Search results for "semiconductor"
showing 10 items of 974 documents
Spectroscopy of the Heaviest Elements
2011
The addition of modern arrays of silicon and germanium detectors at the target and focal plane positions of recoil separators has led to a wealth of new spectroscopic data concerning the structure of heavy elements. A particular region of interest has been that of the deformed nuclei close to the N=152 subshell gap. Both detailed decay and in-beam spectroscopic studies have provided complementary data on the location and ordering of single-particle states for proton number in the region of Z=100 and neutron number N=152. Instrumentation developments have allowed in-beam studies to be carried out at the unprecedented level of 20 nanobarns. The future prospects for such studies are also brigh…
Determination of defect content and defect profile in semiconductor heterostructures
2011
In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.
Thermal activated carrier transfer between InAs quantum dots in very low density samples
2010
In this work we develop a detailed experimental study of the exciton recombination dynamics as a function of temperature on QD-ensembles and single QDs in two low density samples having 16.5 and 25 dots/¼m2. We corroborate at the single QD level the limitation of the exciton recombination time in the smallest QDs of the distribution by thermionic emission (electron emission in transient conditions). A portion of these emitted carriers is retrapped again in other (larger) QDs, but not very distant from those emitting the carriers, because the process is limited by the diffusion length at the considered temperature.
Intrapulpal temperature changes during root surface irradiation with an 809-nm GaAlAs laser
2002
The aim of this study was to explore, in vitro, whether the irradiation of human root surfaces with a diode laser might induce nonphysiologic intrapulpal temperature elevations and, therefore, jeopardize pulp vitality.The pulps were removed from human maxillary and mandibular incisors extracted for periodontal reasons. The root canals were enlarged to an apical size #60 file. The teeth were radiographed with standard dental films and a millimeter grid to determine root thickness. The thickness of dentin between the root surface and the pulp in the irradiation areas was 1, 2, and 3 mm. To determine intrapulpal temperature changes during laser irradiation, 0.5-mm K-type thermocouples were ins…
Photochemical Size Reduction of CdSe and CdSe/ZnS Semiconductor Nanoparticles Assisted by nπ* Aromatic Ketones
2009
A novel effect of n pi* aromatic ketones on the quantum dots optical properties is reported. By controlling experimental conditions such as time of irradiation, presence of air in the media, hydrogen donor capacity of the solvent, and irradiation wavelength, core and core-shell CdSe QDs can be resized as convenient.
Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots
2008
Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to bulk. jorbumar@alumni.uv.es Alberto.Garcia@uv.es Ana.Cros@uv.es
Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
2008
http://link.aip.org/link/?JAPIAU/104/033523/1
Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings
2007
We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.
Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
1998
9 páginas, 11 figuras.
Optical active centres in ZnO samples
2006
Abstract In recent years, there has been a resurgence in the interest in the use of ZnO (Eg ∼ 3.37 eV) as a material for a wide range of opto-emitter applications spanning visible and short wavelengths. Bulk, thin films and nanomaterials obtained using different synthesis methods have been investigated for optoelectronic and biotechnological device applications. Nominally undoped bulk samples typically present a myriad-structured near-band-edge recombination, mainly due to free/bound excitons and donor–acceptor pair transitions. Furthermore, deep level emission due to intrinsic defects and extrinsic impurities, such as transition metal ions, are commonly observed in different grades of bulk…