Search results for "raman scattering"
showing 10 items of 284 documents
Resonant Raman scattering of core-shell GaN/AlN nanowires.
2020
Abstract We have analyzed the electron–phonon coupling in GaN/AlN core–shell nanowires by means of Raman scattering excited at various wavelengths in the ultraviolet spectral range (335, 325 and 300 nm) and as a function of the AlN shell thickness. The detailed analysis of the multi-phonon spectra evidences important differences with excitation energy. Under 325 and 300 nm excitation the Raman process is mediated by the allowed A 1(LO) phonon mode, where the atoms vibrate along the NW axis. Considering its selection rules, this mode is easily accessible in backscattering along the wurtzite c axis. Interestingly, for 335 nm excitation the scattering process is instead mediated by the E 1(LO)…
Acousto-Plasmonic Hot Spots: Driving Enhanced Raman Scattering in Metallic Nanoparticles
2010
We study theoretically and experimentally the coupling of acoustic vibrations (phonons) and surface plasmons in metallic nano-objects. The modulation of the surface charge density allows for the interpretation of experimental Raman-Brillouin spectra in silver nanorods.
Optical emission fromSiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study
2015
We investigate the optical properties of high-quality Si nanocrystals $(\mathrm{NCs})/\mathrm{Si}{\mathrm{O}}_{2}$ multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the optical emission of the Si $\mathrm{NCs}/\mathrm{Si}{\mathrm{O}}_{2}$. The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride $(\mathrm{SRON})/\mathrm{Si}{\mathrm{O}}_{2}$ multilayers with 5- and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150 \ifmmode^\circ\else\textdegree\fi{}C, which resulted in the precipitation of Si NCs with an average size of 4.1 a…
Determination of temperature by stimulated raman scattering of molecular nitrogen, oxygen, and carbon dioxide
1993
We have determined the temperature from SRS spectra of N2-N2, N2-CO2, O2-O2, and CO2-CO2 recorded in wide pressure and temperature ranges. The fitting procedure takes simultaneously into account the Dicke effect and motional narrowing. We have quantified the accuracy of the MEG and ECS-P models for rotational relaxation. The temperature extracted from each model is compared with thermocouple measurements. The influence of vibrational broadening and shifting is discussed in detail.
Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties
2013
Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the Gamma-point of the Brillouin zone (E0 gap) has been recently measured, E0 = 0.46 eV at low temperature. The electronic gap at the A point of the Brillouin zone (equivalent to the L point in the zinc-blende structure, E1) has also been obtained recently based on a resonant Raman scattering experiment. In this work, we calculate the band st…
Raman-assisted parametric frequency conversion in a normally dispersive single-mode fiber
1999
International audience; We demonstrate efficient frequency conversion with large frequency shifts of an anti-Stokes signal into a parametrically seeded Stokes idler, which is generated by a highly mismatched three-wave mixing interaction and subsequent Raman amplification in a normally dispersive single-mode fiber. The use of non-phase-matched waves in Raman-assisted three-wave mixing interactions overcomes the strict spectral limitations imposed by phase-matching conditions in parametric frequency-conversion processes.
Polarized and resonant Raman spectroscopy on single InAs nanowires
2011
We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculatio…
Metal doping effects in NIR Raman spectra of YBCO epitaxial films
1996
Metal doping (Co, Zn) of YBCO epitaxial thin films leads to large changes of the scattering efficiencies of various lattice modes in near-infrared (NIR) -Raman spectra (1064 nm) if it is accompanied by a variation of the charge carrier concentration. The results resemble earlier observations in oxygen depleted YBCO thin films. In contrast, no effect is found when metal doping does not change the carrier concentration even if it leads to a massive Tc suppression.
Phonon-plasmon coupling in Si doped GaN nanowires
2016
Abstract The vibrational properties of silicon doped GaN nanowires with diameters comprised between 40 and 100 nm are studied by Raman spectroscopy through excitation with two different wavelengths: 532 and 405 nm. Excitation at 532 nm does not allow the observation of the coupled phonon–plasmon upper mode for the intentionally doped samples. Yet, excitation at 405 nm results in the appearance of a narrow peak at frequencies close to that of the uncoupled A 1 (LO) mode for all samples. This behavior points to phonon–plasmon scattering mediated by large phonon wave-vector in these thin and highly doped nanowires.
Vibrations of free and embedded anisotropic elastic spheres:Application to low-frequency Raman scattering of silicon nanoparticles in silica
2004
Vibrational mode frequencies and damping are calculated for an elastic sphere embedded in an infinite, homogeneous, isotropic elastic medium. Anisotropic elasticity of the sphere significantly shifts the frequencies in comparison to simplified calculations that assume isotropy. New low-frequency Raman light scattering data are presented for silicon spheres grown in a ${\mathrm{SiO}}_{2}$ glass matrix. Principal features of the Raman spectrum are not correctly described by a simple model of the nanoparticle as a free, isotropic sphere, but require both matrix effects and the anisotropy of the silicon to be taken into account. Libration, not vibration, is the dominant mechanism.