Development of procedures for programmable proximity aperture lithography

2013

Abstract Programmable proximity aperture lithography (PPAL) with MeV ions has been used in Jyvaskyla and Chiang Mai universities for a number of years. Here we describe a number of innovations and procedures that have been incorporated into the LabView-based software. The basic operation involves the coordination of the beam blanker and five motor-actuated translators with high accuracy, close to the minimum step size with proper anti-collision algorithms. By using special approaches, such writing calibration patterns, linearisation of position and careful backlash correction the absolute accuracy of the aperture size and position, can be improved beyond the standard afforded by the repeata…

Ion-sputtering deposition of Ca–P–O films for microscopic imaging of osteoblast cells

2007

Abstract An ion-beam sputtering technique was used to produce Ca–P–O films on borosilicate glass at room temperature from hydroxyapatite targets using nitrogen, argon and krypton beams at different acceleration voltages. The sputtering target was pressed from high purity hydroxyapatite powder or mixture of high purity hydroxyapatite powder and red phosphorus in order to optimise the film composition. The film composition, determined using time-of-flight elastic recoil detection analysis (TOF–ERDA), was found to be strongly dependent on the ion energy used for deposition. By extra doping of the target with P the correct Ca/P atomic ratio in the deposited films was reached. The films deposite…

Wettability and compositional analysis of hydroxyapatite films modified by low and high energy ion irradiation

2008

Abstract Hydroxyapatite-like thin films on silicon substrate were deposited using atomic layer deposition and were subjected to irradiation with Ar ions accelerated through 0.6–1.2 kV as well as 2 MeV 16 O + ions. After low energy Ar irradiation a significant reduction in contact angle was observed. However, the Ca/P atomic ratio remained unchanged. No reduction in contact angle was seen for high energy 16 O + irradiation. Atomic force microscopy showed the enhancement of floral-like pattern after low energy Ar bombardment while high energy oxygen irradiation lead to raised islands on as-deposited films.

Adhesion of proton beam written high aspect ratio hydrogen silsesquioxane (HSQ) nanostructures on different metallic substrates

2009

Abstract Hydrogen silsesquioxane (HSQ) behaves as a negative resist under MeV proton beam exposure. HSQ is a high-resolution resist suitable for production of tall (

Mobility determination of lead isotopes in glass for retrospective radon measurements

2008

In retrospective radon measurements, the 22-y half life of (210)Pb is used as an advantage. (210)Pb is often considered to be relatively immobile in glass after alpha recoil implanted by (222)Rn progenies. The diffusion of (210)Pb could, however, lead to uncertain wrong retrospective radon exposure estimations if (210)Pb is mobile and can escape from glass, or lost as a result of cleaning-induced surface modification. This diffusion was studied by a radiotracer technique, where (209)Pb was used as a tracer in a glass matrix for which the elemental composition is known. Using the ion guide isotope separator on-line technique, the (209)Pb atoms were implanted into the glass with an energy of …

Aperture-edge scattering in MeV ion-beam lithography. I. Scattering from a straight Ta aperture edge

2009

Collimators are widely used to define MeV ion beams. Recent studies have shown the capability of collimators to define beams of MeV ions with sub-100nm dimensions. Such nanometer beams have potential applications in MeV ion-beam lithography, which is the only maskless technique capable of producing extremely high aspect-ratio micro- and nanostructrures, as well as in high-resolution MeV ion-beam-based tomography. The ion scattering from the collimator edges that define the beam can be a resolution-restricting factor in these applications. Scattering processes at edges are difficult to study using conventional simulation codes because of the complicated geometry. In this part of the work, th…

Fabrication of microfluidic devices using MeV ion beam Programmable Proximity Aperture Lithography (PPAL)

2008

Abstract MeV ion beam lithography is a direct writing technique capable of producing microfluidic patterns and lab-on-chip devices with straight walls in thick resist films. In this technique a small beam spot of MeV ions is scanned over the resist surface to generate a latent image of the pattern. The microstructures in resist polymer can be then revealed using a chemical developer that removes exposed resist, while leaving unexposed resist unaffected. In our system the size of the rectangular beam spot is programmably defined by two L-shaped tantalum blades with well-polished edges. This allows rapid exposure of entire rectangular pattern elements up to 500 × 500 μm in one step. By combin…

Development of an MeV ion beam lithography system in Jyväskylä

2007

Abstract A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyvaskyla cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5–500 μm side with protons up to 6 MeV and heavy ions (20Ne, 85Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithogra…

Development of micro-contact printing of osteosarcoma cells using MeV ion beam lithography

2009

Abstract For investigation of spatial effects in signalling between cells and also signal substances that trigger cell proliferation and behaviour we are developing a micro Contact Printing process ( μ CP ) . In order to allow printing of cells stamps with high aspect ratio are required and these have been fabricated using Programmed Proximity Aperture Lithography (PPAL) with 3 MeV 4 He 2 + ions to produce PMMA masters for casting the stamps in PDMS. A simple printing device was developed and the first results using this to print human osteosarcoma cells is demonstrated.

