Search results for " Irradiation"
showing 10 items of 314 documents
Detection of Interstitial Oxygen Molecules in SiO2Glass by a Direct Photoexcitation of the Infrared Luminescence of SingletO2
1996
The presence of interstitial oxygen molecules in glassy ${\mathrm{SiO}}_{2}$ has been demonstrated directly by 1064.1 nm $({\ensuremath{\nu}}^{\ensuremath{'}\ensuremath{'}}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0)\ensuremath{\rightarrow}({\ensuremath{\nu}}^{\ensuremath{'}}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1)$ excitation of the forbidden ${O}_{2}$ molecule $^{1}\ensuremath{\Delta}_{g}({\ensuremath{\nu}}^{\ensuremath{'}}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0)\ensuremath{\rightarrow}^{3}\ensuremath{\Sigma}_{g}({\ensuremath{\nu}}^{\ensuremath{'}\ensuremath{'}}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0)$ luminescence transition at 1272 nm in S…
Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
2008
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.
Dangerous effects induced on power MOSFETs by terrestrial neutrons: A theoretical study and an empirical approach based on accelerated experimental a…
2013
This paper investigates the effects that terrestrial neutrons can induce on power MOSFETs when they are biased during their normal working conditions especially in inverters for photovoltaic applications. After a brief review of power MOSFETs failure phenomena caused by neutron irradiation (with emphasis on so called “Single Event Effects” (SEE)), the results of an accelerated test performed with the Am-Be source at the University of Palermo are discussed.
Upgrades for the RADEF Facility
2007
RADEF includes heavy ion and proton beam lines for irradiation of space electronics. A special beam cocktail for back side irradiations has been developed. Also, experimental LET values of its two heaviest ions have been determined.
Preliminary radiation hardness tests of single photon Si detectors
2010
Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…
High performance 3D CZT spectro-imager for BNCT-SPECT: preliminary characterization
2018
The National Institute of Nuclear Physics (INFN) is supporting the 3CaTS project with the aim of developing a new Single Photon Emission Computed Tomography (SPECT) system for real time 10 B therapeutic dose monitoring in the binary experimental hadron therapy called Boron Neutron Capture Therapy (BNCT). BNCT is a highly selective tumour treatment based on the neutron capture reaction 10 B(n,α) 7 Li. The secondary particles have a high LET with ranges in tissues of the order of 10 μm (thus less than the mean cell diameter of few tens μm). Targeting the 10 B delivery towards cancer, the released energy lethally damages only the malignant cells sparing the normal tissues, thus enabling a cell…
Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM
2012
16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.
SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation
2011
The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.
Studies on Instabilities and Patterns in Evaporating Liquids at Reduced Pressure and/or Microwave Irradiation
1990
This paper summarizes our recent experimental and theoretical work on the instabilities in liquids and at interfaces which form during evaporation at reduced pressure and/or microwave irradiation. We have observed a variety of patterns (Benard rolls, Marangoni waves, Hickman interface deformations) which depend on the value of the reduced pressure and the power of the incident beam.
MICROWAVE EFFECTS ON ACETYLCHOLINE-INDUCED CHANNELS IN CULTURED CHICK MYOTUBES
1988
The behavior of cultured myotubes from chick embryos exposed to microwaves has been experimentally analyzed. Recordings of acetylcholine-induced currents have been obtained via patch-clamp techniques using both cell-attached (single-channel current recording) and whole-cell (total current recording) configurations. During the exposure to low-power microwaves the frequency of the ACh-activated single channel openings decreased, while the ACh-induced total current showed a faster falling phase. Channel open time and conductance were not affected by microwave irradiation. It is concluded that the exposure to microwaves increases the rate of desensitization and decreases the channel opening pro…