Search results for "thin film"
showing 10 items of 1200 documents
Surface-state electrons on a hydrogen film. 1. Annealing of the film
1991
We have investigated the surface of thin films (thickness ∼2 µm) of solid H2 between 1.5 and 4.2 K by measuring the ac conductivity of surface-state electrons (SSE). The films were prepared on a glass substrate by quench condensation at 1.5 K and were therefore initially strongly disordered. In fact the surface of the virgin films before any heat treatment was so rough that no current due to SSE could be observed. Annealing the films decreased the surface roughness and gave rise to a thermal-activation-type temperature dependence of the SSE conductivity. By proper heat treatment up to 8 K the activation energy could be reduced to 10kB.
Ordering and dewetting in spin-coated films of a liquid crystalline main chain polymer
2006
Abstract The ordering of spin-coated films of a main-chain smectic liquid crystalline polymer with an azobenzene group connected by flexible spacers to a phenyl malonate unit has been studied as a function of film thickness using scanning force microscopy and UV/Vis spectroscopy. Already the as-prepared films are characterized by a significant out-of-plane orientation of the azobenzene groups. Annealing of films thicker than 7 nm results in aggregation and homeotropical alignment of azobenzene groups forming smectic layers parallel to the substrate. An optically isotropic mesophase was found upon annealing in the temperature range of smectic mesophase. Films thinner than the bilayer thickne…
Dielectric properties of reactor irradiated ferroelectric thin films
2001
Abstract Radiation effects in highly oriented Pb1Zr0.53Ti0.47O3 (PZT), Pb0.94La0.06Zr0.65Ti0.35O3 (PLZT-6), and PbiZriO3 (PZ) ferroelectric (FE) and antiferroelectric (AF) thin films are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for ITER (International Thermonuclear Experimental Reactor). The dielectric properties (i.e. hysteresis loops, dielectric constants) of the films were investigated in a frequency range from 20 to 105 Hz and at temperatures up to 450 °C, before and after neutron irradiation to a neutron fluence of 5×1021 m−2 (E<0.1 MeV). The dielectric constant was measured during cooling with 1.7 °Cmin−1. The diel…
Atomic layer deposition and characterization of biocompatible hydroxyapatite thin films
2009
Abstract Atomic layer deposition (ALD) was used to produce hydroxyapatite from Ca(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) and (CH 3 O) 3 PO onto Si(100) and Corning (0211). Film crystallinity, stoichiometry, possible impurities and surface morphology were determined. The as-deposited films contained significant amounts of carbonate impurities however, annealing at moist N 2 flow reduced the carbonate content even at 400 °C. The as-deposited Ca–P–O films were amorphous but rapid thermal annealing promoted the formation of the hydroxyapatite phase. Mouse MC 3T3-E1 cells were used for the cell culture experiments. According to the bioactivity studies cell proliferation was enhanc…
Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxide Thin Films
2010
ZrO 2 films doped with Er 2 O 3 were grown by atomic layer deposition from tris(2,2,6,6-tetramethyl-3,5-heptanedionato)erbium, bis(methylcyclopentadienyl)methoxymethylzirconium, and ozone as precursors at 350°C. The erbium content was 1―5 cation %. The films were uniform in thickness. The ZrO 2 :Er 2 O 3 films were crystallized already in the as-deposited state. Upon annealing at 650°C, they were stabilized in the form of cubic or tetragonal polymorph of ZrO 2 . Enhancement in capacitance required intense crystallization that was observed when the film thickness exceeded 4.4 nm. The permittivity of the ZrO 2 :Er 2 O 3 films could reach 31. The capacitors based on the doped ZrO 2 possessed l…
Shape memory NiTi thin films deposited at low temperature
1999
Abstract NiTi shape memory alloy (SMA) thin films have the potential to become high performance actuators for micro-electromechanical systems. Low temperature crystallized NiTi films would ensure a good compatibility with microelectronic processes and polymers. To avoid the drawbacks induced by annealing, we have tried to obtain low temperature crystallized RF sputtered NiTi films by optimising deposition parameters. We have found that NiTi films containing an excess of Ti (∼52%) were crystallized when deposited on Si(100) substrates heated up to only 473 K. NiTi/Si(n) Schottky diodes I–V characteristics showed a temperature dependence indicating structural transition in the NiTi electrode.…
Photocatalytic printing of inorganic nanopatterns via poly(styrene-block-carbosilane) copolymer thin films on titania substrates.
2009
Well-defined, ordered arrays of nanoscale depressions were obtained in linear-brush-type polystyrene-block-polycarbosilane (PS-b-PCS) diblock copolymer thin films by acetone vapor annealing and silica nanodot arrays were directly obtained from such thin films deposited on a titania substrate by one-step exposure to UV light as a result of transformation of the PCS units to silica, driven by the photocatalytic activity of titania concurrent with removal of the organic matrix.
Highly textured Gd2Zr2O7 films grown on textured Ni-5at.%W substrates by solution deposition route: Growth, texture evolution, and microstructure dep…
2012
Abstract Growth, texture evolution and microstructure dependency of solution derived Gd 2 Zr 2 O 7 films deposited on textured Ni-5 at.%W substrates have been extensively studied. Influence of processing parameters, in particular annealing temperature and dwell time, as well as thickness effect on film texture and morphology are investigated in details. It is found that a rotated cube-on-cube epitaxy of Gd 2 Zr 2 O 7 //NiW in-plane texture forms as soon as the (004) out-plane texture appears, implying that epitaxial growth dominates the crystallization processes. Thermal energy plays an important role in minimizing the difference of interfacial energy along two directions in the anisotropic…
Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation
2011
Abstract Low-temperature atomic layer deposition (ALD) processes are intensely looked for to extend the usability of the technique to applications where sensitive substrates such as polymers or biological materials need to be coated by high-quality thin films. A preferred film orientation, on the other hand, is often required to enhance the desired film properties. Here we demonstrate that smooth, crystalline ZnO thin films can be deposited from diethylzinc and water by ALD even at room temperature. The depositions were carried out on Si(100) substrates in the temperature range from 23 to 140 °C. Highly c-axis-oriented films were realized at temperatures below ~ 80 °C. The film crystallinit…
Elaboration and characterization of barium silicate thin films.
2008
International audience; Room temperature depositions of barium on a thermal silicon oxide layer were performed in ultra high vacuum (UHV). In-situ X-ray photoelectron spectroscopy (XPS) analyses were carried out as well after exposure to air as after subsequent annealings. These analyses were ex-situ completed by secondary ion mass spectrometry (SIMS) profiles and transmission electron microscopy (TEM) cross-sectional images. The results showed that after air exposure, the barium went carbonated. Annealing at sufficient temperature permitted to decompose the carbonate to benefit of a barium silicate. The silicate layer was formed by interdiffusion of barium with the initial SiO2 layer.