Search results for " Laser deposition"
showing 10 items of 78 documents
Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition
2019
Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibi…
Fabrication of superconducting tantalum nitride thin films using infra-red pulsed laser deposition
2013
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on oxidized silicon (SiO$_{2} $) substrates exhibited a superconducting transition temperature of $\sim $ 8 K and 6 K, respectively. The topography of these films were investigated using atomic force and scanning electron microscopy, revealing fairly large area particulate free and smooth surfaces, while the structure of the films were investigated using standard $ \theta -2 \theta $ and glancing angle X-ray diffraction techniques. For films grown on MgO a fa…
WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
2020
International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D…
In situ monitoring of pulsed laser indium–tin-oxide film deposition by optical emission spectroscopy
2001
We performed optical emission spectroscopy to monitor the plasma produced during the ablation of indium-tin-oxide targets under different oxygen pressure conditions using a pulsed UV laser. Molecular bands of InO were identified in the fluorescent spectra produced by pulsed laser ablation. InO line monitoring allowed obtaining the optimal conditions for good-quality ITO film deposition. We demonstrated that it is possible to correlate InO line spectroscopic parameters with the conditions required to fabricate a high-conductivity and high-transparent ITO thin film. In particular, low resistivity (10-4 to 10-3 Ω cm) was obtained in films deposited at room temperature by regulating oxygen pres…
NEUTRON IRRADIATION EFFECTS IN PZ and PZT THIN FILMS
2005
ABSTRACT Neutron irradiation effects on highly oriented antiferroelectric PbZrO3 (PZ) and ferroelectric PbZr0.53Ti0.47O3 (PZT) thin films are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for fusion devices like ITER. All investigated thin films were prepared by a sol-gel technique and by pulsed laser deposition (PLD) respectively. The dielectric properties were investigated in a frequency range from 1 to 250 kHz and at temperatures up to 400°C, prior to and after irradiation to a neutron fluence of 3 * 1022 m−2 (E > 0.1 MeV). After irradiation, the films were anneald in several steps up to 400°C in order to remove the radiat…
Transparent amorphous memory cell: A bipolar resistive switching in ZnO/Pr0.7Ca0.3MnO3/ITO for invisible electronics application
2014
Abstract ZnO/Pr0.7Ca0.3MnO3 (ZnO/PCMO) amorphous thin films were grown on an indium-tin-oxide (ITO)/glass by pulsed laser deposition at room temperature. Interestingly, a stable bipolar resistive switching behavior of the ITO/ZnO/PCMO/ITO cell can be longer than 2.5 × 103 cycles. The on/off ratio of switching behaviors is as high as 104. The structure of ITO/ZnO/PCMO/ITO exhibits a high average transparency of 79.6% in the visible range with a maximum transparency of 84.6% at 590 nm wavelength. The conductive mechanism during switching cycling in our structure can be described by a trapped-control space charge limited current behavior. The ZnO/PCMO/ITO/glass structure shows a potential of t…
Radiation-induced defects in antiferroelectric thin films
2003
Abstract Radiation effects on highly oriented antiferroelectric (AFE) PbZrO3 (PZ) films with a thickness of approximately 400 nm are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for fusion devices like ITER. The films were prepared by pulsed laser deposition (PLD). The dielectric constant was measured in the frequency range from 1 to 250 kHz in a stepwise cooling mode (∼2 °C min−1) from 400 °C to room temperature before and after irradiation to a fast neutron fluence of 2×1022 m−2 (E>0.1 MeV). After irradiation, the films were annealed in several steps up to ∼400 °C to remove the radiation-induced defects. The results are di…
Raman measurements on GaN thin films for PV - purposes
2012
Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman mod…
ITO top-electrodes via industrial-scale PLD for efficient buffer-layer-free semitransparent perovskite solar cells
2022
The deposition of transparent conductive oxides (TCO) usually employs harsh conditions that are frequently harmful to soft/organic underlayers. Herein, successful use of an industrial pulsed laser deposition (PLD) tool to directly deposit indium tin oxide (ITO) films on semitransparent vacuum-deposited perovskite solar cells without damage to the device stack is demonstrated. The morphological, electronic, and optical properties of the PLD deposited ITO films are optimized. A direct relation between the PLD chamber pressure and the solar cell performance is obtained. The semitransparent perovskite solar cells prepared exclusively by vacuum-assisted techniques had fill factors of 78% and exc…
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC
2022
In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H-SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1019 cm−3). After assessing the excellent thickness uniformity (≈3L-MoS2) and conformal coverage of the PLD-grown films by Raman mapping and transmission electron microscopy, the current injection across the heterojunctions is investigated by temperature-dependent current–voltage characterization of the diodes and by nanoscale current mapping with conductive atomic force microscopy. A wide tunability of the transport properties is shown by the SiC surface dopi…