Search results for "mesoscopic"
showing 10 items of 709 documents
Design, near-field characterization, and modeling of 45 circle surface-plasmon Bragg mirrors
2006
The development of surface plasmon polariton (SPP) optical elements is mandatory in order to achieve surface plasmon based photonics. A current approach to reach this goal is to take advantage of the interaction of SPP with defects and design elements obtained by the micro- or nano-structuration of the metal film. In this work, we have performed a detailed study of the performance and behavior of SPP-Bragg mirrors, designed for 45\ifmmode^\circ\else\textdegree\fi{} incidence, based on this approach. Mirrors consisting of gratings of both metal ridges on the metal surface and grooves engraved in the metal, fabricated by means of electron beam lithography and focused ion beam, have been consi…
Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties
2013
Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the Gamma-point of the Brillouin zone (E0 gap) has been recently measured, E0 = 0.46 eV at low temperature. The electronic gap at the A point of the Brillouin zone (equivalent to the L point in the zinc-blende structure, E1) has also been obtained recently based on a resonant Raman scattering experiment. In this work, we calculate the band st…
Momentum and energy dissipation of hot electrons in a Pb/Ag(111) quantum well system
2021
The band structure of multilayer systems plays a crucial role for the ultrafast hot carrier dynamics at interfaces. Here, we study the energy- and momentum-dependent quasiparticle lifetimes of excited electrons in a highly ordered Pb monolayer film on Ag(111) prior and after the adsorption of a monolayer of 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA). Using time-resolved two-photon momentum microscopy with femtosecond visible light pulses, we show that the electron dynamics of the Pb/Ag(111) quantum well system is largely dominated by two types of scattering processes: (i) isotropic intraband scattering processes within the quantum well state (QWS) and (ii) isotropic interband sca…
Polarized and resonant Raman spectroscopy on single InAs nanowires
2011
We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculatio…
Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film
2003
Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law. Peer reviewed
Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memori…
2006
We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, com…
Silicon Single Electron Transistors with Single and Multi Dot Characteristics
2000
AbstractSilicon single electron transistors (SET) with side gate have been fabricated on a heavily doped silicon-on-insulator (SOI) substrate. Samples demonstrate two types of characteristics: some of them demonstrate multiple dot behavior and one demonstrates single dot behavior in a wide temperature range. SETs demonstrate oscillations of drain-source current and changes in the width of the Coulomb blockade region with change of gate voltage at least up to 100 K. At temperature below 20 K long-term oscillations (relaxation) of source-drain current after switching the gate voltage has been observed in both multiple dot and single dot samples. Illumination affects both the characteristics o…
Raman study and theoretical calculations of strain in GaN quantum dot multilayers
2006
Changes in strain and phonon mode energy in stacks of self-assembled GaN quantum dots embedded in AlN have been studied by means of Raman spectroscopy as a function of the number of periods. The ${E}_{2H}$ phonon modes related to the quantum dots and AlN spacers are clearly resolved, and their energies allow monitoring the state of strain of the dots and AlN spacers simultaneously. The evolution of the measured phonon frequencies and the associated strains are discussed in comparison with theoretical calculations of the inhomogeneous strain distribution in a system of coherent misfitting inclusions.
Structure of Hybrid Materials Based on Halloysite Nanotubes Filled with Anionic Surfactants
2016
The structures of pristine halloysite nanotubes (HNTs) and ones functionalized by anionic surfactants (sodium dodecanoate and sodium dodecyl sulfate) were investigated by small angle neutron scattering (SANS). These experiments evidenced the structural organization of the surfactants adsorbed onto the HNT cavity and the importance of the surfactant headgroup. Contrast matching experiments were employed in order to mask the dominant scattering effect of the clay hollow nanotubes and to focus on the surfactant organization within the lumen. Further investigation on the mesoscopic structure of the investigated materials was carried out by electric birefringence (EBR), which allowed study of th…
Phonon Softening and Electron-Phonon Interaction in YBa2Cu3O7−δ
1993
We report on the Raman scattering investigation of the 335 cm−1 phonon of Ag (pseudo-B1g) symmetry in thin YBa2Cu3O7−δfilms on various substrates. The experiments yield values for the phonon softening below Tc, which differ from sample to sample. We find a linear relation between the softening and the inverse asymmetry parameter of the phonon Fano-like lineshape, when these parameters, obtained from different samples, are compared with each other. In contrast to this, the onset temperatures for the softening are the same for these samples.