Search results for "VOLTAGE"
showing 10 items of 934 documents
Analysis of multipactor RF breakdown in a waveguide containing a transversely magnetized ferrite
2016
In this paper, the multipactor RF breakdown in a parallel-plate waveguide partially filled with a ferrite slab magnetized normal to the metallic plates is studied. An external magnetic field is applied along the vertical direction between the plates in order to magnetize the ferrite. Numerical simulations using an in-house 3-D code are carried out to obtain the multipactor RF voltage threshold in this kind of structures. The presented results show that the multipactor RF voltage threshold at certain frequencies becomes considerably lower than for the corresponding classical metallic parallel-plate waveguide with the same vacuum gap
Ultra-low density metallic foams synthesized by contact glow discharge electrolysis (CGDE) for laser experiments★
2018
International audience; The goal of this work is to realize metallic foams synthesized by contact glow discharge electrolysis with specific characteristics. In this paper, we show the results of our studies, consisting in investigating parameters that influence the foams characteristics. Thus, the morphology of metallic foams is examined through scanning electron microscopy (SEM) observations with the acid nature. Moreover, the evolution of the mass and the volume of metallic foams with two experimental parameters (overvoltage and gold concentration) is also investigated. The acid nature affects the foams microscopic structure highlighted by the SEM observations, but for now no valid explan…
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
2022
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and s…
Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes
2016
Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.
A Test Circuit for GaN HEMTs Dynamic Ron Characterization in Power Electronics Applications
2019
Wide bandgap devices such as GaN HEMTs are a promising technology in the field of Power Electronics. Due to the physical properties of the Gallium nitride and the device design, they can outperform their Silicon counterparts for the design of highly efficient power switching converters. However, its design should face certain effects that can diminish its performance. One of such effect is the degradation mechanism known as dynamic onresistance (dynamic RON,), being its mitigation one of the main objectives in the design of the device. In this paper, a circuit is proposed for assessing if this effect is present in GaN transistors in power electronics applications. The circuit allows testing…
Improved Temperature Coefficient Modeling through the Recombination Parameter $\gamma$
2020
This study presents an injection dependent numerical model relating Shocldey-Read-Hall defect parameters in crystalline silicon with the recombination parameter $\gamma$ . We demonstrate how the model can be used to predict $\gamma$ for various single level defects. Additionally, we show that $\gamma$ can be significantly influenced by the injection level, in contrast to what is commonly assumed. The injection dependence is found to correlate with the temperature sensitivity of the Shocldey-Read-Hall lifetime. Finally, we demonstrate that the model can be used to predict the temperature coefficient of the open circuit voltage without the use of a temperature dependent measurement, enabling …
Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals
2002
We have realized nanocrystal memories by using silicon quantum dots embedded in silicon dioxide. The Si dots with the size of few nanometers have been obtained by chemical vapor deposition on very thin tunnel oxides and subsequently coated with a deposited SiO2 control dielectric. A range of temperatures in which we can adequately control a nucleation process, that gives rise to nanocrystal densities of ∼3×1011 cm−2 with good uniformity on the wafer, has been defined. The memory effects are observed in metal-oxide-semiconductor capacitors or field effect transistors by significant and reversible flat band or threshold voltage shifts between written and erased states that can be achieved by …
Characterization of SiPM properties at liquid nitrogen temperature
2016
SiPM operation at cryogenic temperatures fails for many common devices. A particular type with deep channels in the silicon substrate instead of quenching resistors was thoroughly characterized from room temperature down to liquid nitrogen temperature by illuminating it with low light levels. The devices were mounted in vacuum with the temperature stabilized to allow long-term operation. SiPM signals from a LED pulser were acquired with single-pixel resolution. Generalized fits to the charge collection spectra were used to extract properties like single-pixel gain, inter-pixel variation, breakdown voltage, and photon detection efficiency. With these measurements a deeper investigation of th…
Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memori…
2006
We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, com…
Simulated and measured temperature coefficients in compensated silicon wafers and solar cells
2019
Abstract In this paper we perform a thorough investigation of the temperature coefficients of c-Si solar cells and wafers, based on both experimental data and device simulations. Groups of neighboring wafers were selected from different heights of four high performance multicrystalline silicon ingots cast using different dopants concentrations and Si feedstocks; Three different target resistivities of compensated silicon ingots based on Elkem Solar Silicon (ESS®), which are purified through a metallurgical route, and one non-compensated reference ingot. The wafers were processed into Al-BSF and PERCT type solar cells, as well as into lifetime samples subjected to selected solar cell process…