Search results for " barrier"

Emprendimiento en personas con discapacidad. Un diagnóstico a través de la técnica de grupo nominal

2018

The aim of this work is to identify the dimensions and aspects that foster and / or restrict the entrepreneurial action of disabled people from a qualitative methodological perspective. The analysis was carried out by means of the nominal group technique. As a result of the analysis, this work proposes, through the work done with disabled people, a set of interventions that will reduce barriers and foster the entrepreneurship of such vulnerable group

The Amorphous Semiconductor Schottky Barrier Approach to Study the Electronic Properties of Anodic Films on Ti

2017

A detailed study of the electronic properties of thin (>20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and, more specifically, the density of electronic states (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behavior of a-SC Schottky barrier.

Microstructure Design for Fast Lifetime Measurements of Magnetic Tunneling Junctions

2019

The estimation of the reliability of magnetic field sensors against failure is a critical point concerning their application for industrial purposes. Due to the physical stochastic nature of the failure events, this can only be done by means of a statistical approach which is extremely time consuming and prevents a continuous observation of the production. Here, we present a novel microstructure design for a parallel measurement of the lifetime characteristics of a sensor population. By making use of two alternative designs and the Weibull statistical distribution function, we are able to measure the lifetime characteristics of a CoFeB/MgO/CoFeB tunneling junction population. The main param…

Amorphous semiconductor—electrolyte junction. Energetics at the a-WO3—electrolyte junction

1991

In order to elucidate the influence of thickness and amorphous structure on the kinetics of electron exchange with redox couples in solution, a critical re-examination of the energetics at the amorphous anodic WO3 films (a-WO3)—electrolyte junction has been performed, based on a recent theory of amorphous semiconductor (a-SC) Schottky barrier. The admittance study of the barrier performed in a large interval of electrode potential at changing frequency and film thickness allowed the determination of the energy levels as well as the distribution of localized electronic states within the mobility gap of the films. The new energetic picture derived is able to explain some features of the kinet…

Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques

2007

Abstract Thin Nb2O5 anodic films (∼20 nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported.

The toxic effect of monodisperse amorphous silica particles studied on an in vitro model of the human air–blood barrier

2009

Influence of Anodic and Thermal Barrier Layers on Physicochemical Behavior of Anodic TiO2 Nanotubes

2011

Electrochemical and photo-electrochemical behavior of self-organized TiO2 nanotubes formed in organic solvents have been studied by taking into account the formation of new barrier layers beneath nanotubes either due to the anodic polarization in aqueous solutions or air exposure during high temperature annealing. It has been shown that before annealing, electrochemical and photoelectrochemical answers are dominantly controlled by the physicochemical properties of the anodic barrier layer. Annealing in air at sufficiently high temperatures changes the initial amorphous structure of as-prepared nanotubes and forms a new oxide layer below them due to thermal oxidation of underneath titanium. …

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

2016

The transfer characteristics (ID-VG) of multilayers MoS2 transistors with a SiO2/Si backgate and Ni source/drain contacts have been measured on as-prepared devices and after annealing at different temperatures (T-ann from 150 degrees C to 200 degrees C) under a positive bias ramp (V-G from 0 V to + 20 V). Larger T-ann resulted in a reduced hysteresis of the ID-VG curves (from similar to 11 V in the as-prepared sample to similar to 2.5 V after Tann at 200 degrees C). The field effect mobility (similar to 30 cm(2) V-1 s(-1)) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n-type behaviour in the as-prepared device to the…

Relative Humidity Dependent Resistance Switching of Bi2S3Nanowires

2017

Electrical properties of Bi2S3nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

ePTFE ‐based biomedical devices: An overview of surgical efficiency

2021

International audience; Polytetrafluoroethylene (PTFE) is a ubiquitous material used for implants and medical devices in general because of its high biocompatibility and inertness: blood vessel, heart, table jawbone, nose, eyes, or abdominal wall can benefit from its properties in case of disease or injury. Its expanded version, ePTFE is an improved version of PTFE with better mechanical properties, which extends its medical applications. A material as frequently used as ePTFE with these exceptional properties deserves a review of its main uses, developments, and possibility of improvements. In this systematic review, we examined clinical trials related to ePTFE-based medical devices from t…