Search results for "thin film"
showing 10 items of 1200 documents
The Poisson Ratio in CoFe2O4Spinel Thin Films
2012
The response of epitaxial CoFe2O4 thin films to biaxial compressive stress imposed by MgAl2O4 and SrTiO3 single crystalline substrates is studied using X-ray diffraction and Raman spectroscopy. It is found that the Poisson ratio ν signals a non-auxetic behavior and depends on the substrate used. The Raman modes show an increase in frequency when increasing compressive strain by reducing film thickness; this is due to the shrinking of the unit cell volume. Such behavior is in qualitative agreement with recent ab initio calculations, although the measured values are significantly smaller than predictions. In contrast, the measured Poisson ratio is found to be in good agreement with expectatio…
Transversal thermovoltages of (1 1 9) Bi2Sr2CaCu2O8+δ thin films on vicinal (1 1 0) SrTiO3 substrates
1997
Abstract Biaxial textured (1 1 9) oriented Bi 2 Sr 2 CaCu 2 O 8+δ thin films were fabricated by DC-Magnetron sputtering on vicinal (1 1 0) SrTiO 3 substrates. The crystal orientation and stochiometry of the films were obtained from precise X-ray diffraction measurements in four-circle geometry. According to anisotropic transport measurements, the superconducting transition temperature is approximately 47 K and the normal state resistivities along two perpendicular paths differ by a factor of 13.5. Transversal thermoelectric effects were investigated by measuring thermovoltages transverse to temperature gradients parallel to the surface normal induced by pulsed laser irradiation. At room tem…
Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films
2011
Abstract Due to their exceptional thermoelectric properties Half-Heusler alloys like MNiSn (M = Ti,Zr,Hf) have moved into focus. The growth of single crystalline thin film TiNiSn and Zr 0.5 Hf 0.5 NiSn by dc magnetron sputtering is reported. Seebeck and resistivity measurements were performed and their dependence on epitaxial quality is shown. Seebeck coefficient, specific resistivity and power factor for Zr 0.5 Hf 0.5 NiSn at room temperature were measured to be 63 μV K − 1 , 14.1 μΩ m and 0.28 mW K − 2 m − 1 , respectively. Multilayers of TiNiSn and Zr 0.5 Hf 0.5 NiSn are promising candidates to increase the thermoelectric figure-of-merit by decreasing thermal conductivity perpendicular …
Growth and characterization of Mg 1‐x Cd x O thin films
2016
In this paper, we study the growth of thin films of the Mg1–xCdxO alloy in the Mg-rich range of compositions by using the metal organic chemical vapour deposition (MOCVD) method at low pressure. X-ray diffraction (XRD) has been used to analyse the compound formation and the progressive incorporation of Cd2+ ions into the cubic MgO lattice. Both, layers with a single-cubic phase of Mg1–xCdxO and layers with a phase separation, where Cd1–xMgxO and Mg1–xCdxO coexist, have been studied. Finally, a morphological study of the layers has been carried out by using scanning electron microscopy (SEM) and the layers' composition has been measured by energy dispersive X-ray analysis (EDX). (© 2016 WILE…
Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures.
1987
This paper reports investigations of ZnS quasi-amorphous films by electroreflectance (ER). The films were produced by thermal evaporation and their structure determined by electron diffraction. A voltage Vo cos cut was applied through the film with two evaporated Al electrodes. A lock-in amplifier gave 2 signals, Sf at f=ω/2π frequency and S2f at 2f frequency. The S2f spectrum, characteristic of the centrosymmetric bulk component of the film, reveals tails of localized states typical of amorphous semi-conductors. The Sf spectrum, characteristic of the interface layers with broken centro-symmetry, reveals tails of impurity levels which we attributed to diffusion of the electrode metal into t…
Optimization of thermal coefficient of electrical resistivity of Co-Ti-Si thin films due to laser-induced chemical reactions
2001
The CO2 laser induced optimization of the thermal coefficient of electrical resistivity in Co-Ti-Si thin films is realized. The X-ray diffraction studies of the annealed Co- Ti-Si films confirm that the changes of electrical properties are related to forming a small structure of crystalline compounds Ti5Si3 and CoSi2 in an amorphous matrix.
Preparation of photocatalytic brookite thin films
2007
Pure brookite films were deposited from a brookite dispersion obtained by peptizing a mixture brookite–rutile prepared by thermolysis of TiCl4 in a HCl solution. The films were characterised by X-ray diffraction and Raman spectroscopy. The photoactivity of the samples was tested by using the photo-oxidation of 2-propanol in gas–solid regime as a probe reaction. The brookite films efficiently degraded 2-propanol under UV illumination.
Effect of Penetrating Irradiation on Polarization Reversal in PZT Thin Films
2006
Spatially non-uniform imprint behavior induced by X-ray synchrotron, electron, and neutron irradiation has been investigated in Pb(Zr,Ti)O3 thin films. The obtained effects have been explained as a result of acceleration of the bulk screening process induced by irradiation. It has been shown that the spatial distribution of the internal bias field is determined by the domain pattern existing during irradiation. The microstructural changes in the structural characteristics during fatigue cycling have been revealed by high resolution synchrotron X-ray diffraction experiments. Their correlation with the evolution of the switching characteristics has been revealed and discussed.
Preparation and Characterization of Tin Tungstate Thin Films
2015
Tin tungstate thin films were prepared by dc magnetron sputtering method and studied by x-ray diffraction, confocal microscopy and Raman spectroscopy. It is shown that the films are composed mainly of nanocrystalline α-SnWO4 phase. The possibility to use these films as write-once optical recording media is demonstrated.
Thermal conductivity of half-Heusler superlattices
2014
Thin films and superlattices (SLs) of TiNiSn and ZrHfNiSn layers have been grown by dc magnetron sputtering on MgO (100) substrates to reduce the thermal conductivity, aiming for improvement of the thermoelectric figure of merit ZT. The thermal conductivity of 1 Wm−1K−1 was measured by the differential 3ω method for an SL with a periodicity of 8.8 nm. In addition to x-ray diffraction analysis of the SL crystal structure, smooth interfaces were confirmed by scanning/transmission electron microscopy.