Search results for "bandgap"
showing 10 items of 58 documents
Correlation between Zn vacancies and photoluminescence emission in ZnO films.
2006
Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy. Jesus.Zuniga@uv.es Vicente.Munoz@uv.es
Modulation of the electronic properties of GaN films by surface acoustic waves
2003
We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …
Improving the Performance of Quasi-Hemispherical CdZnTe Detectors Using Infrared Stimulation
2012
The influence of monochromatic optical stimulation with wavelengths from 400 to 1100 nm on the characteristics of CdZnTe quasi-hemispherical detectors was studied. It was found that illumination with infrared (IR) light with wavelengths of 870-900 nm close to the absorption edge of the CdZnTe significantly improves the performance of the detector at room temperature. Improvement can be achieved with low-intensity IR illumination at 1-300 μW depending on the chosen wavelength of illumination. Higher intensity illumination was observed to lead to the degradation of the detector's spectrometric characteristics. IR radiation was noted to influence the detector's sensitivity, changing the equili…
Light propagation in triple-film hetero-opals
2005
Spectra of transmitted and forward scattered light of single opal films and triple-film hetero-opals have been compared. The presence of an intermediate film in hetero-opal results in an anomalous increase of the scattered light intensity and in the change of the mainly ballistic light propagation regime to the mainly diffusive one in the frequency range of the photonic bandgap defect state.
Resonance interaction energy between two entangled atoms in a photonic bandgap environment
2018
We consider the resonance interaction energy between two identical entangled atoms, where one is in the excited state and the other in the ground state. They interact with the quantum electromagnetic field in the vacuum state and are placed in a photonic-bandgap environment with a dispersion relation quadratic near the gap edge and linear for low frequencies, while the atomic transition frequency is assumed to be inside the photonic gap and near its lower edge. This problem is strictly related to the coherent resonant energy transfer between atoms in external environments. The analysis involves both an isotropic three-dimensional model and the one-dimensional case. The resonance interaction…
Nanochemistry Aspects of Titania in Dye Sensitized Solar Cells
2009
We analyze the main nanochemistry factors affecting photovoltaic performance in TiO2 employed as wide bandgap semiconductor in dye-sensitized solar cells (DSCs). What is the best morphology of the oxide? Which processes yield the required structures? Finally, putting the discussion in the context of the rapid evolution of photovoltaic technologies, we argue that new titania nanostructures will form the basic component of second-generation solar modules based on dye solar cells.
Low-cost high-haze films based on ZnO nanorods for light scattering in thin c-Si solar cells
2015
Light scattering from ZnO nanorods (NR) is investigated, modeled, and applied to a solar cell. ZnO NR (120-1300 nm long, 280-60 nm large), grown by low-cost chemical bath deposition at 90 degrees C, exhibit diffused-to-total transmitted light as high as 70% and 30% in the 400 and 1000 nm wavelength range, respectively. Data and scattering simulation show that ZnO NR length plays a crucial role in light diffusion effect. A transparent ZnO NR film grown on glass and placed on top of a 1 mu m thick c-Si solar cell is shown to enhance the light-current conversion efficiency for wavelengths longer than 600 nm. (C) 2015 AIP Publishing LLC.
Potential application of some wide band gap materials for UV dosimetry
2005
Properties of some wide band gap materials–natural and CVD diamonds – have been studied for their potential application in UV dosimetry, using methods of optically stimulated luminescence and thermoluminescence. The observed properties are compared with those of the previously studied AlN ceramics. From the OSL excitation spectra, it follows that spectral sensitivity of the studied materials falls mainly into the UVC range, OSL and TL emission spectra are located within the visible light region, thus suitable for usual photodetectors. OSL stimulation spectra of the studied materials have a continuous character and are located in a broad visible/near infrared spectral region implying that th…
Measurement technique for real-time and low-cost biosensing using photonic bandgap structures
2011
We present a sensing technique based on using photonic bandgap structures where only the output power is monitored, without the need of tunable sources or spectrum analyzers, thus providing a real-time and low-cost system.
Layout influence on microwave performance of graphene field effect transistors
2018
The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S -parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gate-length space which maximises the microwave performance.