Search results for "A2"

showing 10 items of 1101 documents

Normalities and Commutators

2010

We first compare several algebraic notions of normality, from a categorical viewpoint. Then we introduce an intrinsic description of Higgins' commutator for ideal-determined categories, and we define a new notion of normality in terms of this commutator. Our main result is to extend to any semi-abelian category the following well-known characterization of normal subgroups: a subobject K is normal in A if. and only if, {[A, K] <= K. (C) 2010 Elsevier Inc. All rights reserved.}

Normal subgroupPure mathematicsmedia_common.quotation_subjectCharacterization (mathematics)law.inventionSemi-abelianNormal subobjectlawCommutatorMathematics::Category TheorySubobjectFOS: MathematicsIdeal (order theory)Category Theory (math.CT)Algebraic numberCategorical variableNormalityMathematicsmedia_commonDiscrete mathematicsAlgebra and Number TheoryCommutator (electric)Mathematics - Category TheoryIdealSettore MAT/02 - Algebra08A30 18A20 08A50
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Large two-dimensional electronic systems: Self-consistent energies and densities at low cost

2013

We derive a self-consistent local variant of the Thomas-Fermi approximation for (quasi-) two-dimensional (2D) systems by localizing the Hartree term. The scheme results in an explicit orbital-free representation of the electron density and energy in terms of the external potential, the number of electrons, and the chemical potential determined upon normalization. We test the method over a variety 2D nanostructures by comparing to the Kohn-Sham 2D local-density approximation (LDA) calculations up to 600 electrons. Accurate results are obtained in view of the negligible computational cost. We also assess a local upper bound for the Hartree energy. Peer reviewed

Normalization (statistics)Electron densityThomas-Fermi approximationta221educationFOS: Physical sciencesquantum dotsElectron114 Physical sciencesUpper and lower boundsCondensed Matter - Strongly Correlated ElectronsQuantum mechanicsMesoscale and Nanoscale Physics (cond-mat.mes-hall)Electronic systemsta218density functional theoryPhysicsta214ta114Condensed Matter - Mesoscale and Nanoscale PhysicsStrongly Correlated Electrons (cond-mat.str-el)HartreeCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsComputational physicsorbital free functionalQuantum dotDensity functional theory
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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

2018

International audience; This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

Nuclear and High Energy PhysicsComputer sciencekäyttömuistit02 engineering and technologysingle-event effect01 natural sciencesMemory arrayElectronic mailX-ray0103 physical sciencesElectronic engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsElectrical and Electronic Engineeringstatic testComputingMilieux_MISCELLANEOUSdynamic testEvent (probability theory)Random access memoryta114ta213010308 nuclear & particles physicsbusiness.industrySEFImuistit (tietotekniikka)021001 nanoscience & nanotechnologyFerroelectricityheavy ionsingle-event upsetNon-volatile memoryFRAMsäteilyfysiikkaNuclear Energy and EngineeringSingle event upsetPhotonics0210 nano-technologybusinessIEEE Transactions on Nuclear Science
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Methodologies for the Statistical Analysis of Memory Response to Radiation

2016

International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.

Nuclear and High Energy PhysicsEngineeringHardware_PERFORMANCEANDRELIABILITYRadiation[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesstatistical analysis0103 physical sciencesStatic testingElectronic engineeringmemory responseStatistical analysisSensitivity (control systems)Static random-access memoryElectrical and Electronic Engineeringstatic testCluster of bit-flipsdynamic test010302 applied physicsSingle event upset SEURandom access memoryta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)säteilySRAMReliability engineeringradiationNuclear Energy and EngineeringSingle event upsetradiation effectsbusiness[MATH.MATH-NA]Mathematics [math]/Numerical Analysis [math.NA]Dynamic testing
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Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs

2015

International audience; Various failure scenarios may occur during irradiation testing of SRAMs, which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them.

