Correlated effects of fluorine and hydrogen in fluorinated tin oxide (FTO) transparent electrodes deposited by sputtering at room temperature

2021

The optical and electrical properties of fluorinated tin oxide (FTO) films deposited at room temperature by sputtering have been investigated varying the fluorine content and the hydrogen atmosphere. The complex behavior of the obtained films is disclosed using a wide set of characterization techniques that reveals the combined effects of these two parameters on the generated defects. These defects control the electrical transport (carrier density, mobility and conductivity), the optical properties (band gap and defects-related absorption and photoluminescence) and finally promote the amorphization of the samples. H2 in the sputtering gas does not modify the H content in the films but induc…

Experimental evidence on photo-assisted O− ion production from Al2O3 cathode in cesium sputter negative ion source

2020

The production of negative ions in cesium sputter ion sources is generally considered to be a pure surface process. It has been recently proposed that ion pair production could explain the higher-than-expected beam currents extracted from these ion sources, therefore opening the door for laser-assisted enhancement of the negative ion yield. We have tested this hypothesis by measuring the effect of various pulsed diode lasers on the O − beam current produced from Al 2O 3 cathode of a cesium sputter ion source. It is expected that the ion pair production of O − requires populating the 5d electronic states of neutral cesium, thus implying that the process should be provoked only with specific …

Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films

2018

A comparative study of mechanical properties and elemental and structural composition was made for aluminum nitride thin films deposited with reactive magnetron sputtering and plasma enhanced atomic layer deposition (PEALD). The sputtered films were deposited on Si (100), Mo (110), and Al (111) oriented substrates to study the effect of substrate texture on film properties. For the PEALD trimethylaluminum–ammonia films, the effects of process parameters, such as temperature, bias voltage, and plasma gas (ammonia versus N2/H2), on the AlN properties were studied. All the AlN films had a nominal thickness of 100 nm. Time-of-flight elastic recoil detection analysis showed the sputtered films t…

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

2015

ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). T…

Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition

2020

Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…

Energy-loss straggling of 2-10 MeV/u Kr ions in gases

2013

Measurements have been performed on a time-of-flight setup at the Jyväskylä K130 cyclotron, aiming at energy-loss straggling of heavy ions in gases. Theoretical predictions based on recently developed theory as well as an empirical interpolation formula predict that straggling can be more than ten times higher than Bohr straggling in the MeV/u regime. Our measurements with up to 9.3 MeV/u Kr ions on He, N2, Ne and Kr targets confirm this feature. Our calculations show the relative contributions of linear straggling, bunching including packing, and charge exchange. Our results for stopping cross sections are compatible with values from the literature. Funding Agencies|EU||Academy of Finland …

Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

2017

Room-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied by depositing the films using diethylzinc and O2 plasma from inductively-coupled plasma (ICP) and capacitively-coupled plasma (CCP) plasma source configurations. The CCP-PEALD was operated using both remote and direct plasma. It was observed that the films deposited by means of remote ICP and CCP were all highly oxygen rich, independently on plasma operation parameters, but impurity (H, C) contents could be reduced by increasing plasma pulse time and applied power. With the direct CCP-PEALD the film composition was closer to stoichiometric, and film crystallinity was enhanced. The ZnO film growth was observe…

Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin films

2020

Halide double perovskites have gained significant attention, owing to their composition of low-toxicity elements, stability in air and long charge-carrier lifetimes. However, most double perovskites, including Cs2AgBiBr6, have wide bandgaps, which limit photo conversion efficiencies. The bandgap can be reduced through hallowing with Sb3+, but Sb-rich alloys are difficult to synthesise due to the high formation energy of Cs2AgSbBr6, which itself has a wide bandgap. We develop a solution-based route to synthesis phase-pure Cs2Ag(SbxBi1-x)Br6 thin films, with the mixing parameter x continuous varying over the entire composition range. We reveal that the mixed alloys (x between 0.5 and 0.9) dem…

Energy loss and straggling of MeV Si ions in gases

2017

We present measurements of energy loss and straggling of Si ions in gases. An energy range from 0.5 to 12 MeV/u was covered using the 6 MV EN tandem accelerator at ETH Zurich, Switzerland, and the K130 cyclotron accelerator facility at the University of Jyväskylä, Finland. Our energy-loss data compare well with calculation based on the SRIM and PASS code. The new straggling measurements support a pronounced peak in He gas at around 4 MeV/u predicted by recent theoretical calculations. The straggling curve structure in the other gases (N2, Ne, Ar, Kr) is relatively flat in the covered energy range. Although there is a general agreement between the straggling data and the theoretical calculat…

