Search results for "photoconductivity"
showing 10 items of 50 documents
Photoconductivity and photovoltaic effect in indium selenide
1983
Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p‐n junctions, bismuth/p‐type InSe, platinum/n‐type InSe, and indium tin oxyde (ITO)/p‐type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed.
Photoconductive properties of Bi2S3nanowires
2015
The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…
Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors
2012
We report a systematic study of time-resolved and power-dependent photoresponse in high-efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum efficiencies greater than 100 over a broad wavelength, reverse bias, and incident power range. Turn-on and turn-off response times (τ on and τ off) are shown to depend on series resistance, bias, optical power, and thickness (W QD) of the Ge-QD layer, with measured τ off values down to ∼40 ns. Two different photoconduction regimes are observed at low and high reverse bias, with a transition around -3 V. A transient current overshoot phenomenon is also observed, which depends on bias and illumination power. © 2012 American …
Antenna-coupled spintronic terahertz emitters driven by a 1550 nm femtosecond laser oscillator
2019
We demonstrate antenna-coupled spintronic terahertz (THz) emitters excited by 1550 nm, 90 fs laser pulses. Antennas are employed to optimize THz outcoupling and frequency coverage of ferromagnetic/nonmagnetic metallic spintronic structures. We directly compare the antenna-coupled devices to those without antennas. Using a 200 μm H-dipole antenna and an ErAs:InGaAs photoconductive receiver, we obtain a 2.42-fold larger THz peak-peak signal, a bandwidth of 4.5 THz, and an increase in the peak dynamic range (DNR) from 53 dB to 65 dB. A 25 μm slotline antenna offered 5 dB larger peak DNR and a bandwidth of 5 THz. For all measurements, we use a comparatively low laser power of 45 mW from a comme…
High-Density Arrays of Germanium Nanowire Photoresistors
2006
Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and photon tracking devices, far-infrared photoresistors, and numerous other devices. During the last few years there has also been increasing interest in the use of nanostructures (quantum dots and wires) of both germanium and silicon as materials for potential applications in sensors, nanophotonics, and nan…
Photoconductivity and optical properties of silicon coated by thin TiO2 film in situ doped by Au nanoparticles
2013
Light trapping enhancement by plasmonic-active metal nanoparticles (NPs) is believed to be a promising approach to increase silicon-based solar cell efficiency. Therefore, we investigated TiO2 films in situ doped by Au NPs (TiO2:AuNPs) deposited by spin coating on a silicon substrate. Photoconductivity and optical properties of the TiO2:AuNPs/Si structures were studied in comparison with those of TiO2/Si reference samples. We found that an introduction of the 40–50 nm diameter AuNPs into the antireflective TiO2 layer deteriorates the antireflection properties and decreases the external yield of photogeneration of charge carriers. This is due to an increase of the layer reflection in the red…
Laser Beam Induced Current measurements on Dye Sensitized Solar Cells and thin film CIG(S,SE)<inf>2</inf> modules
2017
Calculating the efficiency of a solar cell depends on a precise knowledge of its area. Indeed, the photoresponse uniformity is essential to improve the manufacturing process. In this work we report on Laser Beam Induced Current measurements performed on CIG(S,Se) 2 modules and Dye Sensitized Solar Cells. These measurements, performed via a green and a red HeNe lasers both operating at an optical irradiance of 1 Sun, allowed to obtain an accurate photoresponse map of the specimens and highlighted the non-uniformities with a spatial resolution of 400 µm and 80 µm, respectively.
Energy structure and electro-optical properties of organic layers with carbazole derivative
2014
Abstract Phosphorescent organic light emitting diodes are perspective in lighting technologies due to high efficient electroluminescence. Not only phosphorescent dyes but also host materials are important aspect to be considered in the devices where they are a problem for blue light emitting phosphorescent molecules. Carbazole derivative 3,6-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole (TCz1) is a good candidate and has shown excellent results in thermally evaporated films. This paper presents the studies of electrical properties and energy structure in thin films of spin-coated TCz1 and thermally evaporated tris[2-(2,4-difluorophenyl)pyridine]iridium(III) (Ir(Fppy)3). The 0.46 eV difference …
Energy structure of thin films of carbazole derivatives with metal electrodes
2011
Study of charge carrier transport in organic electroluminescent devices, organic photovoltaic devices, and organic field-effect transistors is one of the most important points. In order to realize comparable electron and hole transport in thin organic films with electrodes the energy structure of such devices are of great importance. In this work, we have studied electrical properties and energy structure of two carbazole derivatives. The threshold energy of photoconductivity quantum efficiency is 2.90 eV and optical energy gap is 3.3 eV in thin films is obtained. The values of work function of ITO, Au, Cu and Pd electrodes are energetically close to conductivity level of holes and holes in…
Fast, high-efficiency Germanium quantum dot photodetectors
2012
We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.