Nuclear and High Energy PhysicsEngineeringcomputer.software_genreUpsetCross section (physics)Static testingCluster of bit flipsStatic random-access memoryElectrical and Electronic Engineeringradiation testingstatic testCluster analysisdynamic test[PHYS]Physics [physics]single event upset (SEU)ta213ta114Cross sectionbusiness.industrySEFImultiple cell upset (MCU)SRAM[SPI.TRON]Engineering Sciences [physics]/ElectronicsRAMRadiation testingMicrocontrollerMCUNuclear Energy and EngineeringSEU clusterData miningbusinesscomputerDynamic testing
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Improved EDGE2D-EIRENE simulations of JET ITER-like wall L-mode discharges utilising poloidal VUV/visible spectral emission profiles

2015

A discrepancy in the divertor radiated powers between EDGE2D-EIRENE simulations, both with and without drifts, and JET-ILW experiments employing a set of NBI-heated L-mode discharges with step-wise density variation is investigated. Results from a VUV/visible poloidally scanning spectrometer are used together with bolometric measurements to determine the radiated power and its composition. The analysis shows the importance of D line radiation in contributing to the divertor radiated power, while contributions from D radiative recombination are smaller than expected. Simulations with W divertor plates underestimate the Be content in the divertor, since no allowance is made for Be previously …

Nuclear and High Energy PhysicsJet (fluid)ta214TokamakMaterials scienceta114SpectrometerDivertorta221BolometerEffective radiated power01 natural sciences010305 fluids & plasmaslaw.inventionNuclear Energy and EngineeringlawSputtering0103 physical sciencesGeneral Materials ScienceSpontaneous emissiontokamaksAtomic physics010306 general physicsta218Journal of Nuclear Materials
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Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence

2017

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed

Nuclear and High Energy PhysicsMaterials scienceAnnealing (metallurgy)Schottky barrierschottky diodes01 natural sciencesFluenceIonpower semiconductor deviceschemistry.chemical_compoundsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsElectrical and Electronic EngineeringLeakage (electronics)Diode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodemodelingNuclear Energy and EngineeringchemistryOptoelectronicsbusinession radiation effectsIEEE Transactions on Nuclear Science
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MeV ion beam lithography of biocompatible halogenated Parylenes using aperture masks

2015

Parylenes are poly(p-xylylene) polymers that are widely used as moisture barriers and in biomedicine because of their good biocompatibility. We have investigated MeV ion beam lithography using 16O+ ions for writing defined patterns in Parylene-C, which is evaluated as a coating material for the Cochlear Implant (CI) electrode array, a neuroprosthesis to treat some forms of deafness. Parylene-C and -F on silicon and glass substrates as well as 50 μm thick PTFE were irradiated to different fluences (1×1013-1×10161×1013-1×1016 1 MeV 16O+ ions cm−2) through aperture masks under high vacuum and a low pressure (&lt;10−3 mbar) oxygen atmosphere. Biocompatibility of the irradiated and unirradiated …

Nuclear and High Energy PhysicsMaterials scienceBiocompatibilitySiliconParylene-CUltra-high vacuumchemistry.chemical_elementParylene-FNanotechnologyengineering.materialIon beam lithographyIonchemistry.chemical_compoundCoatingParyleneIrradiation610 Medicine &amp; healthInstrumentationta217ta114business.industryMurine spiral ganglion cellsMeV ion beam lithographyddc:616.8chemistryengineeringOptoelectronicsBiocompatibilitybusiness
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Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

2018

Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…

Nuclear and High Energy PhysicsMaterials scienceInsulator (electricity)Dielectrickondensaattorit01 natural sciencesmetal–insulator–semiconductor (MIS) deviceslaw.inventionelektroniikkakomponentitchemistry.chemical_compoundlaw0103 physical sciencesBreakdown voltageElectrical and Electronic EngineeringMetal–insulator–metal (MIM) devicessingle event effects (SEEs)ta114ta213010308 nuclear & particles physicsbusiness.industryAmplifierMicrobeamsingle event gate ruptureCapacitorNuclear Energy and EngineeringSilicon nitridechemistrysäteilyfysiikkaElectrodeOptoelectronicsbusinessIEEE Transactions on Nuclear Science
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Comparison of LIBS results on ITER-relevant samples obtained by nanosecond and picosecond lasers

2019

This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement number 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. Work performed under EUROfusion WP PFC.

Nuclear and High Energy PhysicsMaterials scienceMaterials Science (miscellaneous)chemistry.chemical_element01 natural sciences010305 fluids & plasmaslaw.inventionPulsed laser depositionsymbols.namesakeLIBS diagnosticslaw0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Temperature of laser-produced plasmaLaser-induced breakdown spectroscopyta216010302 applied physicsArgonta114Pulse durationNanosecondLaserlcsh:TK9001-9401Nuclear Energy and EngineeringchemistryStark effectPicosecondITER-relevant coatingssymbolslcsh:Nuclear engineering. Atomic powerDetection of hydrogen isotopesElemental depth profilesAtomic physicsNuclear Materials and Energy
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