Resolution performance of programmable proximity aperture MeV ion beam lithography system

2007

AbstractAn ion beam lithography system for light and heavy ions has been developed at the University of Jyväskylä's Accelerator Laboratory. The system employs a programmable proximity aperture to define the beam. The proximity aperture is made up of four Ta blades with precise straight edges that cut the beam in the horizontal and vertical directions. The blade positions and dimensions are controlled by a pair of high-precision linear-motion positioners. The sample is mounted on a X-Y-Z stage capable of moving with 100 nm precision steps under computer control. The resolution performance of the system is primarily governed by the proximity aperture. Pattern edge sharpness is set by the beam…

Proton beam written hydrogen silsesquioxane (HSQ) nanostructures for Nickel electroplating

2009

Abstract Hydrogen silsesquioxane (HSQ) behaves as a negative resist under MeV proton beam exposure. HSQ is a high-resolution resist suitable for production of tall ( 1.5 μ m ) high-aspect-ratio nanostructures with dimensions down to 22 nm. High-aspect-ratio HSQ structures are required in many applications, e.g. nanofluidics, biomedical research, etc. Since P-beam writing is a direct and hence slow process, it is beneficiary to fabricate a reverse image of the patterns in a metallic stamp, e.g. by Ni electroplating. The Ni stamp can then be used to produce multiple copies of the same pattern. In this study we investigate the possibility to produce Ni stamps from p-beam written HSQ samples. H…

Growth of osteoblasts on lithographically modified surfaces

2007

Here we report about preliminary investigations on developing substrates for culturing osteoblasts, the cells responsible for production of mineralised bone, by lithographically modifying the surfaces of several materials. The proton beam writing system at the National University of Singapore was used to fabricate high aspect ratio structures in PMMA, while two-dimensional low aspect ratio structures were fabricated using conventional electron beam lithography (EBL) and UV lithography (UVL) in SU-8. It was found that oxygen plasma treatment of structured SU-8 surfaces changed the surface layer and significantly improved cell attachment and proliferation. Cells grown on patterned thick PMMA …

Programmable proximity aperture lithography with MeV ion beams

2008

A novel MeV ion beam programmable proximity aperture lithography system has been constructed at the Accelerator Laboratory of the University of Jyvaskyla, Finland. This facility can be used to fabricate three dimensional microstructures in thick (<100μm) polymer resist such as polymethylmethacrylate. In this method, MeV ion beams from the 1.7 MV pelletron and K130 cyclotron accelerators are collimated to a beam spot of rectangular shape. This shape is defined by a computer-controlled aperture made of a pair of L-shaped Ta blades which are in close proximity to the sample to minimize the penumbra broadening. Here the authors report on development of the system, the controlling software, the …

Aperture-edge scattering in MeV ion-beam lithography. II. Scattering from a rectangular aperture

2009

The capability of collimators to define beams of MeV ions with sub-100nm dimensions has recently been demonstrated. Such nanometer beams have potential applications in MeV ion-beam lithography, which is the only maskless technique capable of producing extremely high aspect-ratio micro- and nanostructrures, as well as in high resolution MeV ion-beam imaging. Ion scattering from the collimator edges can be a resolution-restricting factor in these applications. Scattering processes at edges are difficult to study using conventional simulation codes because of the complicated geometry. In this part of our work, the authors used the GEANT4 toolkit as a simulation tool for studying the behavior o…

Aperture edge scattering in focused MeV ion beam lithography and nuclear microscopy: An application for the GEANT4 toolkit

2009

Collimators are widely used to define MeV ion beams. Recent studies have shown the capability of combinations of collimators and lenses to define beams of MeV ions with sub-100 nanometre dimensions. Such nanometre beams have potential applications in MeV ion beam lithography, which is the only maskless technique capable of producing extremely high aspect ratio micro- and nano-structrures, as well as in high resolution MeV ion beam based imaging. The ion scattering from the collimator-edges can be a resolution restricting factor in these applications. Scattering processes at edges are difficult to study using conventional simulation codes because of the complicated geometry. In this work we …

Mobility determination of lead isotopes in glass for retrospective radon measurements rad

2008

In retrospective radon measurements, the 22-y half life of 210Pb is used as an advantage. 210Pb is often considered to be relatively immobile in glass after alpha recoil implanted by 222Rn progenies. The diffusion of 210Pb could, however, lead to uncertain wrong retrospective radon exposure estimations if 210Pb is mobile and can escape from glass, or lost as a result of cleaning-induced surface modification. This diffusion was studied by a radiotracer technique, where 209Pb was used as a tracer in a glass matrix for which the elemental composition is known. Using the ion guide isotope separator on-line technique, the 209Pb atoms were implanted into the glass with an energy of 39 keV. The di…

Development of a MeV ion beam lithography system in Jyväskylä

2007

A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyväskylä cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5–500 μm side with protons up to 6 MeV and heavy ions (20Ne, 85Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography syste…

MeV ion beam lithography of high aspect ratio structures with a focused or aperture-shaped beam for applications in biomedical studies and microfluid…

2008