0000000000759149
AUTHOR
David Fuster
Different regimes of electronic coupling and their influence on exciton recombination in vertically stacked InAs/InP quantum wires
8 páginas, 8 figuras.
Growth of low-density vertical quantum dot molecules with control in energy emission
This article is distributed under the terms of the Creative Commons Attribution Noncommercial License.-- This article is part of the series 8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces.
Different strategies towards the deterministic coupling of a single Quantum Dot to a photonic crystal cavity mode
In this work we show two different procedures of fabrication aiming towards the systematic positioning of single InAs quantum dots (QDs) coupled to a GaAs photonic crystal (PC) microcavity. The two approaches are based on the molecular beam epitaxial (MBE) growth of site-controlled QDs (SCQDs) on pre-patterned structures. The PC microcavity (PCM) is introduced previous or after the growth, on each case. We demonstrate the InAs SCQD nucleation on pre-patterned PCMs and a method to perform the QD nucleation respect to an etched ruler that is used to position the PC structure after growth. For both types of structures, we have carried out microphotoluminescence (µPL) spectroscopy experiments a…
Initial stages of self-assembled InAs/InP(001) quantum wire formation
4 páginas, 2 figuras.-- PACS codes: 78.67.Lt; 68.65.La; 68.37.Ps.-- Comunicación oral presentada a la 14ª International Conference on Molecular Beam Epitaxy - MBE XIV celebrada en Tokio (Japón) del 3 al 8 de Septiembre de 2006.
Charge control in laterally coupled double quantum dots
4 figuras, 4 páginas.-- PACS number(s): 78.67.Hc, 73.21.La, 78.55.Cr
Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots
We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies.…
Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates
5 páginas, 5 figuras.
Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires
3 páginas, 2 figuras.-- PACS: 73.21.Hb; 78.55.Cr; 78.67.Lt.-- Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002.
Excitation power dependence of the Purcell effect in photonic crystal microcavity lasers with quantum wires
The Purcell effect dependence on the excitation power is studied in photonic crystal microcavity lasers embedding InAs/InP quantum wires. In the case of non-lasing modes, the Purcell effect has low dependence on the optical pumping, attributable to an exciton dynamics combining free and localized excitons. In the case of lasing modes, the influence of the stimulated emission makes ambiguous the determination of the Purcell factor. We have found that this ambiguity can be avoided by measuring the dependence of the decay time on the excitation power. These results provide insights in the determination of the Purcell factor in microcavity lasers. © 2013 AIP Publishing LLC.
Thermal activated carrier transfer between InAs quantum dots in very low density samples
In this work we develop a detailed experimental study of the exciton recombination dynamics as a function of temperature on QD-ensembles and single QDs in two low density samples having 16.5 and 25 dots/¼m2. We corroborate at the single QD level the limitation of the exciton recombination time in the smallest QDs of the distribution by thermionic emission (electron emission in transient conditions). A portion of these emitted carriers is retrapped again in other (larger) QDs, but not very distant from those emitting the carriers, because the process is limited by the diffusion length at the considered temperature.
Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy
Evolution of the size, shape and composition of self-assembled InAs/InP quantum wires through the Stranski–Krastanov transition has been determined by aberration-corrected Z-contrast imaging. High resolution compositional maps of the wires in the initial, intermediate and final formation stages are presented. (001) is the main facet at their very initial stage of formation, which is gradually reduced in favour of {114} or {118}, ending with the formation of mature quantum wires with {114} facets. Significant changes in wire dimensions are measured when varying slightly the amount of InAs deposited. These results are used as input parameters to build three-dimensional models that allow calcu…
Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution
6 páginas, 5 figuras. In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θc, determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θRθR this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ = θc. These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of In…
Exciton recombination dynamics in InAs∕InP self-assembled quantum wires
In this work we investigate the exciton recombination dynamics in InAs∕InP semiconductor self-assembled quantum wires, by means of continuous wave and time resolved photoluminescence. The continuous wave photoluminescence results seem to indicate that the temperature quenching of the emission band seems to be more probably due to unipolar thermal escape of electrons towards the InP barrier. On the other hand, the analysis of time resolved photoluminescence reveals that the temperature dependence of the radiative and nonradiative recombination times is mainly determined by the dynamics of excitons localized by disorder (high energy tail of the PL band) and strongly localized (low energy tail…
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
http://link.aip.org/link/?JAPIAU/103/056108/1
Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
http://link.aip.org/link/?JAPIAU/104/033523/1
Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire
4 páginas, 5 figuras.-- PACS numbers: 78.67.Lt, 71.30.+h, 71.35. -y.-- Comunicación presentada a la International Conference on the Physics of Semiconductors (ICPS) celebrada en Rio de Jqaneiro (Brasil/2008).
Exciton recombination dynamics inInAs∕InPself-assembled quantum wires
In this work we investigate the exciton recombination dynamics in InAs/ InP semiconductor self-assembled quantum wires, by means of continuous wave and time resolved photoluminescence. The continuous wave photoluminescence results seem to indicate that the temperature quenching of the emission band seems to be more probably due to unipolar thermal escape of electrons towards the InP barrier. On the other hand, the analysis of time resolved photoluminescence reveals that the temperature dependence of the radiative and nonradiative recombination times is mainly determined by the dynamics of excitons localized by disorder shigh energy tail of the PL bandd and strongly localized slow energy tai…
Electrical control of a laterally ordered InAs/InP quantum dash array
5 páginas, 5 figuras.
Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes
Trabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (OECS), celebrada en en Madrid (España) del 7 al 11 de Septiembre de 2009.
Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires
6 páginas, 4 figuras, 1 tabla.-- PACS 62.50.+ p, 73.21.Hb, 78.55.Cr, 78.67.Lt, 81.15.Hi, 81.16.Dn
Size and emission wavelength control of InAs/InP quantum wires
5 páginas, 5 figuras, 1 tabla.-- Comunicación presentada al E-MRS 2004 Spring Meeting celebrado en Estrasburgo (Francia) Mayo del 2004.
Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange
The size and emission wavelength of self-assembled InAs∕InP(001) quantum wires (QWrs) is affected by the P∕As exchange process. In this work, we demonstrate by in situ stress measurements that P∕As exchange at the InAs∕InP interface depends on the surface reconstruction of the InAs starting surface and its immediate evolution when the arsenic cell is closed. Accordingly, the amount of InP grown on InAs by P∕As exchange increases with substrate temperature in a steplike way. These results allow us to engineer the size of the QWr for emission at 1.3 and 1.55 μm at room temperature by selecting the range of substrate temperatures in which the InP cap layer is grown.