6533b7ddfe1ef96bd127491c
RESEARCH PRODUCT
Terahertz electrical writing speed in an antiferromagnetic memory
Peter WadleyJairo SinovaJairo SinovaK. OlejníkZdeněk KašparZdeněk KašparR. P. CampionVít NovákTom SeifertTomas JungwirthTomas JungwirthPetr KuželManuel BaumgartnerMelanie MüllerTobias KampfrathTobias KampfrathPetr NěmecJoerg WunderlichJoerg WunderlichPietro Gambardellasubject
Terahertz radiationPhysics::Optics02 engineering and technologyHardware_PERFORMANCEANDRELIABILITY01 natural sciences530Computer Science::Hardware ArchitectureHertz0103 physical sciencesHardware_INTEGRATEDCIRCUITSAntiferromagnetismAtomic lattice010306 general physicsResearch ArticlesSpin-½PhysicsMultidisciplinarybusiness.industrySciAdv r-articles021001 nanoscience & nanotechnologyelectrical writingFerromagnetismApplied Sciences and Engineeringwriting speedComputer ScienceOptoelectronicsCondensed Matter::Strongly Correlated Electronsantiferromagnetic memory0210 nano-technologybusinessRealization (systems)Research Articledescription
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-03-02 | Science Advances |