Search results for "silicon"
showing 10 items of 1391 documents
Impurity analyses of silicon wafers from different manufacturing routes and their impact on LID of finished solar cells
2013
Summarizes the measurements of impurity concentrations in directionally solidified silicon ingots from different feedstocks. The substitutional Carbon and interstitial Oxygen are measured on as-sawn wafers using FTIR. Active iron concentration is mapped on a-Si:H passivated wafers. It is observed that these impurities present in Elkem Solar Grade Silicon (ESS™) concentrations are comparable to the standard polysilicon which are in the acceptable ranges for silicon for solar industry. The measured LID of the finished solar cells is also comparable.
Irradiance Dependent Temperature Coefficients for MC Solar Cells from Elkem Solar Grade Silicon in Comparison with Reference Polysilicon
2014
Abstract An increase in sun intensity enhances the output power of the solar cells, but at the same time the rise of cell temperature affects its electrical performance negatively. The present authors have made a comparative study on temperature coefficients at various irradiances of multicrystalline solar cells made from the standard Siemens process and from material produced by a metallurgical route – the Elkem Solar Silicon (ESS®) process. Such temperature coefficients measured while exposed to various irradiance levels are essential to build a better understanding and prediction of field performance of solar cells manufactured from various feedstock types. In the current experiment, the…
UV-induced Degradation Study of Multicrystalline Silicon Solar Cells Made from Different Silicon Materials
2013
Abstract The effect of ultraviolet-induced degradation (UV-ID) on solar cells made from two different solar grade materials has been compared. By using identical wafer and cell production units, effects originating in the two materials; solar grade produced by the Elkem Solar method (ESS™) was compared to standard polysilicon solar cells. Silicon wafers were selected precisely from similar positions from respective silicon bricks to process identical standard solar cells. The quantum efficiency maps at particular laser wavelengths and IV parameters of all solar cells were measured before and after UV-ID to visualize defects sites in the solar cells and to observe the extent of degradation. …
Dendritic Mesoporous Silica Nanoparticles for pH-Stimuli-Responsive Drug Delivery of TNF-Alpha
2017
Tumor necrosis factor-alpha (TNF-α) is a pleiotropic immune stimulatory cytokine and natural endotoxin that can induce necrosis and regression in solid tumors. However, systemic administration of TNF-α is not feasible due to its short half-life and acute toxicity, preventing its widespread use in cancer treatment. Dendritic mesoporous silica nanoparticles (DMSN) are used coated with a pH-responsive block copolymer gate system combining charged hyperbranched polyethylenimine and nonionic hydrophilic polyethylenglycol to encapsulate TNF-α and deliver it into various cancer cell lines and dendritic cells. Half-maximal effective concentration (EC50 ) for loaded TNF-α is reduced by more than two…
MWP true time delay implemented in PbS-SU8 waveguides
2015
Es presenta un nou tipus de dispositiu de retard en temps real de microones (TTD) basat en la dispersió de punts quàntics col·loïdals PbS (QD) en el fotoresist SU8 disponible comercialment. Amb aquest propòsit, els nanocompostos PbS-SU8 s’integren en una plataforma de silici en forma de guies d’ones de cresta. Quan aquestes estructures es bomben a longituds d’ona per sota de l’interval de banda dels PbS QD, es realitza un desplaçament de fase en un senyal de microones transmès òpticament (a 1550 nm) i, per tant, es produeix un retard temporal. A més, es milloren els resultats mitjançant la implementació d’una nova guia d’ones de doble capa de cresta composta per un nanocompost PbS-SU8 i una…
Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon
2019
Abstract Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Fight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s−1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s−1). The better SRV with AlOxNy film is due …
How far will Silicon nanocrystals push the scaling limits of NVMs technologies?
2004
For the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND flash at least to the 35 nm and 65 nm nodes, respectively.
Structural organization of silanol and silicon hydride groups in the amorphous silicon dioxide network
2011
We present a study on the effects of an isothermal annealing treatment on a-SiO 2 having a significant content of silanol hydride groups (Si-H). We examined the properties of the IR absorption bands of silanol (Si-OH) and silicon hydride groups as a function of the duration of the thermal treatment. We showed that the Si-OH and Si-H groups contents decrease in a linearly correlated way. The annealing dynamics suggest that the two species are close to each other in the amorphous network. We showed that the profile of the silanol groups absorption band is the same as that observed in other commercial a-SiO 2 materials, irrespectively of the concomitant presence of nearby Si-H groups, and, mor…
Accelerated Tests on Si and SiC Power Transistors with Thermal, Fast and Ultra-Fast Neutrons
2020
Neutron test campaigns on silicon (Si) and silicon carbide (SiC) power MOSFETs and IGBTs were conducted at the TRIGA (Training, Research, Isotopes, General Atomics) Mark II (Pavia, Italy) nuclear reactor and ChipIr-ISIS Neutron and Muon Source (Didcot, U.K.) facility. About 2000 power transistors made by STMicroelectronics were tested in all the experiments. Tests with thermal and fast neutrons (up to about 10 MeV) at the TRIGA Mark II reactor showed that single-event burnout (SEB) failures only occurred at voltages close to the rated drain-source voltage. Thermal neutrons did not induce SEB, nor degradation in the electrical parameters of the devices. SEB failures during testing at ChipIr …
Failure Estimates for SiC Power MOSFETs in Space Electronics
2018
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. peerReviewed