Search results for " SCA"
showing 10 items of 11363 documents
Evaluation of Vertical Fatigue Cracks by Means of Flying Laser Thermography
2019
The present paper proposes a new procedure to analyze the temperature field distribution during Flying Laser Spot and Laser Line Thermographic scanning (FLST, FLLT) of metallic components, in order to detect vertical surface cracks. The methodology exploits the changes in the temperature field produced by a vertical crack, acting as a barrier towards heat diffusion, when the laser approaches the defect. A number of small regions of interests (ROIs) is placed nearby and around the laser source. The average temperature from each ROI is then monitored during the laser scanning. Vertical cracks can be detected by analyzing and comparing the temperature fluctuations from each ROI when the laser …
Raman characterization of Pb2Na1−xLaxNb5−xFexO15 and Pb0.5(5−x)LaxNb5−xFexO15 (0≤x≤1) solid solutions
2011
Abstract The ferroelectric compounds Pb 2 Na 1− x La x Nb 5− x Fe x O 15 and Pb 0.5(5− x ) La x Nb 5− x Fe x O 15 (0≤ x ≤1) with the tungsten bronze type structure have been investigated using Raman spectroscopy. The evolution of the spectra as a function of composition at room temperature is reported. In the frequency range 200–1000 cm −1 three main A 1 phonons around 240 ( υ 1 ), 630 ( υ 2 ) and 816 ( υ 3 ) cm −1 were observed. The broadening of the Raman lines for high values of x originates from a significant structural disorder. This is in good agreement with the relaxor character of these compositions. The lowest-frequency part of the spectra, below 180 cm −1 , reveals a structural ch…
Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry
2006
The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5–30 nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25 nm thick NiSi films and atomic layer deposited 6 nm thick HfxSiyOz f…
Lattice sites of diffused gold and platinum in epitaxial ZnSe layers
2000
Abstract The lattice location of diffused gold and platinum in zinc selenide (ZnSe) epitaxial layers was studied using the Rutherford backscattering (RBS) channeling technique. Thin Au and Pt films were evaporated onto ZnSe samples. The Au/ZnSe samples were annealed at 525°C and the residual Au film was removed by etching. Channeling angular scan measurements showed that about 30% of Au atoms were close to substitutional site (displaced about 0.2 A). In the case of the Pt/ZnSe samples the annealing temperatures ranged from 600°C to 800°C. The Pt minimum yields along 〈1 0 0〉 direction were close to the random value, varying from 80% to 90%. The measured Pt angular scans along 〈1 0 0〉 and 〈1 …
Dielectric, thermal and Raman spectroscopy studies of lead-free (Na0.5Bi0.5)1−xSrxTiO3 (x = 0, 0.04 and 0.06) ceramics
2016
ABSTRACTLead-free (Na0.5Bi0.5)1−xSrxTiO3 (x = 0, 0.04 and 0.06) ceramics with relative densities above 97% were prepared by solid-state synthesis process. Their dielectric, thermal and Raman properties were studied. X-ray diffraction analysis shows perovskite structure with rhombohedral symmetry at room temperature. Sr doping of Na0.5Bi0.5TiO3 (NBT) results in an increase of the dielectric permittivity, diffusing of the permittivity maximum and its shift toward lower temperatures. The temperature of the rhombohedral–tetragonal phase transition indicated by the differential scanning calorimetry (DSC) peak and relaxational dielectric anomaly near the depolarization temperature are also shifte…
Switching by Domain-Wall Automotion in Asymmetric Ferromagnetic Rings
2017
A ring-shaped magnetic logic device offers two vortex states (clockwise and counterclockwise) to encode bits, with relative stability against external magnetic fields. The dynamics of magnetization switching in such structures, though, still need unraveling. The authors present direct experimental visualization of reproducible, robust switching in magnetic rings via domain-wall automotion, which does not require an applied field. Simulations reveal that annihilation of domain walls through automotion always occurs, with the detailed topology of the walls only influencing the dynamics locally, in line with the experimental results.
Multiscale model approach for magnetization dynamics simulations
2016
Simulations of magnetization dynamics in a multiscale environment enable the rapid evaluation of the Landau-Lifshitz-Gilbert equation in a mesoscopic sample with nanoscopic accuracy in areas where such accuracy is required. We have developed a multiscale magnetization dynamics simulation approach that can be applied to large systems with spin structures that vary locally on small length scales. To implement this, the conventional micromagnetic simulation framework has been expanded to include a multiscale solving routine. The software selectively simulates different regions of a ferromagnetic sample according to the spin structures located within in order to employ a suitable discretization…
Nanoscale Etching of GaAs and InP in Acidic H<sub>2</sub>O<sub>2</sub> Solution: A Striking Contrast in Kinetics and Surface …
2018
In this study of nanoscale etching for state-of-the-art device technology the importance of the nature of the surface oxide, is demonstrated for two III-V materials. Etching kinetics for GaAs and InP in acidic solutions of hydrogen peroxide are strikingly different. GaAs etches much faster, while the dependence of the etch rate on the H+ concentration differs markedly for the two semiconductors. Surface analysis techniques provided information on the surface composition after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin stoichiometric oxide that forms a blocking layer on InP. Reaction schemes are provided that allow one to understand the results, in particular…
Deposition of binder-free oxygen-vacancies NiCo2O4 based films with hollow microspheres via solution precursor thermal spray for supercapacitors
2019
Abstract Hollow micro-/nanostructures and oxygen vacancies are highly desirable for supercapacitors due to high active surface area and outstanding electrochemical properties. In order to benefiting from the both effect, binder-free oxygen-vacancies NiCo2O4 based films with hollow microspheres were pioneering directly deposited via one kind thermal spray technology, named solution precursor thermal spray (SPTS) process. To our best knowledge, the rapid one-step SPTS route was firstly employed to synthesize and deposit NiCo2O4 films for supercapacitor applications. The CV data clearly demonstrated that the specific capacitances of more oxygen-deficient NiCo2O4 electrodes with hollow microsph…
Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe
2011
Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibi…