Search results for "semiconductor"
showing 10 items of 974 documents
Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices
2018
The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…
CdTe Detectors
2014
Cadmium telluride (CdTe) compound semiconductors for x-ray detectors have experienced a rather rapid development in the last few years, due to their appealing performance. In this chapter we review the physical properties of semiconductor detectors for x-ray and γ ray spectroscopy. In particular, we focus on compound semiconductor detectors. We also review the principles of operation of both the semiconductor detectors and the electronic chains, with special emphasis on the digital techniques. CdTe detectors’ characteristics and performance enhancements are discussed in depth. Finally, we present some original results on CdTe detectors for medical applications.
Twin coarsening in CdTe(111) films grown on GaAs(100)
2006
Abstract We present a scanning force microscopy study of twin coarsening in CdTe(1 1 1) films grown on GaAs(1 0 0). Two types of CdTe(1 1 1) twins grow epitaxially and with equal probability on the long-range wavy surface structure developed by previous in situ annealing of the GaAs(1 0 0) substrate. Due to this initial substrate wavy structure, the grain coarsening during film growth leads to a quasi-one-dimensional rippled pattern. We propose a coarsening mechanism between twins driven by the formation of stacking faults.
Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties
2013
Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the Gamma-point of the Brillouin zone (E0 gap) has been recently measured, E0 = 0.46 eV at low temperature. The electronic gap at the A point of the Brillouin zone (equivalent to the L point in the zinc-blende structure, E1) has also been obtained recently based on a resonant Raman scattering experiment. In this work, we calculate the band st…
Low Conductive Electrodeposited Poly(2,5-dimethoxyaniline) as a Key Material in a Double Lateral Heterojunction, for Sub-ppm Ammonia Sensing in Humid…
2019
We present a new device called a double lateral heterojunction (DLH) as an ammonia sensor in humid atmosphere. It combines polyaniline derivatives in their poor conducting state with a highly conductive molecular material, lutetium bisphthalocyanine, LuPc2. Polyaniline and poly(2,5-dimethoxyaniline) are electrodeposited on ITO interdigitated electrodes, leading to an original device that can be obtained only by electrochemistry and not by other solution processing techniques. Both polymers lead to highly conducting materials that require a neutralization step before their coverage by LuPc2. While the device based on polyaniline shows ohmic behavior, the nonlinear I- V characteristics of the…
Vacuum-Deposited 2D/3D Perovskite Heterojunctions
2019
Low-dimensional (quasi-) 2D perovskites are being extensively studied in order to enhance the stability and the open-circuit voltage of perovskite solar cells. Up to now, thin 2D perovskite layers on the surface and/or at the grain boundaries of 3D perovskites have been deposited solely by solution processing, leading to unavoidable intermixing between the two phases. In this work, we report the fabrication of 2D/3D/2D perovskite heterostructures by dual-source vacuum deposition, with the aim of studying the interaction between the 3D and 2D phases as well as the charge transport properties of 2D perovskites in neat 2D/3D interfaces. Unlike what is normally observed in solution-processed 3D…
Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes
2016
Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.
Manipulation of charge transfer and transport in plasmonic-ferroelectric hybrids for photoelectrochemical applications
2016
Utilizing plasmonic nanostructures for efficient and flexible conversion of solar energy into electricity or fuel presents a new paradigm in photovoltaics and photoelectrochemistry research. In a conventional photoelectrochemical cell, consisting of a plasmonic structure in contact with a semiconductor, the type of photoelectrochemical reaction is determined by the band bending at the semiconductor/electrolyte interface. The nature of the reaction is thus hard to tune. Here instead of using a semiconductor, we employed a ferroelectric material, Pb(Zr,Ti)O3 (PZT). By depositing gold nanoparticle arrays and PZT films on ITO substrates, and studying the photocurrent as well as the femtosecond …
Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy
1997
Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…
Synthesis and thermoelectric characterisation of bismuth nanoparticles
2009
An effective method of preparation of bismuth nanopowders by thermal decomposition of bismuth dodecyl-mercaptide Bi(SC12H25)3 and preliminary results on their thermoelectric properties are reported. The thermolysis process leads to Bi nanoparticles due to the efficient capping agent effect of the dodecyl-disulfide by-product, which strongly bonds the surface of the Bi clusters, preventing their aggregation and significantly reducing their growth rate. The structure and morphology of the thermolysis products were investigated by differential scanning calorimetry, thermogravimetry, X-ray diffractometry, 1H nuclear magnetic resonance spectroscopy, scanning electron microscopy, and energy dispe…