a fixed shunt resistance may therefore lead to underestimation of the maximum power exceeding 10% at certain irradiance levels.
Optimizing Energy Transduction of Fluctuating Signals with Nanofluidic Diodes and Load Capacitors
2018
[EN] The design and experimental implementation of hybrid circuits is considered allowing charge transfer and energy conversion between nanofluidic diodes in aqueous ionic solutions and conventional electronic elements such as capacitors. The fundamental concepts involved are reviewed for the case of fluctuating zero-average external potentials acting on single pore and multipore membranes. This problem is relevant to electrochemical energy conversion and storage, the stimulus-response characteristics of nanosensors and actuators, and the estimation of the accumulative effects caused by external signals on biological ion channels. Half-wave and full-wave voltage doublers and quadruplers can…
Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes
2016
We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobel…
Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.
2019
Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
Enhancement of photoconversion efficiency in dye-sensitized solar cells exploiting pulsed laser deposited niobium pentoxide blocking layers
2015
Abstract Among all the photovoltaic technologies developed so far, dye-sensitized solar cells are considered as a promising alternative to the expensive and environmentally unfriendly crystalline silicon-based solar cells. One of the possible strategies employed to increase their photovoltaic efficiency is to reduce the charge recombination at the cell conductive substrate through the use of a compact blocking layer. In this paper, we report on the fabrication and characterization of dye-sensitized solar cells employing niobium pentoxide (Nb 2 O 5 ) thin film blocking layer deposited through the pulsed laser deposition technique on conductive substrates. The careful selection of the optimal…
Electrothermal Feedback and Absorption-Induced Open-Circuit-Voltage Turnover in Solar Cells
2018
A solar panel gets hot as it works up on the roof, yet photoinduced self-heating is often ignored when characterizing lab-sized samples. The authors present their understanding of the turnover effect in measurements of open-circuit voltage versus light intensity (Suns-${V}_{O\phantom{\rule{0}{0ex}}C}$ curves), which is identified as a unique feature of all semiconductor-based solar cells. This effect is explained in terms of electrothermal feedback arising when the incident irradiation heats up the device. The authors' model fully explains the experimental data, and allows one to determine key device parameters such as the ideality factor and the band gap from a single measurement.
Use of the electrochemical microcell technique and the SVET for monitoring pitting corrosion at MnS inclusions
2004
The purpose of this paper is to report on use of the electrochemical microcell technique and the scanning vibrating electrode technique for monitoring pitting corrosion on the same stainless steel microstructure. First, the electrochemical behaviour of sites containing a single inclusion was investigated in order to the determine both the successive steps occurring during the inclusions activation and some key-parameters such as the onset potential for MnS dissolution and the pitting potential. Then, the local current distribution around a pitting site was monitored at open circuit potential in order to locate anodic and cathodic regions and to obtain informations on the galvanic coupling b…
Influence of hole transport material ionization energy on the performance of perovskite solar cells
2019
Halide perovskites have shown excellent photophysical properties for solar cell applications which led to a rapid increase of the device efficiency. Understanding the charge carrier dynamics within the active perovskite absorber and at its interfaces will be key to further progress in their development. Here we present a series of fully evaporated devices employing hole transport materials with different ionization energies. The open circuit voltage of the devices, along with their ideality factors, confirm that the former is mainly determined by the bulk and surface recombination in the perovskite, rather than by the energetic offset between the valence band of the perovskite and the highe…