Search results for "device"
showing 10 items of 1286 documents
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
2020
International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
2020
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in t…
Single-Event Burnout Mechanisms in SiC Power MOSFETs
2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed
Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments
2019
A two-photon absorption technique is used to understand the mechanisms of single-event effects (SEEs) in silicon carbide power metal–oxide–field-effect transistors (MOSFETs) and power junction barrier Schottky diodes. The MOSFETs and diodes have similar structures enabling the identification of effects associated specifically with the parasitic bipolar structure that is present in the MOSFETs, but not the diodes. The collected charge in the diodes varies only with laser depth, whereas it varies with depth and lateral position in the MOSFETs. Optical simulations demonstrate that the variations in collected charge observed are from the semiconductor device structure and not from metal/passiva…
Evidence of octupole-phonons at high spin in 207Pb
2019
A lifetime measurement of the 19/2 state in Pb has been performed using the Recoil Distance Doppler-Shift (RDDS) method. The nuclei of interest were produced in multi-nucleon transfer reactions induced by a Pb beam impinging on a Mo enriched target. The beam-like nuclei were detected and identified in terms of their atomic mass number in the VAMOS++ spectrometer while the prompt γ rays were detected by the AGATA tracking array. The measured large reduced transition probability B(E3,19/2→13/2)=40(8) W.u. is the first indication of the octupole phonon at high spin in Pb. An analysis in terms of a particle-octupole-vibration coupling model indicates that the measured B(E3) value in Pb is compa…
Conceptual design of the AGATA 1$\pi$ array at GANIL
2017
The Advanced GAmma Tracking Array (AGATA) has been installed at the GANIL facility, Caen-France. This setup exploits the stable and radioactive heavy-ions beams delivered by the cyclotron accelerator complex of GANIL. Additionally, it benefits from a large palette of ancillary detectors and spectrometers to address in-beam γ-ray spectroscopy of exotic nuclei. The set-up has been designed to couple AGATA with a magnetic spectrometer, charged-particle and neutron detectors, scintillators for the detection of high-energy γ rays and other devices such as a plunger to measure nuclear lifetimes. In this paper, the design and the mechanical characteristics of the set-up are described. Based on sim…
Correcting for Potential Barriers in Quantum Walk Search
2015
A randomly walking quantum particle searches in Grover's $\Theta(\sqrt{N})$ iterations for a marked vertex on the complete graph of $N$ vertices by repeatedly querying an oracle that flips the amplitude at the marked vertex, scattering by a "coin" flip, and hopping. Physically, however, potential energy barriers can hinder the hop and cause the search to fail, even when the amplitude of not hopping decreases with $N$. We correct for these errors by interpreting the quantum walk search as an amplitude amplification algorithm and modifying the phases applied by the coin flip and oracle such that the amplification recovers the $\Theta(\sqrt{N})$ runtime.
On the performances of a particle tracking detector based on triangular scintillator bars read out by silicon photomultipliers
2020
Abstract A tracking detector composed of scintillator bars with a triangular cross-section read out by silicon photomultipliers in analog mode was developed. The tracker was designed to instrument a low density spectrometer for neutrino experiments. The performance of the system has been studied by exposing it to charged particle beams at the CERN-PS. The tests have shown that the position resolution in reconstructing charged particles’ tracks is within 2.2 mm over the momentum range 0.5–10 GeV/c.
Silicon detectors for the sLHC
2011
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the RandD programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect …