Search results for "duc"

showing 10 items of 58590 documents

Half-Heusler compounds: novel materials for energy and spintronic applications

2012

Half-Heusler compounds are an impressive class of materials with a huge potential for different applications such as future energy applications and for spintronics. The semiconducting Heusler compounds can be identified by the number of valence electrons. The band gap can be tuned between 0 and 4 eV by the electronegativity difference of the constituents. Magnetism can be introduced in these compounds by using rare-earth elements, manganese or ‘electron’ doping. Thus, there is a great interest in the fields of thermoelectrics, solar cells and diluted magnetic semiconductors. The combination of different properties such as superconductivity and topological edge states leads to new multifunct…

010302 applied physicsMaterials scienceSpintronicsCondensed Matter::OtherBand gapMagnetismNanotechnology02 engineering and technologyNarrow-gap semiconductorMagnetic semiconductor021001 nanoscience & nanotechnologyCondensed Matter PhysicsThermoelectric materials01 natural sciences7. Clean energyElectronic Optical and Magnetic MaterialsElectronegativityCondensed Matter::Materials Science0103 physical sciencesMaterials ChemistryCondensed Matter::Strongly Correlated ElectronsElectrical and Electronic Engineering0210 nano-technologyValence electronSemiconductor Science and Technology
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SiC Power Switches Evaluation for Space Applications Requirements

2016

We have evaluated several SiC power switches available on the market, by defining and performing a global test campaign oriented to Space applications requirements, in order to define their main benefits but also the limits of current SiC technology. This allowed to identify a number of target applications where SiC could be used as a technology push for a new generation of space electronics units. Silicon devices qualified for space systems above 600V for the switches and 1200V for the rectifiers are not available due to performances limitations of Si. Among the typical static and dynamic characterization, we have performed temperature and power stress and HTRB tests. More remarkably, we h…

010302 applied physicsMaterials scienceTechnology pushbusiness.industryMechanical EngineeringElectrical engineeringJFET02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesPower (physics)Stress (mechanics)Reliability (semiconductor)Mechanics of Materials0103 physical sciencesMOSFETElectronic engineeringGeneral Materials SciencePower MOSFET0210 nano-technologybusinessRadiation hardeningMaterials Science Forum
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Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity

2016

This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.

010302 applied physicsMaterials scienceTemperature sensitivityintegumentary systemSiliconDopingMetallurgytechnology industry and agriculturefood and beverageschemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesMonocrystalline siliconReduced propertieschemistryElectrical resistivity and conductivity0103 physical sciencesIngot0210 nano-technologySensitivity (electronics)2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
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Application of enthalpy model for floating zone silicon crystal growth

2017

Abstract A 2D simplified crystal growth model based on the enthalpy method and coupled with a low-frequency harmonic electromagnetic model is developed to simulate the silicon crystal growth near the external triple point (ETP) and crystal melting on the open melting front of a polycrystalline feed rod in FZ crystal growth systems. Simulations of the crystal growth near the ETP show significant influence of the inhomogeneities of the EM power distribution on the crystal growth rate for a 4 in floating zone (FZ) system. The generated growth rate fluctuations are shown to be larger in the system with higher crystal pull rate. Simulations of crystal melting on the open melting front of the pol…

010302 applied physicsMaterials scienceTriple pointPhysics::OpticsCrystal growth02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesMolecular physicsInorganic ChemistryCrystalMonocrystalline siliconCrystallographyCondensed Matter::Superconductivity0103 physical sciencesMaterials ChemistryLaser-heated pedestal growthCrystalliteGrowth rate0210 nano-technologySeed crystalJournal of Crystal Growth
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SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

2019

Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…

010302 applied physicsMaterials sciencebusiness.industry020208 electrical & electronic engineering02 engineering and technologyDielectricCondensed Matter Physics01 natural sciencesAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsSemiconductorCatastrophic failureRobustness (computer science)0103 physical sciencesMOSFET0202 electrical engineering electronic engineering information engineeringOptoelectronicsBreakdown voltageCascodeElectrical and Electronic EngineeringSafety Risk Reliability and QualitybusinessShort circuitMicroelectronics Reliability
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Partial discharge of gel insulated high voltage power modules subjected to unconventional voltage waveforms