Impact of Si on the high-temperature oxidation of AlCr(Si)N coatings

2022

The resistance of wear protective coatings against oxidation is crucial for their use at high temperatures. Here, three nanocomposite AlCr(Si)N coatings with a fixed Al/Cr atomic ratio of 70/30 and a varying Si-content of 0 at.%, 2.5 at.% and 5 at.% were analyzed by differential scanning calorimetry, thermogravimetric analysis and X-ray in order to understand the oxidation behavior depending on their Si-content. Additionally, a partially oxidized AlCrSiN coating with 5 at.% Si on a sapphire substrate was studied across the coating thickness by depth-resolved cross-sectional X-ray nanodiffraction and scanning trans-mission electron microscopy to investigate the elemental composition, morphol…

Time-of-flight - Energy spectrometer for elemental depth profiling - Jyväskylä design

2014

Abstract A new time-of-flight elastic recoil detection spectrometer has been built, and initially the main effort was focused in getting good timing resolution and high detection efficiency for light elements. With the ready system, a 154 ps timing resolution was recorded for scattered 4.8 MeV 4 He 2+ ions. The hydrogen detection efficiency was from 80% to 20% for energies from 100 keV to 1 MeV, respectively, and this was achieved by having an additional atomic layer deposited Al 2 O 3 coating on the first timing detector’s carbon foil. The data acquisition system utilizes an FPGA-card to time-stamp every time-of-flight and energy event with 25 ns resolution. The different origins of the ba…

Broadband Ultrahigh-Resolution Spectroscopy of Particle-Induced X Rays: Extending the Limits of Nondestructive Analysis

2016

Nondestructive analysis (NDA) based on x-ray emission is widely used, for example, in the semiconductor and concrete industries. Here, we demonstrate significant quantitative and qualitative improvements in broadband x-ray NDA by combining particle-induced emission with detection based on superconducting microcalorimeter arrays. We show that the technique offers great promise in the elemental analysis of thin-film and bulk samples, especially in the difficult cases where tens of different elements with nearly overlapping emission lines have to be identified down to trace concentrations. We demonstrate the efficiency and resolving capabilities by spectroscopy of several complex multielement …

Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition

2021

Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353) of the Academy of Finland. Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220 ) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353 ) of the Academy of Finland. Publisher Copyright: © 2021 The use of thin-films made by atomic layer deposition (ALD) is increasing in …

Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate

2015

Abstract For every coating it is critical that the coatings are sufficiently durable to withstand practical applications and that the films adhere well enough to the substrate. In this paper the nanotribological, nanomechanical and interfacial properties of 15–100 nm thick atomic layer deposited (ALD) TiO 2 coatings deposited at 110–300 °C were studied using a novel combination of nanoscratch and scanning nanowear testing. Thin film wear increased linearly with increasing scanning nanowear load. The film deposited at 300 °C was up to 58±11 %-points more wear-resistant compared to the films deposited at lower temperatures due to higher hardness and crystallinity of the film. Amorphous/nanocr…

Evolution of the microstructure of sputter deposited TaAlON thin films with increasing oxygen partial pressure

2021

Abstract Recently, quaternary oxynitrides of transition metals and aluminum have attracted increasing interest due to their tunable properties. Within the present work, a series of TaAl(O)N films was sputter deposited using constant nitrogen and varying oxygen partial pressures. The films were grown from single element Ta and Al targets. The deposition parameters were adjusted to obtain a Ta/Al atomic ratio of ~50/50 for the oxygen-free film and were held constant for the following depositions, with the exception of the increasing oxygen partial pressure and compensatory decreasing argon partial pressure. Elastic recoil detection analysis revealed oxygen contents of up to ~26 at.%, while th…

Instrumentation for time-of-flight elastic recoil detection analysis

2016

Time-of-flight elastic recoil detection is an ion beam based method to analyze the elemental composition of thin film samples at different depths. In order to improve the mass resolution and to enable kinematic correction a position sensitive gas ionization chamber energy detector was constructed. This detector along with pre-existing timing detectors were connected to a modern fully digitizing data acquisition setup. This thesis describes the design of these instruments, including all aspects from the mechanical design of the gas ionization detector to the algorithm and software development of the digitizing acquisition setup. The performance of the system has been studied with measurements …

