Search results for "gall"
showing 10 items of 903 documents
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…
Modulation of the electronic properties of GaN films by surface acoustic waves
2003
We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …
Optical characterization of individual GaAs quantum dots grown with height control technique
2013
We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.
Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
2007
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at similar to 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm(2). The lasing emission linewidth is down to 0.033 nm.
Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots
2002
6 páginas, 3 figuras.
Acoustically driven photon antibunching in nanowires.
2011
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless …
Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates
2012
We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.
Photovoltaic module characteristics from CIGS solar cell modelling
2013
We describe our approach to the task of modelling, both at single cell structure and complete module levels, during the solar cell technology development process. This can give very helpful indications, in terms of global photovoltaic module characteristics, for the assessment of intermediate research results and planning of further experiments. We make reference specifically to the fabrication of thin film CIGS solar cells by means of single-step electrodeposition, a technique which appears fairly easy and low-cost but, at the same time, can lead to quite different structural and electrical properties.
Reducing the contribution of the photoemission process to the unwanted beam in photoelectron sources at accelerators
2017
Negative electron affinity (NEA) GaAs photocathodes show different pulse responses depending on the wavelength of photoexcitation. The pulse response at 800 nm shows a long and relatively intense tail, whereas at 400 nm, a tail of similar shape but with an intensity lower by around two orders of magnitude is observed. We explain this behavior with the specific properties of NEA photocathodes and compare it with the response of a positive electron affinity photocathode.
Limiting neutrino magnetic moments with Borexino Phase-II solar neutrino data
2017
A search for the solar neutrino effective magnetic moment has been performed using data from 1291.5 days exposure during the second phase of the Borexino experiment. No significant deviations from the expected shape of the electron recoil spectrum from solar neutrinos have been found, and a new upper limit on the effective neutrino magnetic moment of $\mu_{\nu}^{eff}$ $<$ 2.8$\cdot$10$^{-11}$ $\mu_{B}$ at 90\% c.l. has been set using constraints on the sum of the solar neutrino fluxes implied by the radiochemical gallium experiments.Using the limit for the effective neutrino moment, new limits for the magnetic moments of the neutrino flavor states, and for the elements of the neutrino magne…