Search results for "VOLTAGE"
showing 10 items of 934 documents
Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation
2012
Threshold voltage (V-th) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (gamma-and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to V-th variation and that the V-th loss and the variability can be modeled by a Weibull statistics with a shape parameter k similar to 2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the V-th loss distributio…
Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current
2001
We have investigated the properties of soft breakdown (SBO) in thin oxide (4.5 nm) nMOSFETs with measurements of the gate and substrate leakage currents using the carrier separation technique. We have observed that, at lower gate voltages, the level of the substrate current exhibits a plateau. We propose that the observed plateau is due to the Shockley-Hall-Read (SHR) generation of hole-electron pairs in the space charge region and at the Si-SiO/sub 2/ interface. At higher voltages, the substrate current steeply increases with voltage, due to a tunneling mechanism, trap-assisted or due to a localized effective thinning of the oxide, from the substrate valence band to the gate conduction ban…
Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique
2006
In this paper, we present our results on the distribution and generation of traps in a SiO 2 /A1 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of the gate pulse we observe an increase of the charge recombined per cycle closely related to the contribution of shallow traps near the SiO 2 /Al 2 O 3 interface. By reducing the pulse frequency we measure an increase in the charge pumping current due to traps located deeper in the Al 2 O 3 . By combining charge pumping and constant voltage stress measurements, we found that the traps are mostly g…
The strain response of piezoelectric multilayer actuators under combined action of electric field and in-plane uniform load
1997
Abstract The driving field governed strain of lead zirconate titanate piezoelectric multilayer actuators have been made within the 107 N/m2 stress and the 3 · 106 V/m triangle-like upward-down-ward driving voltage. A slow strain component as well as a specific relaxation pattern are detected being additional to the periodic part and attributed to the trapped space charge effects favored by nonuniform electric field of the multilayer.
Monte Carlo analysis of polymer translocation with deterministic and noisy electric fields
2012
AbstractPolymer translocation through the nanochannel is studied by means of a Monte Carlo approach, in the presence of a static or oscillating external electric voltage. The polymer is described as a chain molecule according to the two-dimensional “bond fluctuation model”. It moves through a piecewise linear channel, which mimics a nanopore in a biological membrane. The monomers of the chain interact with the walls of the channel, modelled as a reflecting barrier. We analyze the polymer dynamics, concentrating on the translocation time through the channel, when an external electric field is applied. By introducing a source of coloured noise, we analyze the effect of correlated random fluct…
Polymer solar cell based on ternary active layer consists of medium bandgap polymer and two non-fullerene acceptors
2020
Abstract An efficient PSCs consisting of a ternary active layer containing a medium bandgap conjugated polymer P and two well-known non-fullerene acceptors i.e. ITIC-m and Y6 was fabricated. An overall Power Conversion Efficiency (PCE) of about 15.13% was achieved, with the optimized ternary active layer consisting of 20 wt% of ITIC-m in acceptors i.e. P:ITIC-m:Y6 (1:0.3:1.2). This value is higher than that for the binary counter parts i.e. 12.10% and 13.16% for P:ITIC-m (1:1.5 w:w) and P:Y6 (1:1.5 w:w). The higher short circuit current density of the ternary active layer PSCs is related to the broader absorption spectra as compared to the binary active layer analogs. The open circuit volta…
Partial Discharges Diagnostics Along Medium Voltage Cables
2018
In the last years different partial discharge (PD) measuring techniques have been developed because PD diagnostic is the most widely tool to evaluate the insulation condition of a power cable. Recently non-conventional methods and sensors have been used in order to reach improved results in PD measurements. New sensors based on wireless technology were developed in order to simplify PD measurement especially for on-line, on-site diagnosis. The purpose of this work is to perform measurements that allow to study the variation of pulses when they travel along a medium voltage cable and characterize a new smart PD source detector and locator, named Wings sensor. For these purposes, internal PD …
Vacuum-Deposited 2D/3D Perovskite Heterojunctions
2019
Low-dimensional (quasi-) 2D perovskites are being extensively studied in order to enhance the stability and the open-circuit voltage of perovskite solar cells. Up to now, thin 2D perovskite layers on the surface and/or at the grain boundaries of 3D perovskites have been deposited solely by solution processing, leading to unavoidable intermixing between the two phases. In this work, we report the fabrication of 2D/3D/2D perovskite heterostructures by dual-source vacuum deposition, with the aim of studying the interaction between the 3D and 2D phases as well as the charge transport properties of 2D perovskites in neat 2D/3D interfaces. Unlike what is normally observed in solution-processed 3D…
Assigning ionic properties in perovskite solar cells; a unifying transient simulation/experimental study
2021
Kinetic modelling has proven to be essential to understand the time and spatial dependence of charge carriers in solar cells. Traditional drift–diffusion simulations have generally been employed to describe static steady-state conditions, whereas recently the transient counterpart has been able to reveal more detailed information regarding carrier kinetics. In addition to customary electron and hole dynamics, perovskite materials are known to also be strongly affected by the displacement of lattice vacancies, charged atoms or even entire molecules. Such ionic motion transpires on vastly different time scales compared to free charges and are generally not straightforward to simultaneously ac…
Electrical measurements in µ-EDM
2008
The phenomena occurring between the electrodes in electric discharge machining when manufacturing features on the micro-metre scale (µ-EDM) is not fully understood. Poor quantitative knowledge of the sources of variability affecting this process hinders the identification of its natural tolerance limits. Moreover, improvements in measuring systems contribute to the acquisition of new information that often conflicts with existent theoretical models of this process. The prime objective of this paper is to advance the experimental knowledge of µ-EDM by providing a measurement framework for the electrical discharges. The effects of the electrodes metallic materials (Ag, Ni, Ti, W) on the elect…