Transition-Edge Sensors for Particle Induced X-ray Emission Measurements

2013

In this paper we present a new measurement setup, where a transitionedge sensor detector array is used to detect X-rays in particle induced X-ray emission measurements with a 2 MeV proton beam. Transition-edge sensors offer orders of magnitude improvement in energy resolution compared to conventional silicon or germanium detectors, making it possible to recognize spectral lines in materials analysis that have previously been impossible to resolve, and to get chemical information from the elements. Our sensors are cooled to the operation temperature (65 mK) with a cryogen-free adiabatic demagnetization refrigerator, which houses a specially designed X-ray snout that has a vacuum tight window…

Time-of-flight ERD with a 200mm2 Si3N4 window gas ionization chamber energy detector

2014

Abstract Low energy heavy ion elastic recoil detection work has been carried out in Jyvaskyla since 2009 using home made timing detectors, a silicon energy detector and a timestamping data acquisition setup forming a time-of-flight–energy telescope. In order to improve the mass resolution of the setup a new energy detector was designed to replace the silicon solid state detector, which suffered from radiation damage and had poor resolution for heavy recoils. In this paper the construction and operation of an isobutane filled gas ionization chamber with a 14 × 14 mm 2 100 nm thick silicon nitride window are described. In addition to greatly improved energy resolution for heavy ions, the dete…

Atomic Layer Deposition of Intermetallic Fe4Zn9 Thin Films from Diethyl Zinc

2022

| openaire: EC/H2020/765378/EU//HYCOAT We present a new type of atomic layer deposition (ALD) process for intermetallic thin films, where diethyl zinc (DEZ) serves as a coreactant. In our proof-of-concept study, FeCl3 is used as the second precursor. The FeCl3 + DEZ process yields in situ crystalline Fe4Zn9 thin films, where the elemental purity and Fe/Zn ratio are confirmed by time-of-flight elastic recoil detection analysis (TOF-ERDA), Rutherford backscattering spectrometry (RBS), atomic absorption spectroscopy (AAS), and energy-dispersive X-ray spectroscopy (EDX) analyses. The film thickness is precisely controlled by the number of precursor supply cycles, as expected for an ALD process.…

Potku – New analysis software for heavy ion elastic recoil detection analysis

2014

Time-of-flight elastic recoil detection (ToF-ERD) analysis software has been developed. The software combines a Python-language graphical front-end with a C code computing back-end in a user-friendly way. The software uses a list of coincident time-of- flight–energy (ToF–E) events as an input. The ToF calibration can be determined with a simple graphical procedure. The graphical interface allows the user to select different elements and isotopes from a ToF–E histogram and to convert the selections to individual elemental energy and depth profiles. The resulting sample composition can be presented as relative or absolute concentrations by integrating the depth profiles over user-defined rang…

Conceptual study of a heavy-ion-ERDA spectrometer for energies below 6 MeV

2017

Abstract Elastic recoil detection analysis (ERDA) is a well established technique and it offers unique capabilities in thin film analysis. Simultaneous detection and depth profiling of all elements, including hydrogen, is possible only with time-of-flight ERDA. Bragg ionization chambers or Δ E - E detectors can also be used to identify the recoiling element if sufficiently high energies are used. The chief limitations of time-of-flight ERDA are the beam induced sample damage and the requirement of a relatively large accelerator. In this paper we propose a detector setup, which could be used with 3 MeV to 6 MeV medium heavy beams from either a single ended accelerator (40Ar) or from a tandem…

Influence of B content on microstructure, phase composition and mechanical properties of CVD Ti(B,N) coatings

2022

Within this work the effect of the B content on the microstructure, phase composition and mechanical properties of CVD Ti(B,N) coatings is investigated. Ti(B,N) coatings with B contents from 0 (fcc-TiN) to ∼5, ∼15, ∼30, ∼45 and 66 (h-TiB2) at.% have been deposited by CVD. The elemental composition of the coatings was confirmed by ERDA and their microstructure was investigated using XRD and SEM. With increasing B content, a transition from a fcc to a h-dominated structure via dual-phase fcc/h-Ti(B,N) was observed, which was accompanied by a decreasing grain size from the µm to nm range. Combinatorial use of Raman spectroscopy, XPS and APT measurements indicated B-rich grain boundary segregat…

The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges

2017

Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In re…

Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination.

