Search results for "quality"

Speeches About Men and Women in Technical Education: Between Reproduction and Transformation. A Study Located in Two Argentinian Provinces

2020

La formación técnica en Argentina ha sido un ámbito históricamente masculinizado. Ante el incremento de la matrícula femenina y la visibilización y demandas sociales respecto de las desigualdades de género, nos preguntamos, de qué manera las instituciones de ETP favorecen el reconocimiento y la participación con miras a la justicia social. Este trabajo analiza discursos sobre las desigualdades entre varones y mujeres (en interseccionalidad con otras) que circulan en 12 instituciones de educación técnico profesional en dos provincias argentinas (Neuquén y Mendoza), y sobre los dispositivos de acompañamiento a la escolaridad y articulación con el trabajo que allí se construyen. Desplegamos un…

A note on Jordan’s inequality

2020

Abstract In this paper we obtain some bounds in terms of polynomials for the function sin x x {{\sin x} \over x} , x ∈ [0, π].

Complex Analysis and Dynamical Systems VII

2017

FPGA based digital lock-in amplifier for fNIRS systems

2018

Lock-In Amplifiers (LIA) represent a powerful technique helping to improve signals detectability when low signal to noise ratios are experienced. Continuous Wave functional Near Infrared Spectroscopy (CW-fNIRS) systems for e-health applications usually suffer of poor detection due to the presence of strong attenuations of the optical recovering path and therefore small signals are severely dipped in a high noise floor. In this work a digital LIA system, implemented on a Zynq® Field Programmable Gate Array (FPGA), has been designed and tested to verify the quality of the developed solution, when applied in fNIRS systems. Experimental results have shown the goodness of the proposed solutions.

High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition

2020

The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).

Computational volumetric reconstruction of integral imaging with improved depth resolution considering continuously non-uniform shifting pixels

2018

Abstract In this paper, we propose a new computational volumetric reconstruction technique of three-dimensional (3D) integral imaging for depth resolution enhancement by using non-uniform and integer-valued shifting pixels. In a typical integral imaging system, 3D images can be recorded and visualized using a lenslet array. In previous studies, many computational reconstruction techniques such as computational volumetric reconstruction and pixel of elemental images rearrangement technique (PERT) have been reported. However, a computational volumetric reconstruction technique has low visual quality and depth resolution because low-resolution elemental images and uniformly distributed shiftin…

Key factors towards a high-quality additive manufacturing process with ABS material

2019

Abstract Additive Manufacturing technologies have gained a lot of popularity during the past years. The current challenge being the transition of this manufacturing technology from prototype oriented towards mass production. In order to achieve this, fabrication times and mechanical parameters must be improved. This paper aims to identify which are the parameters that have the highest influence on parts obtained with fused deposition modeling (FDM) technology from ABS material. In addition, this study identifies which are the most accurate methods to test the mechanical properties of FDM parts while still respecting ASTM standard for testing the tensile properties of plastics. It was found …

Half-Heusler superlattices as model systems for nanostructured thermoelectrics

2015

The efficiency of thermoelectric materials is directly related to the dimensionless figure of merit , therefore, one of the means to improve ZT is to reduce the thermal conductivity. Our research focuses on half-Heusler superlattices (SLs) and the relationship between the SL period and the thermal conductivity. The cross-plane thermal conductivity of DC-sputtered TiNiSn/HfNiSn SLs was measured by the 3 method at room temperature and a clear reduction of was achieved for all SL periods, in particular for periods smaller than 20 nm. Moreover, the thermal conductivities of TiNiSn and HfNiSn single films display reduced values compared to the literature data for bulk materials. Furthermore, we …

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

2019

Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

2019

Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…