Search results for "schottky"
showing 10 items of 109 documents
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment
2018
A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
2019
Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations
2016
Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
2016
Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis…
Characterization of Thin Passive Film-Electrolyte Junctions. The Amorphous Semiconductor (a-SC) Schottky Barrier Approach.
2017
A detailed study of the electronic properties of thin (< 20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and in particular the density of electronic state (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behaviour of a-SC Schottky barrier. It is shown the importance of the DOS distribution in determini…
Photoelectrochemical characterization of anatase-rutile mixed TiO2 nanosponges
2016
This work studies the influence of using hydrodynamic conditions during anodization on the morphology and electrochemical properties of anatase/rutile mixed TiO2 nanotubes (Reynolds number, Re = 0) and nanosponges (Re > 0). To this purpose different techniques were used, such as: microscopy techniques (Field-Emission Scanning Electron Microscope, FE-SEM, and Confocal Laser-Raman Spectroscopy), Electrochemical Impedance Spectroscopy (EIS), Mott Schottky (MS) analysis and photoelectrochemical water splitting tests. This investigation demonstrates that the morphology of TiO2 nanostructures may be greatly affected due to the hydrodynamic conditions and it can be adjusted in order to increase th…
Effect of Reynolds number and lithium cation insertion on titanium anodization
2016
This work studies the influence of using hydrodynamic conditions (Reynolds number, Re = 0 to Re = 600) during Ti anodization and Li+ intercalation on anatase TiO2 nanotubes. The synthesized photocatalysts were characterized by using Field Emission Scanning Electron Microscope (FE-SEM), Raman Confocal Laser Microscopy, Electrochemical Impedance Spectroscopy (EIS), Mott-Schottky analysis (M-S), photoelectrochemical hydrogen production and resistance to photocorrosion tests. The obtained results showed that the conductivity of the NTs increases with Li+ intercalation and Re. The latter is due to the fact that the hydrodynamic conditions eliminate part of the initiation layer formed over the tu…
Electronic properties and corrosion resistance of passive films on austenitic and duplex stainless steels
2018
Abstract Passive films were grown at constant potential in acidic (pH∼2) and alkaline (pH∼13) solutions on chromium, AISI 304L, AISI 316L and Duplex stainless steels. Passive films on chromium grow following a high field mechanism considering the presence of dissolution phenomena. According to the photoelectrochemical characterization, passive films on Cr have a bandgap of 3.4 eV when formed in acidic solution, and of 2.4 eV when formed in alkaline solution due to the formation of Cr(OH)3. These films result to be poorly stable against anodic dissolution due to a very anodic flat band potential. Conversely, impedance and photoelectrochemical measurements proved that passive films on stainle…
Theory of warm ionized gases: Equation of state and kinetic Schottky anomaly
2013
Based on accurate Lennard-Jones type interaction potentials, we derive a closed set of state equations for the description of warm atomic gases in the presence of ionization processes. The specific heat is predicted to exhibit peaks in correspondence to single and multiple ionizations. Such kinetic analogue in atomic gases of the Schottky anomaly in solids is enhanced at intermediate and low atomic densities. The case of adiabatic compression of noble gases is analyzed in detail and the implications on sonoluminescence are discussed. In particular, the predicted plasma electron density in a sonoluminescent bubble turns out to be in good agreement with the value measured in recent experiment…
Behaviour of Nb2O5/PPy contacts: From Schottky barriers to p-n junctions
2009
In this work, a study of the photoelectrochemical responses of Nb O /PPy contacts fabricated in both organic 2 5 and aqueous solutions is performed. From the comparison between the experimental data of PPy photodeposited on Nb O in organic and in aqueous solutions, it is evident that the medium used for the photodeposition 2 5 influences the absorption coefficient, the band gap and flat band potential values.