2022

Funder: AiF Project, no: ZIM-KK5085302DF0

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

2017

Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300 C), film thickness (20-300 nm), bilayer thickness (0.1-100 nm),…

Reaction pathways for atomic layer deposition with lithium hexamethyl disilazide, trimethyl phosphate, and oxygen plasma

2020

Atomic layer deposition (ALD) of lithium-containing films is of interest for the development of next-generation energy storage devices. Lithium hexamethyl disilazide (LiHMDS) is an established precursor to grow these types of films. The LiHMDS molecule can either be used as a single-source precursor molecule for lithium or as a dual-source precursor molecule for lithium and silicon. Single-source behavior of LiHMDS is observed in the deposition process with trimethylphosphate (TMP) resulting in the deposition of crystalline lithium phosphate (Li3PO4). In contrast, LiHMDS exhibits dual-source behavior when combined with O2 plasma, resulting in a lithium silicate. Both processes were characte…

Kinetics of Bulk Lifetime Degradation in Float‐Zone (FZ) Silico n : Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen vs …

2020

Float-zone (FZ) silicon often has grown-in defects that are thermally activated in a broad temperature window (≈300–800 °C). These defects cause efficient electron-hole pair recombination, which deteriorates the bulk minority carrier lifetime and thereby possible photovoltaic conversion efficiencies. Little is known so far about these defects which are possibly Si-vacancy/nitrogen-related (VxNy). Herein, it is shown that the defect activation takes place on sub-second timescales, as does the destruction of the defects at higher temperatures. Complete defect annihilation, however, is not achieved until nitrogen impurities are effused from the wafer, as confirmed by secondary ion mass spectro…

Digitizing data acquisition and time-of-flight pulse processing for ToF-ERDA

2016

A versatile system to capture and analyze signals from multi channel plate (MCP) based time-of-flight detectors and ionization based energy detectors such as silicon diodes and gas ionization chambers (GIC) is introduced. The system is based on commercial digitizers and custom software. It forms a part of a ToF-ERDA spectrometer, which has to be able to detect recoil atoms of many different species and energies. Compared to the currently used analogue electronics the digitizing system provides comparable time-of-flight resolution and improved hydrogen detection efficiency, while allowing the operation of the spectrometer be studied and optimized after the measurement. The hardware, data acq…

Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness a…

2014

Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD enables conformal growth on 3-dimensional structures at relatively low temperatures. For MEMS device design and fabrication, the understanding of stress and mechanical properties such as elastic modulus, hardness and adhesion of thin film is crucial. In this work a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al2O3) films grown at 110-300 C from trimethylaluminum and water is presented. Film stress was analyzed by wafer curvature measurements, elastic modulus by nanoindentation and surface-acoustic wave measurements, hardness by na…

Secondary electron flight times and tracks in the carbon foil time pick-up detector

2014

Carbon foil time pick-up detectors used in the time-of-flight measurements of MeV energy ions have been studied in connection to time-of-flight-energy spectrometer used for heavy ion elastic recoil detection analysis. In experimental coincident TOF-E data characteristic halos are observed around light element isobars, and the origin of these halos were studied. The experimental data indicated that these halos originate from single electron events occurring before the electron multiplication in the microchannel plate. By means of electron trajectory simulations, this halo effect is explained to originate from single electron, emitted from the carbon foil, hitting the non-active area of the m…

Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone

2016

The atomic layer deposition (ALD) of films with the approximate compositions Mn3(BO3)2 and CoB2O4 is described using MnTp2 or CoTp2 [Tp ¼ tris(pyrazolyl)borate] with ozone. The solid state decomposition temperatures of MnTp2 and CoTp2 are 370 and 340 C, respectively. Preparative-scale sublimations of MnTp2 and CoTp2 at 210 C/0.05 Torr afforded >99% recoveries with <0.1% nonvolatile residues. Self-limited ALD growth was demonstrated at 325 C for MnTp2 or CoTp2 with ozone as the coreactant. The growth rate for the manganese borate process was 0.19 A˚ /cycle within the ALD window of 300–350 C. The growth rate for the cobalt borate process was 0.39–0.42 A˚ /cycle at 325 C. X-ray diffraction of …

