Search results for "silicon"
showing 10 items of 1391 documents
Observation of New Oscillatory Phenomena during the Electrochemical Anodization of Silicon
1999
This paper reports the observation of large undamped voltage oscillations during the anodic polarization of silicon in electrol yte containing a combination of acids. One of them stimulates oxide growth and the other its chemical dissolution (in the present c ase, (0.01-0.1 M H3PO4) + (0.001- 0.01 M HF). This temporal patterning of the anodization process is shown to be due to the formation of a thin (50-90 nm) oxide layer at the sample surface and its subsequent lifting-off. The mechanism of oxide detachment i s thought to be an isotropic growth of micropores at the oxide/silicon interface triggered on by changes of electrochemical condi tions there.
Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices
2006
The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.
Changes of lead silicate glasses induced by leaching
1998
Abstract The structural differences in the surface region between freshly fractured and leached silicate glasses containing 16.7, 18.8 and 44.4 mol% PbO, respectively, were investigated by photoelectron spectroscopy (XPS). The optical properties and the thicknesses of leached layers were determined by reflection measurements. The binding energies of the O1s signal components for untreated samples can be ascribed to non-bridging (NBO) and bridging (BO) oxygen and oxygen associated with lead as network former (OPb). The binding energy of OPb was found to be 529.1 ± 0.2 eV. For quantitative conclusions, relative XPS sensitivity factors were determined for oxygen, silicon and lead in these glas…
Laser-Fabricated Fluorescent, Ligand-Free Silicon Nanoparticles: Scale-up, Biosafety, and 3D Live Imaging of Zebrafish under Development
2022
This work rationalizes the scalable synthesis of ultrasmall, ligand-free silicon nanomaterials via liquid-phase pulsed laser ablation process using picosecond pulses at ultraviolet wavelengths. Results showed that the irradiation time drives hydrodynamic NP size. Isolated, monodisperse Si-NPs are obtained at high yield (72%) using post-treatment process. The obtained Si-NPs have an average size of 10 nm (not aggregated) and display photoemission in the green spectral range. We directly characterized the ligand-free Si-NPs in a vertebrate animal (zebrafish) and assessed their toxicity during the development. In vivo assay revealed that Si-NPs are found inside in all the early life stages of …
Modeling glass materials
2005
Abstract Structural and dynamic properties of silicate melts and glasses (SiO 2 and its mixtures with Na 2 O and Al 2 O 3 ) are derived from Molecular Dynamics simulations and compared to pertinent experimental data. It is shown that these mixtures exhibit additional intermediate order as compared to pure silica, where the characteristic length scales stem from the tetrahedral network structure. While sodium ions show much faster diffusion through percolating channels than the silicon and oxygen ions forming the surrounding network, aluminium ions are incorporated into the network (leading to tricluster formation) and do not show such an enhanced mobility.
Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth
2004
The fully transient axisymmetric model has been developed for calculation of phase boundaries in large (up to 200 mm diameter) industrial floating zone (FZ) silicon single crystal growth with the needle-eye technique. The transient model is implemented in a specialized computer program. The model and program are based on a previously developed model and program for steady-state FZ process calculations. This transient approach allows studying of such substantially time-dependent process phases as the growth of the starting and ending cones of the crystal rod, which are particularly important for growth of large crystals in practice. Numerous calculations are carried out and the results for r…
Crystal shape 2D modeling for transient CZ silicon crystal growth
2013
Abstract A non-stationary axisymmetric model of Czochralski silicon single crystal growth is presented. The model describes transient behavior of crystal–melt, melt–gas and crystal–gas interfaces in connection with PID-based control of crystal diameter by changing crystal pulling velocity and heater power. To calculate significant crystal shape changes, unstructured finite element mesh is used in crystal and melt together with automatic element size control. Heater temperature changes are modeled with a simplified integral model. A numerical simulation example of start cone growth is given.
Silicon quantum point contact with aluminum gate
2000
Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and A…
Phonon-induced spin relaxation of conduction electrons in silicon crystals
2014
Experimental works managing electrical injection of spin polarization in n-type and p-type silicon have been recently carried out up to room-temperature. In spite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on phonon-induced electron spin depolarization in silicon structures, in a wide range of values of lattice temperature, doping concentration and amplitude of external fields, is still at a developing stage. In order to investigate the spin transport of conduction electrons in lightly doped n-type Si crystals, a set of semiclassical multiparticle Monte Carlo simulations has been carried out. The mean spin …