Search results for "adiation effects"

showing 10 items of 97 documents

Interpretation of gut microbiota data in the ‘eye of the beholder’: A commentary and re‐evaluation of data from ‘Impacts of radiation exposure on the…

2021

1.Evidence that exposure to environmental pollutants can alter the gut microbiota composition of wildlife includes studies of rodents exposed to radionuclides. 2.Antwis et al. (2021) used amplicon sequencing to characterise the gut microbiota of four species of rodent (Myodes glareolus, Apodemus agrarius, A. flavicollis and A. sylvaticus) inhabiting the Chernobyl Exclusion Zone (CEZ) to examine possible changes in gut bacteria (microbiota) and gut fungi (mycobiota) associated with exposure to radionuclides and whether the sample type (from caecum or faeces) affected the analysis. 3.The conclusions derived from the analyses of gut mycobiota are based on data that represent a mixture of inges…

jyrsijätsuolistomikrobistoTšernobylin ydinonnettomuusAnimals Wilddigestive systemsäteilybiologiaMicemicrobiotaAnimalsradioaktiivinen säteilyluonnonvaraiset eläimetEcology Evolution Behavior and SystematicsMammalsRadioisotopesBacteriaamplicon sequencingArvicolinaedigestive oral and skin physiologyFungiRadiation ExposureGastrointestinal MicrobiomeChernobyl Nuclear Accidentradiation effectsAnimal Science and ZoologyMurinaemycobiotadietMycobiomeJournal of Animal Ecology
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Single-event effects of space and atmospheric radiation on memory components

2017

Electronic memories are ubiquitous components in electronic systems: they are used to store data, and can be found in all manner of industrial, automotive, aerospace, telecommunication and entertainment systems. Memory technology has seen a constant evolution since the first practical dynamic Random- Access Memories (dynamic RAMs) were created in the late 60's. The demand for ever-increasing performance and capacity and decrease in power consumption was met thanks to a steady miniaturization of the component features: modern memory devices include elements barely a few tens of atomic layers thick and a few hundred of atomic layers wide. The side effect of this constant miniaturization was a…

koetusCOTSkäyttömuistitSRAMMRAMsingle-event effectmemoryRAMFRAMsäteilyfysiikkaradiation effectsflashmuistitsäteilynkestävyysradiation testingkosminen säteilyhiukkassäteilyflash-muistit
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Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

2018

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. Peer reviewed

mallintaminenMaterials sciencePOWER DIODESSchottky diodesSINGLE-EVENT BURNOUT114 Physical sciences01 natural sciencesIonpower semiconductor devicesBARRIER DIODESTHERMAL-DAMAGEchemistry.chemical_compoundMolecular dynamicspuolijohteetsilicon carbide0103 physical sciencesSilicon carbideIrradiationElectrical and Electronic EngineeringSafety Risk Reliability and Quality010302 applied physicsta114ta213ionit010308 nuclear & particles physicsbusiness.industryionisoiva säteilyINORGANIC INSULATORSSchottky diodemodelingHeavy ion irradiationIRRADIATIONElectronic Optical and Magnetic MaterialschemistryionsOptoelectronicsDegradation (geology)Heavy ionbusinession radiation effectsIEEE Transactions on Device and Materials Reliability
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Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

2018

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation peerReviewed

mallintaminenpower semiconductor devicesionitsilicon carbidepuolijohteetionisoiva säteilySchottky diodesmodelingion radiation effects
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Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

2016

An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…

mikroelektroniikkaNuclear and High Energy PhysicsBandgap voltage referencecircuit topologysingle-event transient (SET)Integrated circuit01 natural scienceslaw.inventionsingle event transientsCurrent mirrorlawpulse quenchingsingle-event effects (SEE)ionizationradiation hardening by design (RHBD)0103 physical sciencesElectronic engineeringMicroelectronicsAnalog single-event transient (ASET); bandgap voltage reference (BGR); charge sharing; CMOS analog integrated circuits; heavy ion; ionization; parasitic bipolar effect; pulse quenching; radiation effects; radiation hardening by design (RHBD); reference circuits; single-event effects (SEE); single-event transient (SET); space electronics; Voltage reference; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic EngineeringAnalog single-event transient (ASET)Electrical and Electronic Engineeringparasitic bipolar effectreference voltage010302 applied physicsPhysicsbandgap voltage reference (BGR)charge sharingta114ta213010308 nuclear & particles physicsbusiness.industryanalog integrated circuitsTransistorspace electronicsPulse durationheavy ionPulse (physics)Voltage referenceNuclear Energy and EngineeringPulse-amplitude modulationreference circuitsmicroelectronicsradiation effectsspace applicationsOptoelectronicsbusinessCMOS analog integrated circuitsIEEE Transactions on Nuclear Science
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Influence of specific codopants and post-treatments on Erbium Doped Fibers: Radiation behavior characteristics by CML

2010

optical fibererbium dopingirradiation effects
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Durcissement de matériaux pour l’optique et la photonique destinés à l’utilisation dans un environnement énergétique

2008

optical fibers photonic radiation effects silica
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Influence du rayonnement X sur des fibres et préformes canoniques dopées au phosphore

2009

optical fibers silica radiation effects P-doping
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Near‐IR Radiation‐Induced Attenuation of Aluminosilicate Optical Fibers

2021

The X-ray radiation-induced attenuation (RIA) growth kinetics are studied online in different single-mode aluminosilicate optical fibers in the near-IR (NIR) domain to evaluate their potential in terms of dosimetry. The optical fibers differ by Al contents, core sizes, drawing parameters, and also by a preform deposition process. The data show no dependence of the RIA on all these parameters, a positive result for the design of point or distributed radiation detectors exploiting RIA to monitor the dose. The RIA growth rate is unchanged for dose rates changing from 0.073 to 6.25 Gy(SiO2) s−1, and the RIA linearly increases with the dose up to 2 kGy(SiO2). Small but noticeable RIA changes are…

optical fibersMaterials scienceOptical fiberRadiation induced02 engineering and technology01 natural scienceslaw.inventionX-ray irradiations[SPI]Engineering Sciences [physics]020210 optoelectronics & photonicsAluminosilicatelaw0103 physical sciences0202 electrical engineering electronic engineering information engineeringMaterials Chemistryradiation-induced attenuationElectrical and Electronic EngineeringComposite materialComputingMilieux_MISCELLANEOUS010308 nuclear & particles physicsAttenuationSurfaces and InterfacesCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialsaluminosilicate glassesradiation effectsphysica status solidi (a)
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Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed

power semiconductor devicesmallintaminenpiiionitsilicon carbideschottky diodesmodelingdioditsäteilyion radiation effects
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