Search results for "indium"
showing 10 items of 177 documents
Fabrication and Photoelectrochemical Behavior of Ordered CIGS Nanowire Arrays for Application in Solar Cells
2010
In this work, we report some preliminary results concerning the fabrication of quaternary copper, indium, gallium, and selenium CIGS nanowires that were grown inside the channels of an anodic alumina membrane by one-step potentiostatic deposition at different applied potentials and room temperature. A tunable nanowire composition was achieved through a manipulation of the applied potential and electrolyte composition. X-ray diffraction analysis showed that nanowires, whose chemical composition was determined by energy-dispersive spectroscopy analysis, were amorphous. A composition of Cu0.203In0.153Ga0.131Se0.513, very close to the stoichiometric value, was obtained. These nanostructures wer…
Deposition of indium tin oxide films by laser ablation: Processing and characterization
1998
Abstract In this work an indium tin oxide thin film fabrication technique based on pulsed laser deposition is described and the electrical, optical and mechanical properties of the deposited films are reported. Deposition of high quality films on cold substrates was proved. The third harmonic (355 nm) of an Nd:YAG laser was employed to photoablade the indium tin oxide target.
Three-dimensional electrons and two-dimensional electric subbands in the transport properties of tin-dopedn-type indium selenide: Polar and homopolar…
1991
Electron-scattering mechanisms in n-type indium selenide doped with different amounts of tin are studied by means of the Hall effect (30--300 K) and photo-Hall effect (300 K). The electron mobility at room temperature is found to increase with the free-electron concentration in samples with low tin content. The same behavior is observed when the electron concentration increases due to thermal annealing or photogeneration. That is explained through the presence of two kinds of free electrons contributing to the charge transport along the layers: high-mobility three-dimensional (3D) electrons in the conduction band, and low-mobility two-dimensional electrons in the electric subbands. These 2D…
High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy
2013
We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanis…
Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions
2006
We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x-ray diffraction. Atomic force microscopy shows different surface morphologies between samples grown with and without In. This is ascribed to a modified relaxation mechanism induced by different surface kinetics. These improved MQWs exhibit intersubband absorption at short wavelength (2 mu m). The absorption linewidth is as low as 65 meV and the absorption coefficient is increased by 85%.
Synthesis and High-Pressure Study of Corundum-Type In2O3
2015
This work reports the high-pressure and high-temperature (HP-HT) synthesis of pure rhombohedral (corundum-type) phase of indium oxide (In2O3) from its most stable polymorph, cubic bixbyite-type In2O3, using a multianvil press. Structural and vibrational properties of corundum-type In2O3 (rh-In2O3) have been characterized by means of angle-dispersive powder X-ray diffraction and Raman scattering measurements at high pressures which have been compared to structural and lattice dynamics ab initio calculations. The equation of state and the pressure dependence of the Raman-active modes of the corundum-type phase are reported and compared to those of corundum (α-Al2O3). It can be concluded that …
Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
2008
http://link.aip.org/link/?JAPIAU/104/033523/1
Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings
2007
We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.
Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
1998
9 páginas, 11 figuras.
InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering.
2011
Achieving comprehensive information on thin film lattice dynamics so far has eluded well established spectroscopic techniques. We demonstrate here the novel application of grazing incidence inelastic x-ray scattering combined with ab initio calculations to determine the complete elastic stiffness tensor, the acoustic and low-energy optic phonon dispersion relations of thin wurtzite indium nitride films. Indium nitride is an especially relevant example, due to the technological interest for optoelectronic and solar cell applications in combination with other group III nitrides.