Search results for "memorie"
showing 10 items of 54 documents
The aftermath of resilience in the global world.
2018
Just as there is an aftermath of trauma, there is reason to think of an aftermath of resilience, different from the resilience capacities developed after a trauma. The aftermath of resilience reflects the ability to activate resilient memory in response to traumatic memory in order to rebuild oneself. This is a major challenge for the global mental health of our fragile societies. The challenge is significant for France, Europe and the world. Beyond the overuse of the word resilience in scientific literature and the media, it contributes to the methodology, epistemology and politics of resilience.
Progress towards innovative and energy efficient logic circuits
2020
Abstract The integration of superconductive nanowire logic memories and energy efficient computing Josephson logic is explored. Nanowire memories are based on the integration of switchable superconducting nanowires with a suitable magnetic material. These memories exploit the electro-thermal operation of the nanowires to efficiently store and read a magnetic state. In order to achieve proper memory operation a careful design of the nanowire assembly is necessary, as well as a proper choice of the magnetic material to be employed. At present several new superconducting logic families have been proposed, all tending to minimize the effect of losses in the digital Josephson circuits replacing …
De l’effet transformatif de l’imaginaire :
2019
The polymorphic concept of the novel and the intertextuality of the literary genres characterize the work of Georges Perec, whose writing looks into different genres, codes and models and combines them in order to preserve the singularity of each of his works. Among these W ou le souvenir d’enfance, an unclassifiable novel that alternates fiction and childhood memories, has been the result of a very difficult writing process, that genetic documents can only partly clear up. We propose to reflect on the process of re-functionalization of the adventure novel W, which appeared before as a serialized text in the journal La Quinzaine littéraire and was then integrated into the great autobiograph…
"Ute i naturen lever jeg!" : pasienters opplevelser med natur i spesialisert nevrologisk rehabilitering
2013
Masteroppgave i helsefag ME 518 Universitetet i Agder 2013 Background: A holistic approach dominates when it comes to rehabilitation. The patient’s priorities and involvement are crucial to the quality of life, the ability for the patient to succeed and his or her feel of coherence. Research indicates that outdoor activities can have positive effects on physical, psychological sociable and spiritual levels. However, more research is needed regarding what specific designs of treatment are being carried out and how the different groups of patients respond to these. Purpose and thesis: This paper will try to establish an insight into how patients with neurological diseases perceive outdoor tre…
Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation
2012
Threshold voltage (V-th) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (gamma-and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to V-th variation and that the V-th loss and the variability can be modeled by a Weibull statistics with a shape parameter k similar to 2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the V-th loss distributio…
Peculiar aspects of nanocrystal memory cells: Data and extrapolations
2003
Nanocrystal memory cell are a promising candidate for the scaling of nonvolatile memories in which the conventional floating gate is replaced by an array of nanocrystals. The aim of this paper is to present the results of a thorough investigation of the possibilities and the limitations of such new memory cell. In particular, we focus on devices characterized by a very thin tunnel oxide layer and by silicon nanocrystals formed by chemical vapor deposition. The direct tunneling of the electrons through the tunnel oxide, their storage into the silicon nanocrystals, and furthermore, retention, endurance, and drain turn-on effects, well-known issues for nonvolatile memories, are all investigate…
Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memori…
2006
We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, com…
Memory cell structure integrated on semiconductor
2004
This invention relates to a memory cell Which comprises a capacitor having a ?rst electrode and a second electrode separated by a dielectric layer. Such dielectric layer com prises a layer of a semi-insulating material Which is fully enveloped by an insulating material and in Which an electric charge is permanently present or trapped therein. Such electric charge accumulated close to the ?rst or to the second electrode, depending on the electric ?eld betWeen the electrodes,therebyde?ningdifferentlogiclevels.
Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering
2004
Non volatile memories based on Si nanocrystals (Si-ncs) offer an important alternative to conventional floating gate devices, for the numerous potential advantages associated with the discrete-trap structures [1]. Isolated Si-ncs can be obtained by chemical vapor deposition (CVD) through a fully compatible CMOS process. So far, the main limitation for scaling the CVD Si-nc memories at sub-90 nm node is related to the expected fluctuation, from bit to bit, in the device threshold voltage (VTH), due to the spread in the sur- face fraction (Rdot) covered with Si dots [2]. The reason is the assumption that the dot position and the relative distance are fully random. It will be shown that the nu…
Radiation tolerance of NROM embedded products
2010
Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for b…