2016

Performances and duration of the new generation of high voltage power electronic components are dependent on dielectric materials aim to insulating their internal terminals. The presence of defects, some due to faults generated during the manufacturing process, but also due to the internal design of layers and connections, can cause local enhancements of electric field and consequently possible activity of partial discharges phenomena or other effects (aging, tracking) that may result in reduction of device reliability. Furthermore, the usage of unconventional voltage waveforms, like square waves or pulse width modulated waves, additionally increases the electrical aging of the insulation s…

010302 applied physicsMaterials sciencebusiness.industryAcoustics020208 electrical & electronic engineeringElectrical engineeringHigh voltage02 engineering and technologyInsulated-gate bipolar transistor01 natural sciencesSettore ING-IND/31 - ElettrotecnicaReliability (semiconductor)Partial Discharge Gel insulation IGBTvisual_artInsulation systemPower module0103 physical sciencesElectronic componentPartial discharge0202 electrical engineering electronic engineering information engineeringvisual_art.visual_art_mediumbusinessVoltage2016 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)
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2018

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ell…

010302 applied physicsMaterials sciencebusiness.industryDirect currentSurface plasmonPhysics::Opticschemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesDrude modelSurface plasmon polaritonAtomic and Molecular Physics and OpticsCondensed Matter::Materials ScienceOpticschemistryElectrical resistivity and conductivityPhysical vapor deposition0103 physical sciencesOptoelectronics0210 nano-technologybusinessTinPlasmonOptics Express
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High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

2018

010302 applied physicsMaterials sciencebusiness.industryElectrical engineering02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsSmart instruments01 natural sciencesFlexible electronicsTunnel magnetoresistanceReliability (semiconductor)0103 physical sciencesGeneral Materials Science0210 nano-technologybusinessAdvanced Engineering Materials
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Measuring rain energy with the employment of “Arduino”

2016

This paper presents the performances of rainfall energy harvesting through the use of a piezoelectric transducer and an Arduino-based measuring system. Diverse studies agree on the possibility of generating electricity from rainfall, but to date, a study that can measure the quantity of energy produced during rainfall is still missing. The present study begins with results obtained from laboratory researchers using piezoelectric transducers and oscilloscopes — to measure the energy produced from a single raindrop — and concludes with an ad hoc Arduino-based measuring system, aimed at measuring the actual amount of electrical energy produced by a piezoelectric transducer that is exposed to r…

010302 applied physicsMeasure (data warehouse)EngineeringEnergy harvestingbusiness.industryElectric potential energyElectrical engineering02 engineering and technologySettore ING-IND/32 - Convertitori Macchine E Azionamenti Elettrici021001 nanoscience & nanotechnologySettore ING-INF/01 - Elettronica01 natural sciencesSettore ING-IND/31 - ElettrotecnicaElectricity generationTransducerArduino0103 physical sciencesOscilloscope0210 nano-technologybusinessEnergy harvestingPiezoelectric sensorEnergy (signal processing)2016 IEEE International Conference on Renewable Energy Research and Applications (ICRERA)
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Casting technology for ODS steels – dispersion of nanoparticles in liquid metals

2017

Dispersion of particles to produce metal matrix nanocomposites (MMNC) can be achieved by means of ultrasonic vibration of the melt using ultrasound transducers. However, a direct transfer of this method to produce steel composites is not feasible because of the much higher working temperature. Therefore, an inductive technology for contactless treatment by acoustic cavitation was developed. This report describes the samples produced to assess the feasibility of the proposed method for nano-particle separation in steel. Stainless steel samples with inclusions of TiB2, TiO2, Y2O3, CeO2, Al2O3 and TiN have been created and analyzed. Additional experiments have been performed using light metals…

010302 applied physicsNanocompositeMaterials scienceMetallurgychemistry.chemical_elementNanoparticleField strength02 engineering and technologySuperconducting magnet021001 nanoscience & nanotechnology01 natural scienceschemistryCasting (metalworking)Cavitation0103 physical sciences0210 nano-technologyTinDispersion (chemistry)IOP Conference Series: Materials Science and Engineering
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