Search results for "implantation"
showing 10 items of 733 documents
Double implantation in silica glass for metal cluster composite formation: a study by synchrotron radiation techniques
2001
Silica glass containing metal clusters is studied for both basic and applied aspects, related to the physics of cluster formation and to the optical properties of these materials. To obtain such composite structure, Cu+ Ni, Au+ Cu, Au+ Ag, Cu+ Co, and Cu+ Ag sequential implantations in fused silica were realized. The resulting systems, after possible annealing in various atmospheres, were studied by synchrotron radiation-based techniques, namely, extended X-ray absorption fine structure (EXAFS) spectroscopy, grazing incidence X-ray diffraction (GIXRD), and grazing incidence small angle X-ray scattering (GISAXS). The unique potential of these techniques is the capability to investigate dilut…
Planar Technology for NDT-Ge X-Ray Microcalorimeters: Absorber Fabrication
2009
We have investigated the electroplating process to deposit thick uniform films of tin on a Ge wafer coated with Spin‐On Glass, in order to fabricate the absorbers for Ge microcalorimeter arrays. Here we discuss some technological details and propose two alternative metal bilayer to be used as seed for the electroplating.
Energy leaks through the optical barrier created by H+ implantation in BaTiO3 and LiNbO3 planar waveguides
1998
Abstract The energy leaks through the index barrier created by the proton implantation process are put in evidence in planar optical waveguides made in BaTiO 3 and LiNbO 3 substrates. The selective detection of the light emerging from the guiding region permits to measure the optical attenuation of the guided wave. The results obtained on mono or twice implanted LiNbO 3 and BaTiO 3 waveguides are presented and discussed. It is shown that the light confinement is better in BaTiO 3 than in LiNbO 3 .
Repeatability of the resonance frequency analysis values in implants with a new technology
2019
Background Assess the reliability (by means of reproducibility and repeatability) of the PenguinRFA system, analyse the ISQ values of different implant types and correlate the ISQ with the insertion torque during the placement of the implant. Material and Methods 120 rough surface implants were placed in bovine bone (type II and III). The implants were divided into groups, according to its design. Once the implants were in place, the exact insertion torque was registered. Then, primary stability was measured by means of the resonance frequency analysis with the PenguinRFA and the Osstell ISQ devices. In each implant two transducers of each device were used. Three measurements were obtained …
Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies
1991
High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV {sup 3}He{sup 2} ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects in Si. The results have been compared with those of proton-irradiated Si. A 100--300-K annealing stage was clearly observed in hydrogen (H{sup +}) -implanted Si, and this stage was almost identical to that in the {ital p}-irradiated Si. The final annealing state of the H{sup +}-implanted Si started at about 400 K, and it is connected to annealing out of negatively charged divacancy-oxy…
The “accumulation effect” of positrons in the stack of foils, detected by measurements of the positron implantation profile
2013
The profiles of positrons implanted from the radioactive source 22Na into a stack of foils and plates are the subject of our experimental and theoretical studies. The measurements were performed using the depth scanning of positron implantation profile method, and the theoretical calculations using the phenomenological multi-scattering model (MSM). Several stacks consisting of silver, gold and aluminum foils, and titanium and germanium plates were investigated. We notice that the MSM describes well the experimental profiles; however when the stack consisting of silver and gold foils, the backscattering and linear absorption coefficients differ significantly from those reported in the litera…
Proton implanted waveguides in LiNbO3, KNbO3and BaTiO3
1992
Abstract By using a Van De Graaf accelerator, planar waveguides in LiNbO3, KNbO3, and BaTiO3 are fabricated (at 300 K) by thermally controlled proton implantation. The waveguide properties are investigated by dark line mode spectroscopy. The reconstructed profiles closely follow the ion concentration profiles as determined by simulation (TRIM).
Relation between bone quality values from ultrasound transmission velocity and implant stability parameters--an ex vivo study.
2011
Aim The objective of this study was to determine the relationship between bone qualities measured by ultrasound transmission velocity (UTV) and primary implant stability parameters measured by radiofrequency analysis (RFA) and push-out test (POT) in an ex-vivo model. Materials and methods Three blocks of fresh porcine bone samples were obtained from different anatomic regions, correlating to cortical, mixed and cancellous bone. Mechanical bone qualities of these samples were measured using UTV (expressed in m/s) prior to implantation. Three similar implants (4.1 × 11 mm, AstraTech OS) were inserted into each of the procured bone blocks. The evaluation of implant-bone interface stability was…
Effects of irradiation damage on the back-scattering of electrons: silicon-implanted silicon
2007
Radiation damage in an (initially crystalline) silicon wafer was generated by microbeam implantation with 600 keV Si+ ions (fluence 5 x 1014 ions/cm²). To produce micro-areas with different degrees of damage, 14 implantations at different temperatures (between 23 and 225 °C) were done. The structural state of irradiated areas was characterized using Raman spectroscopy and electron back-scatter diffraction. All irradiated areas showed strong structural damage in surficial regions (estimated depth <1 μm), and at implant substrate temperatures of below 130 °C, the treatment has caused complete amorphization. Back-scattered electron (BSE) images exhibited that observed BSE intensities correlate…
The effects of ion implantation damage to photonic crystal optomechanical resonators in silicon
2021
Abstract Optomechanical resonators were fabricated on a silicon-on-insulator substrate that had been implanted with phosphorus donors. The resonators’ mechanical and optical properties were then measured (at 6 K and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice struc…