Search results for "elektroniikkakomponentit"
showing 10 items of 20 documents
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
2023
The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) of gate oxide were extracted and compared. The effect of electron radiation on the device lifetime reduction can be observed at lower stress gate-to-source voltage ( V GS ) levels. The models of T BD and Q BD dependence on the initial gate current ( I G0 ) are proposed which can be used to describe the device breakdown behaviour. peerReviewed
0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments
2021
Neutrons with energies between 0.1-10 MeV can significantly impact the Soft Error Rate (SER) in SRAMs manufactured in scaled technologies, with respect to high-energy neutrons. Their contribution is evaluated in accelerator, ground level and avionic (12 km of altitude) environments. Experimental cross sections were measured with monoenergetic neutrons from 144 keV to 17 MeV, and results benchmarked with Monte Carlo simulations. It was found that even 144 keV neutrons can induce upsets due to elastic scattering. Moreover, neutrons in the 0.1-10 MeV energy range can induce more than 60% of the overall upset rate in accelerator applications, while their contribution can exceed 18% in avionics.…
Proton irradiation-induced reliability degradation of SiC power MOSFET
2023
The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit. peerReviewed
The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment
2020
International audience; The pion resonance in the nuclear reaction cross section is seen to have a direct impact on the single-event effect (SEE) cross section of modern electronic devices. This was experimentally observed for single-event upsets and single-event latchup. Rectangular parallelepiped (RPP) models built to fit proton data confirm the existence of the pion SEE cross-section resonance. The impact on current radiation hardness assurance (RHA) soft error rate (SER) predictions is, however, minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the high-energy hadron equivalence approximation estab…
The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance
2021
Pions make up a large part of the hadronic environment typical of accelerator mixed-fields. Characterizing device cross-sections against pions is usually disregarded in favour of tests with protons, whose single-event latch-up cross-section is, nonetheless, experimentally found to be lower than that of pions for all energies below 250 MeV. While Monte-Carlo simulations are capable of reproducing such behavior, the reason of the observed pion cross-section enhancement can only be explained by a deeper analysis of the underlying mechanisms dominating proton-silicon and pion-silicon reactions. The mechanisms dominating the single-event latchup response are found to vary with the energy under c…
SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below
2020
International audience; The R2E project at CERN has tested a few commercial SRAMs and a custom-designed SRAM, whose data are complementary to various scientific publications. The experimental data include low- and high-energy protons, heavy ions, thermal, intermediate- and high-energy neutrons, high-energy electrons and high-energy pions.
Asymptotic theory of resonant tunneling in quantum waveguides of variable cross-section
2008
Halkaisijaltaan muunnellun kvanttiaaltojohtimen kapenemat toimivat tehokkaina potentiaalivalleina elektronin pitkittäissuuntaiselle liikkeelle. Kaksi kapenemaa muodostaa kvanttiresonaattorin, jossa resonoiva tunnelointi voi tapahtua. Tämä tarkoittaa sitä, että elektronit, joiden energia on lähellä resonanssia, läpäisevät resonaattorin todennäköisyydellä lähellä yhtä.Sarafanov kuvailee väitöskirjassaan asymptoottisesti elektroniaallon etenemistä kvanttiaaltojohtimessa, jossa on kaksi kapenemaa. Aaltoluvun k oletetaan olevan ensimmäisen ja toisen kynnysluvun välissä, jolloin vain sisään tuleva ja poismenevä aalto voivat edetä jokaisessa aaltojohtimen päässä äärettömyydessä. Väitöskirjassa esi…
Proton Direct Ionization in Sub-Micron Technologies : Test Methodologies and Modelling
2023
Two different low energy proton (LEP) test methods, one with quasi-monoenergetic and the other with very wide proton beam energy spectra, have been studied. The two test methodologies have been applied to devices that were suggested from prior heavy-ion tests to be sensitive to proton direct ionization (PDI). The advantages and disadvantages of the two test methods are discussed. The test method using quasi-monoenergetic beams requires device preparation and high energy resolution beams, but delivers results that can be interpreted directly and can be used in various soft error rate (SER) calculation methods. The other method, using a heavily degraded high energy proton beam, requires littl…
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
2023
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
2020
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating. peerReviewed