6533b856fe1ef96bd12b28fc
RESEARCH PRODUCT
Soft errors in commercial off-the-shelf static random access memories
Frédéric WrobelFrédéric WrobelLuigi DililloGeorgios TsiligiannisFrédéric SaignéGuptaAlexandre Louis BosserAlexandre Louis Bossersubject
ImaginationDynamic test modeComputer sciencemedia_common.quotation_subject01 natural sciencesParticle detector[SPI]Engineering Sciences [physics]0103 physical sciencesMaterials ChemistryElectronic engineeringStatic random-access memoryElectrical and Electronic EngineeringLayer (object-oriented design)Ionizing Particlesmedia_common010302 applied physics[PHYS]Physics [physics]010308 nuclear & particles physicsDetectorCondensed Matter PhysicsSRAMBit mappingElectronic Optical and Magnetic MaterialsStatic test modeMarch testParticle detectorCommercial off-the-shelfRandom accessDynamic testingdescription
International audience; This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on static random access memory (SRAM). We detailed irradiation test techniques and results from irradiation experiments with several types of particles. Two commercial SRAMs, in 90 and 65 nm technology nodes, were considered as case studies. Besides the basic static and dynamic test modes, advanced stimuli for the irradiation tests were introduced, as well as statistical post-processing techniques allowing for deeper analysis of the correlations between bit-flip cross-sections and design/architectural characteristics of the memory device. Further insight is provided on the response of irradiated stacked layer devices and on the use of characterized SRAM devices as particle detectors.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-12-01 |