0000000001317745
AUTHOR
Eiji Saitoh
Mechanism of electrical switching of ultra-thin CoO/Pt bilayers
We study current-induced switching of the N\'eel vector in CoO/Pt bilayers to understand the underlaying antiferromagnetic switching mechanism. Surprisingly, we find that for ultra-thin CoO/Pt bilayers electrical pulses along the same path can lead to an increase or decrease of the spin Hall magnetoresistance signal, depending on the current density of the pulse. By comparing the results of these electrical measurements to XMLD-PEEM imaging of the antiferromagnetic domain structure before and after the application of current pulses, we reveal the reorientation of the N\'eel vector in ultra-thin CoO(4 nm). This allows us to determine that even opposite resistance changes can result from a th…
Tunable Sign Change of Spin Hall Magnetoresistance in Pt/NiO/YIG Structures
Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature that increases with the NiO thickness. This is contrary to a conventional SMR theory picture applied to the Pt/YIG bilayer, which always predicts a positive SMR. The negative SMR is found to persist even when NiO blocks the spin transmission between Pt and YIG, indicating it is governed by the spin current response of the NiO layer. We explain the negative SMR by the NiO "spin flop" coupled with YIG, which can be overridden at higher temperature by positive SMR contribution from YIG. This highlights the role of m…
Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching
Comment: 16 pages (manuscript and supplementary), 12 figures
Magnon detection using a ferroic collinear multilayer spin valve
Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y3Fe5O12|CoO|Co, we find that the de…
Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films
Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the N\'eel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the N\'eel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $$ directions. The final state of the N\'eel vector $\textbf{n}$ switching after current pulse…
Origin of the spin Seebeck effect in compensated ferrimagnets
Magnons are the elementary excitations of a magnetically ordered system. In ferromagnets, only a single band of low-energy magnons needs to be considered, but in ferrimagnets the situation is more complex owing to different magnetic sublattices involved. In this case, low lying optical modes exist that can affect the dynamical response. Here we show that the spin Seebeck effect (SSE) is sensitive to the complexities of the magnon spectrum. The SSE is caused by thermally excited spin dynamics that are converted to a voltage by the inverse spin Hall effect at the interface to a heavy metal contact. By investigating the temperature dependence of the SSE in the ferrimagnet gadolinium iron garne…
Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO
We unambiguously identify the origin of the current-induced magnetic switching of insulating antiferromagnet/heavy metal bilayers. Previously, different reorientations of the Neel order for the same current direction were reported for different device geometries and different switching mechanisms were proposed. Here, we combine concurrent electrical readout and optical imaging of the switching of antiferromagnetic domains with simulations of the current-induced temperature and strain gradients. By comparing the switching in specially engineered NiO/Pt device and pulsing geometries, we can rule out spin-orbit torque based mechanisms and identify a thermomagnetoelastic mechanism to dominate t…
Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging.
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
Ferroic collinear multilayer magnon spin valve
Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current driven spintronic devices. The absence of Joule heating as well as the reduced spin wave damping in insulating ferromagnets has been suggested to enable the implementation of efficient logic devices. After the proof of concept for a logic majority gate based on the superposition of spin waves has been successfully demonstrated, further components are required to perform complex logic operations. A key component is a switch that corresponds to a conventional magnetoresistive spin valve. Here, we report on magnetization orientation dependent spin signal d…
Identification of Néel Vector Orientation in Antiferromagnetic Domains Switched by Currents in NiO/Pt Thin Films
Understanding the electrical manipulation of the antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequencies. Focusing on collinear insulating antiferromagnetic $\mathrm{Ni}\mathrm{O}/\mathrm{Pt}$ thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the N\'eel-vector direction changes. We demonstrate electrical switching between different T domains by current pulses, finding that the N\'eel-vector orientation in these domains is along [$\ifmmode\pm\else\textpm\fi{}5$ $\ifmmode\pm\else\textpm\fi{}5$ 19], different compared to the bulk $⟨112⟩$ d…
古典波動現象のトポロジーによる特徴付け; 静磁スピン波表面モードのトポロジカルな起源
We propose a topological characterization of Hamiltonians describing classical waves. Applying it to the magnetostatic surface spin waves that are important in spintronics applications, we settle the speculation over their topological origin. For a class of classical systems that includes spin waves driven by dipole-dipole interactions, we show that the topology is characterized by vortex lines in the Brillouin zone in such a way that the symplectic structure of Hamiltonian mechanics plays an essential role. We define winding numbers around these vortex lines and identify them to be the bulk topological invariants for a class of semimetals. Exploiting the bulk-edge correspondence appropriat…
Anomalous Hall effect driven by dipolar spin waves in uniform ferromagnets
A new type of anomalous Hall effect is shown to arise from the interaction of conduction electrons with dipolar spin waves in ferromagnets. This effect exists even in homogeneous ferromagnets without relativistic spin-orbit coupling. The leading contribution to the Hall conductivity is proportional to the chiral spin correlation of dynamical spin textures and is physically understood in terms of the skew scattering by dipolar magnons.
Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films
We demonstrate stable and reversible current induced switching of large-area ($> 100\;��m^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antifer…
Spin transport in multilayer systems with fully epitaxial NiO thin films
We report the generation and transport of thermal spin currents in fully epitaxial $\ensuremath{\gamma}\text{\ensuremath{-}}\mathrm{F}{\mathrm{e}}_{2}{\mathrm{O}}_{3}/\mathrm{NiO}(001)/\mathrm{Pt}$ and $\mathrm{F}{\mathrm{e}}_{3}{\mathrm{O}}_{4}/\mathrm{NiO}(001)/\mathrm{Pt}$ trilayers. A thermal gradient, perpendicular to the plane of the sample, generates a magnonic spin current in the ferrimagnetic maghemite $(\ensuremath{\gamma}\text{\ensuremath{-}}\mathrm{F}{\mathrm{e}}_{2}{\mathrm{O}}_{3})$ and magnetite $(\mathrm{F}{\mathrm{e}}_{3}{\mathrm{O}}_{4})$ thin films by means of the spin Seebeck effect. The spin current propagates across the epitaxial, antiferromagnetic insulating NiO layer…
Efficient Spin Torques in Antiferromagnetic CoO/Pt Quantified by Comparing Field- and Current-Induced Switching
We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate a current-field equivalence ratio of 4×10^{-11} T A^{-1} m^{2}. The Neel vector final state (n⊥j) is in line with a thermomagnetoelastic switching mechanism for a negative magnetoelastic constant of the CoO.
Direct Imaging of Current-Induced Antiferromagnetic Switching Revealing a Pure Thermomagnetoelastic Switching Mechanism in NiO.
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature induced strain and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch th…
Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films
We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. Th…
Strain-induced Shape Anisotropy in Antiferromagnetic Structures
We demonstrate how shape dependent strain can be used to control antiferromagnetic order in NiO Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can b…
Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe2O3/NiO/Pt epitaxial stacks
We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …
Spin transport across antiferromagnets induced by the spin Seebeck effect
For prospective spintronics devices based on the propagation of pure spin currents, antiferromagnets are an interesting class of materials that potentially entail a number of advantages as compared to ferromagnets. Here, we present a detailed theoretical study of magnonic spin current transport in ferromagnetic-antiferromagnetic multilayers by using atomistic spin dynamics simulations. The relevant length scales of magnonic spin transport in antiferromagnets are determined. We demonstrate the transfer of angular momentum from a ferromagnet into an antiferromagnet due to the excitation of only one magnon branch in the antiferromagnet. As an experimental system, we ascertain the transport acr…
Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe 2 O 3 /NiO/Pt epitaxial stacks
We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …
Data of the article "Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching"
Data for experimental transport measurements and analytical calculations for the article "Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching" (https://arxiv.org/abs/2003.05923)
Data for the article "Magnetic Sensitivity Distribution of Hall Devices in Antiferromagnetic Switching Experiments"
Data for the article "Magnetic Sensitivity Distribution of Hall Devices in Antiferromagnetic Switching Experiments" URL: https://link.aps.org/doi/10.1103/PhysRevApplied.16.064023 DOI: 10.1103/PhysRevApplied.16.064023
Data for the article "Strain-induced shape anisotropy in antiferromagnetic structures"
Data for the article "Strain-induced shape anisotropy in antiferromagnetic structures" URL: https://link.aps.org/doi/10.1103/PhysRevB.106.094430 DOI: 10.1103/PhysRevB.106.094430
Data for the article "Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films"
Data for experimental transport measurements and optical imaging for the article "Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films" (https://arxiv.org/abs/2004.13374).