Search results for "positron annihilation"
showing 10 items of 757 documents
Presentation of the DSIP method for study of recrystallization process in subsurface zone induced by sandblasting
2011
In the paper we demonstrate the application of the positron annihilation experimental technique based on the scan of the positron implantation profile for observation of the recrystallization process in the subsurface zone (SZ). The SZ was created in the copper sample whose surface was exposed to a sandblasting treatment and then annealed at different temperatures. Application of 68Ge/68Ga positron source allows us to scan the depth of c.a. 150 μm. It was found that recrystallization goes faster close to the surface than in deeper regions. The complete rebuilding of the microstructure takes place at temperature of 600 °C. Some changes in the defect structure begin at temperature of 300 °C.
Determination of defect content and defect profile in semiconductor heterostructures
2011
In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.
Rapidity correlations in Lambda baryon and proton production in hadronic Z0 decays
1998
In an analysis of multihadronic events recorded at LEP by DELPHI in the years 1992 through 1994, charged hadrons are identified using the measurement of their energy loss and their Cherenkov angle. Rapidity correlations of \La-\La, proton-proton, and \La-proton pairs are compared. The agreement with the string and cluster fragmentation models is tested. For those pairs that frame a meson in terms of rapidity the compensation of strangeness is studied. For \La{}$\overline{\mathrm{p}}$ pairs the additional correlation with respect to charged kaons is analysed.
Study of vacancy defects in PbSe and Pb1-xSnxSe by positron annihilation
1993
Abstract Positron lifetime measurements have been performed to study vacancy defects in vapour-liquid-solid (VLS) grown PbSe and Pb 1- x Sn x Se ( x = 0.07, 0.1, 0.3). Post-growth annealing under various vapour pressure conditions has been used to change the number of Pb vacancies, resulting in the determination of the specific positron trapping rate μ Pb v = (1.0±0.1)×10 14 s -1 . The sensitivity range of the positron annihilation method to the Pb vacancies was found to be 10 17 Pb ] 20 cm -3 . Positron lifetimes in perfect PbTe, PbSe and PbS crystals have been calculated. Moreover, we have predicted lifetimes of positrons trapped by vacancies. The calculated lifetimes in bulk and defects …
Searches for B0 decays to combinations of charmless isoscalar mesons
2004
We search for B meson decays into two-body combinations of eta, eta', omega, and phi mesons from 89 million B B-bar pairs collected with the BaBar detector at the PEP-II asymmetric-energy e+e- collider at SLAC. We find the branching fraction BF(B0 -> eta omega) = (4.0^{+1.3}_{-1.2} +- 0.4) x 10^-6 with a significance of 4.3 sigma. For all the other decay modes we set the following 90% confidence level upper limits on the branching fractions, in units of 10^-6 : BF(B0 -> eta eta)<2.8, BF(B0 -> eta eta')<4.6, BF(B0 -> eta' eta')<10, BF(B0 -> eta'omega)<2.8, BF(B0 -> eta phi)<1.0, BF(B0 -> eta' phi)<4.5, BF(B0 -> phi phi)<1.5.
Search for the Lepton Flavor Violation Process J/ψ→eμ at BESIII
2013
We search for the lepton-flavor-violating decay of the $J/\psi$ into an electron and a muon using $(225.3\pm2.8)\times 10^{6}$ $J/\psi$ events collected with the BESIII detector at the BEPCII collider. Four candidate events are found in the signal region, consistent with background expectations. An upper limit on the branching fraction of $\mathcal{B}(J/\psi \to e\mu)< 1.5 \times 10^{-7}$ (90% C.L.) is obtained.
Evidence of Two Resonant Structures in e+e−→π+π−hc
2017
The cross sections of e(+)e(-) -> pi(+) pi(-) hc at center-of-mass energies from 3.896 to 4.600 GeVare measured using data samples collected with the BESIII detector operating at the Beijing Electron Positron Collider. The cross sections are found to be of the same order of magnitude as those of e(+)e(-) -> pi(+) pi(-) J/psi and e(+)e(-) -> pi(+) pi(-) psi (2S), but the line shape is inconsistent with the Y states observed in the latter two modes. Two structures are observed in the e(+)e(-) -> pi(+) pi(-) hc cross sections around 4.22 and 4.39 GeV/c(2), which we call Y(4220)and Y(4390), respectively. A fit with a coherent sum of two Breit-Wigner functions results in a mass of (4218.4(- 4.5)…
Positronics of radiation-induced effects in chalcogenide glassy semiconductors
2015
Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.
Positron annihilation probing of crystallization effects in TAS-235 glass affected by Ga additions
2014
Abstract Crystallization effects in Te20As30Se50 glass known also as TAS-235 affected by Ga additions to Ga2Te20As28Se50 and Ga5Te20As25Se50 compositions are probed with positron annihilation spectroscopy in the measuring modes exploring positron lifetimes and Doppler broadening of annihilation line. Occurring of cubic-phase Ga2Se3 droplets with character nanoscale sizes in partially-crystallized Ga2Te20As28Se50 alloy is shown to be associated with agglomeration of intrinsic free-volume voids, this process being enhanced over microcrystalline scale in Ga5Te20As25Se50 alloy. Crystallization changes in the void structure of TAS-235 glass are considered in terms of free-volume evolution under …
Defects in Martensitic Stainless Steel 1.4031 (EN) Exposed to Friction as Seen by Positron Annihilation
2010
We present experimental results of measurements of the Doppler broadening of annihilation line and positron annihilation lifetimes in martensitic stainless steel 1.4031 (EN) samples exposed to the dry sliding under different loads. In particular, we tested the subsurface zone under the worn surfaces. As a main result, we obtained information about the defect profiles in this zone and the total extent of the damage region induced by the dry sliding.