Search results for "semiconductor"
showing 10 items of 974 documents
Electrochemical Deposition Mechanism for ZnO Nanorods: Diffusion Coefficient and Growth Models
2011
Fabrication of nanostructured ZnO thin films is a critical process for many applications based on semiconductor devices. So on understanding of the electrochemical deposition mechanism is also fundamental for knowing the optimal conditions on growth of ZnO nanorods by electrodeposition. In this paper the electrochemical mechanism for ZnO nanorods formation is studied. Results are based on the evolution of the diffusion coefficient using the Cotrell equation, and different growth models proposed by Scharifcker and Hills for nucleation and growth.
High-Frequency Experimental Characterization and Modeling of Six Pack IGBTs Power Modules
2016
In this paper, a method to characterize the high-frequency (HF) behavior of six pack insulated gate bipolar transistors (IGBTs) power module (PM) is presented. The method is based on experimental measurements at the external pins of the device and it allows one to extract internal inductive and capacitive parasitic coupling without the knowledge of structural and physical parameters of the PM. The HF model of a six pack IGBTs PM has been developed, in the frequency range of 150 kHz-30 MHz, and it has been implemented in MATLAB environment. The method has been experimentally validated by comparing the frequency behavior of the PM with the simulated response. Moreover, the HF conducted distur…
Enhanced light scattering in Si nanostructures produced by pulsed laser irradiation
2013
An innovative method for Si nanostructures (NS) fabrication is proposed, through nanosecond laser irradiation (lambda = 532 nm) of thin Si film (120 nm) on quartz. Varying the laser energy fluences (425-1130 mJ/cm(2)) distinct morphologies of Si NS appear, going from interconnected structures to isolated clusters. Film breaking occurs through a laser-induced dewetting process. Raman scattering is enhanced in all the obtained Si NS, with the largest enhancement in interconnected Si structures, pointing out an increased trapping of light due to multiple scattering. The reported method is fast, scalable and cheap, and can be applied for light management in photovoltaics. (C) 2013 AIP Publishin…
Modulated Crystal Structure and Electronic Properties of Semiconductor Cu47Si91P144
2000
Crystals of the copper silicon phosphide were synthesized by the iodine gas transport technique. The x-ray single crystal methods revealed a big superstructure with the lattice parameters a = b = 44.510 and c = 20.772 A and a basic tetragonal substructure with a = 3.7092 and c = 5.1930 A. Analysis of the intensities showed that the superstructure has a 1/2,1/2,1/2 tetragonal substructure with a = 22.255 and c = 10.386 A. This 1/2,1/2,1/2 substructure (Cu47Si91P144) and the basic tetragonal structure (Cu0.71Si1.29P2) were solved by the direct methods and refined in the I4m2 space group. The phosphide is a semiconductor with a small energy gap of 0.0269(1) eV. The electrical properties are co…
An experience of elicited inquiry elucidating the electron transport in semiconductor crystals
2016
In this study we report the results of an inquiry-driven learning path experienced by a sample of 10 electronic engineering students, engaged to investigate the electron transport in semiconductors. The undergraduates were first instructed by following a lecture-based class on condensed matter physics and then involved into an inquiry based path of simulative explorations. The students were invited by two instructors to explore the electron dynamics in a semiconductor bulk by means of Monte Carlo simulations. The students, working in group, had to design their own procedure of exploration, as expected in a traditional guided inquiry. But they experienced several difficulties on planning and…
Wannier90 as a community code: new features and applications
2019
Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a number of new developments that have been recently released in Wannier90 v3.0. In this article we describe these new functionalities, that include the implementation of new features for wannierisation and disentanglement (symmetry-adapted Wannier functions, selectively-localised Wannier functions, s…
Solar blind AlGaN photodetectors with a very high spectral selectivity
2006
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
Current modulation induced stability in laser diode under high optical feedback strength
2021
The back-reflection of emitted laser beam (optical feedback, also know as selfmixing) from various external interfaces are sufficient to cause instability, and prohibiting its use in various fields such as communication, spectroscopy, imaging to name a few. So it is desirable to study the laser dynamics and the conditions causing it to be stable in spite of strong optical feedback. With the aid of mathematical formulation, simulation and backed by experimental evidences, it is demonstrated that the frequency deviation of the laser emission due to current (intensity) modulation alters the dynamic state and boundary conditions of the system such that even under large optical feedback strength…
CRIS: A new method in isomeric beam production
2013
The Collinear Resonance Ionization Spectroscopy (CRIS) experiment at ISOLDE, CERN, uses laser radiation to stepwise excite and ionize an atomic beam for the purpose of ultra-sensitive detection of rare isotopes, and hyperfine-structure measurements. The technique also offers the ability to purify an ion beam that is heavily contaminated with radioactive isobars, including the ground state of an isotope from its isomer, allowing decay spectroscopy on nuclear isomeric states to be performed. The isomeric ion beam is selected by resonantly exciting one of its hyperfine structure levels, and subsequently ionizing it. This selectively ionized beam is deflected to a decay spectroscopy station (DS…
Nonlinear relaxation phenomena in metastable condensed matter systems
2016
Nonlinear relaxation phenomena in three different systems of condensed matter are investigated. (i) First, the phase dynamics in Josephson junctions is analyzed. Specifically, a superconductor-graphene-superconductor (SGS) system exhibits quantum metastable states, and the average escape time from these metastable states in the presence of Gaussian and correlated fluctuations is calculated, accounting for variations in the the noise source intensity and the bias frequency. Moreover, the transient dynamics of a long-overlap Josephson junction (JJ) subject to thermal fluctuations and non-Gaussian noise sources is investigated. Noise induced phenomena are observed, such as the noise enhanced s…