Search results for "substrat"
showing 10 items of 1042 documents
Amorphous ultra-wide bandgap ZnOx thin films deposited at cryogenic temperatures
2020
Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these applications. In this paper we report on X-ray amorphous a-ZnOx thin films (~500 nm) deposited at cryogenic temperatures by reactive magnetron sputtering. The substrates were cooled by a nitrogen flow through the copper substrate holder during the deposition. The films were characterized by X-ray diffraction (XRD), Raman, infrared, UV-Vis-NIR spectroscopies, and ellipsometry. The a-ZnOx films on glass and Ti substrates were obtained at the substrate holder temp…
Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films
2006
Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O.…
Cold gas dynamic spray additive manufacturing today: Deposit possibilities, technological solutions and viable applications
2017
This paper reports the current potentials of cold gas dynamic spraying (CGDS). CGDS has been significantly developed to produce several functional solutions categorized as follows: deposits with a single powder nature, composites-based deposits, nanotechnological deposits and hybrid coating/substrate assemblies. CGDS process has improved in proficiency and is still gaining attention from scientists and industry. Covering a wide range of materials, both standard and advanced, this additive manufacturing process offers substantial applications for surface functionalization, structural or dimensional restoration, bulk production providing specific material properties, and art/decoration. Progr…
Modification of magnetic anisotropy in Ni thin films by poling of (011) PMN-PT piezosubstrates
2016
ABSTRACTThis study reports the magnetic and magnetotransport properties of 20 nm thick polycrystalline Ni films deposited by magnetron sputtering on unpoled piezoelectric (011) [PbMg1/3Nb2/3O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The magnetoresistance (MR), as well as the magnetization reversal, is found to depend on the polarization state of the piezosubstrate. Upon poling the PMN-PT substrate, which results in a transfer of strain to the Ni film, the MR value decreases by a factor of 12 at room temperature and a factor of 21 at 50 K for the current direction along the PMN-PT [100] direction, and slightly increases for the [01] current direction. Simultaneously, a strong increase in the …
Rhodamine (B) photocatalysis under solar light on high crystalline ZnO films grown by home-made DC sputtering
2018
Abstract ZnO thin films were deposited by home-made DC sputtering of zinc target under mixed gases (Argon, Oxygen) plasma on glass substrates. Films were deposited by varying oxygen partial pressure (PO2) from 0.09 to 1.3 mbar in the deposition chamber, at a fixed substrate temperature of 100 °C. The samples were characterized by photoluminescence (PL), X-ray diffraction (XRD), optical transmissions (UV–vis), scanning electron microscopy (SEM) and electrical (Hall effect) measurements. The results indicate that by varying the oxygen pressure in the deposition chamber, the films show a precise and well defined photoluminescence emissions for each range of pressure covering almost the entire …
Effect of oxidation post treatments on TiO2 coating manufactured using reactive very low-pressure plasma spraying (R-VLPPS)
2020
Abstract TiO2 coatings manufactured using reactive very low-pressure plasma spraying (R-VLPPS) were analyzed in different regions related to their position compared to the plasma flame. For that, a screen was used in order to hide an area of the substrate from the direct plasma flux. The coating morphology changed from quasi lamellar structure to highly vapor structure and coatings exhibited obvious modifications in terms of phases and mechanical properties. The effect of oxidation post treatment on the as sprayed coating was then studied by selecting two methods: in situ oxidation post treatment and classical thermal treatment. The two post treatments provided an increase of the main rutil…
Stopping cross-section measurements of 4He in TiN1.1O0.27
2000
Abstract The stopping cross-section for 4He projectiles in TiNx compounds has been measured using the backscattering method. A multi-compound marker layer deposited between the test film and the substrate was used to obtain the stopping cross-section at several energies with one energy of the incident beam. Two RBS spectra at definite tilt angles of the sample are taken for each beam energy. The assistance of computer codes to synthesize RBS spectra is very useful to obtain the pertinent information from the displacements of the peaks of the marker layers. Stopping cross-section values are obtained with an estimated uncertainty of about 6%.
Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental an…
2020
We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions have been distinguished and examined in the emission and excitation spectra investigated under synchrotron radiation. The broad PL bands of two defect levels in the AlN were detected at around 3 eV and 4 eV. In the PLE spectra of these bands, a sharp excitonic peak originating most probably from the A-exciton of AlN was clearly visible. Taking into account the exciton binding energy, the measurements allow…
Hydrogen plasma induced photoelectron emission from low work function cesium covered metal surfaces
2017
Experimental results of hydrogen plasma induced photoelectron emission from cesium covered metal surfaces under ion source relevant conditions are reported. The transient photoelectron current during the Cs deposition process is measured from Mo, Al, Cu, Ta, Y, Ni, and stainless steel (SAE 304) surfaces. The photoelectron emission is 2–3.5 times higher at optimal Cs layer thickness in comparison to the clean substrate material. Emission from the thick layer of Cs is found to be 60%–80% lower than the emission from clean substrates. peerReviewed
Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy
2019
The low-frequency noise in a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope (CAFM) probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. YSZ is a promising material for the memristor application since it is featured by high oxygen ion mobility, and the oxygen vacancy concentration in YSZ can be controlled by varying the molar fraction of the stabilizing yttrium oxide. Due to the low diameter of the CAFM probe contact to the YSZ film (similar to 10nm), we are able to measure the electric current flowing through an individual filament both in the low resistive state (LRS) and in the high r…