Simulations on time-of-flight ERDA spectrometer performance

2016

The performance of a time-of-flight spectrometer consisting of two timing detectors and an ionization chamber energy detector has been studied using Monte Carlo simulations for the recoil creation and ion transport in the sample and detectors. The ionization chamber pulses have been calculated using Shockley-Ramo theorem and the pulse processing of a digitizing data acquisition setup has been modeled. Complete time-of-flight–energy histograms were simulated under realistic experimental conditions. The simulations were used to study instrumentation related effects in coincidence timing and position sensitivity, such as background in time-of-flight–energy histograms. Corresponding measurement…

Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer

2011

Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al2O3 + TiO2 nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements 63Cu, 35Cl, 12C and 4He ions…

Photo-assisted O− and Al− production with a cesium sputter ion source

2021

It has been recently proposed that the production of negative ions with cesium sputter ion sources could be enhanced by laser-assisted resonant ion pair production. We have tested this hypothesis by measuring the effect of pulsed diode lasers at various wavelengths on the O− and Al− beam current produced from Al2O3 cathode of a cesium sputter ion source. The experimental results provide evidence for the existence of a wavelength-dependent photo-assisted enhancement of negative ion currents but cast doubt on its alleged resonant nature as the effect is observed for both O− and Al− ions at laser energies above a certain threshold. The beam current transients observed during the laser pulses s…

Tuning of Emission Wavelength of CaS:Eu by Addition of Oxygen Using Atomic Layer Deposition

2021

| openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP | openaire: EC/H2020/965124/EU//FEMTOCHIP Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the lumines…

Photo-enhanced O−, H− and Br− ion production in caesium sputter negative ion source : no evidence for resonant ion pair production

2022

It has been proposed that the negative ion yield of a caesium sputter ion source could be enhanced by promoting neutral caesium atoms to electronically excited 7p states supporting resonant ion pair production. We have tested this hypothesis by illuminating the cathode of a caesium sputter ion source with an adjustable wavelength laser and measuring its effect on the extracted beam currents of O−, H− and Br− anions. The laser exposure causes the beam currents to increase but the effect is independent of the wavelength in the range of 440-460 nm, which leads us to conclude that there is no evidence for resonant ion pair production. The photon-induced beam current enhancement scales with the …

Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin films

2020

Halide double perovskites have gained significant attention, owing to their composition of low-toxicity elements, stability in air and long charge-carrier lifetimes. However, most double perovskites, including Cs2AgBiBr6, have wide bandgaps, which limits photoconversion efficiencies. The bandgap can be reduced through alloying with Sb3+, but Sb-rich alloys are difficult to synthesize due to the high formation energy of Cs2AgSbBr6, which itself has a wide bandgap. We develop a solution-based route to synthesize phase-pure Cs2Ag(SbxBi1−x)Br6 thin films, with the mixing parameter x continuously varying over the entire composition range. We reveal that the mixed alloys (x between 0.5 and 0.9) d…

Evolution of the microstructure of sputter deposited TaAlON thin films with increasing oxygen partial pressure

2021

Recently, quaternary oxynitrides of transition metals and aluminum have attracted increasing interest due to their tunable properties. Within the present work, a series of TaAl(O)N films was sputter deposited using constant nitrogen and varying oxygen partial pressures. The films were grown from single element Ta and Al targets. The deposition parameters were adjusted to obtain a Ta/Al atomic ratio of ~50/50 for the oxygen-free film and were held constant for the following depositions, with the exception of the increasing oxygen partial pressure and compensatory decreasing argon partial pressure. Elastic recoil detection analysis revealed oxygen contents of up to ~26 at.%, while the nitroge…

Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors

2022

SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…

Depth profiling of Al2O3+ TiO2 nanolaminates by means of a time-of-flight energy spectromete

2011

Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al2O3 + TiO2 nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements 63Cu, 35Cl, 12C and 4He ions…

Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition

2022

Funding Information: This work was carried out within the MECHALD project funded by Business Finland and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (Ref. No. 251220) and Nuclear and Accelerator Based Physics (Ref Nos. 213503 and 251353) of the Academy of Finland. Publisher Copyright: © 2022 Author(s). In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) at relatively low temperatures, post-ALD thermal processing or high device operation temperature might cause performance issues…

Development of a high energy resolution gas ionization detector for a recoil spectrometer

2011