Search results for "Applied Physics"
showing 10 items of 1226 documents
On the high-pressure phase stability and elastic properties ofβ-titanium alloys
2017
We have studied the compressibility and stability of different β-titanium alloys at high pressure, including binary Ti–Mo, Ti–24Nb–4Zr–8Sn (Ti2448) and Ti–36Nb–2Ta–0.3O (gum metal). We observed stability of the β phase in these alloys to 40 GPa, well into the ω phase region in the P–T diagram of pure titanium. Gum metal was pressurised above 70 GPa and forms a phase with a crystal structure similar to the η phase of pure Ti. The bulk moduli determined for the different alloys range from 97 ± 3 GPa (Ti2448) to 124 ± 6 GPa (Ti–16.8Mo–0.13O).
Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon
2016
The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus, the bases for critical load evaluation were established and the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined in this paper as LCSi1, LCSi2, LCALD1, and LCALD2, representing the failure points of the silicon substrate and the coating delamination points of the ALD coating. The adhesion performance of the ALD Al2O3, TiO2, TiN, and TaCN+Ru coatings with a thickness range between 20 and 600 nm and dep…
VUV emission spectroscopy combined with H- density measurements in the ion source Prometheus I
2016
“Prometheus I” is a volume H− negative ion source, driven by a network of dipolar electron cyclotron resonance (ECR; 2.45 GHz) modules. The vacuum-ultraviolet (VUV) emission spectrum of low-temperature hydrogen plasmas may be related to molecular and atomic processes involved directly or indirectly in the production of negative ions. In this work, VUV spectroscopy has been performed in the above source, Prometheus I, both in the ECR zones and the bulk (far from ECR zones and surfaces) plasma. The acquired VUV spectra are correlated with the negative ion densities, as measured by means of laser photodetachment, and the possible mechanisms of negative ion production are considered. The well-e…
Effects of pyrolysis temperature on the hydrologically relevant porosity of willow biochar
2018
Biochar pore space consists of porosity of multiple length scales. In direct water holding applications like water storage for plant water uptake, the main interest is in micrometre-range porosity since these pores are able to store water that is easily available for plants. Gas adsorption measurements which are commonly used to characterize the physical pore structure of biochars are not able to quantify this pore-size range. While pyrogenetic porosity (i.e. pores formed during pyrolysis process) tends to increase with elevated process temperature, it is uncertain whether this change affects the pore space capable to store plant available water. In this study, we characterized biochar poro…
Effect of Hot Dip Galvanized Steel Surface Chemistry and Morphology on Titanium Hexafluoride Pretreatment
2017
Titanium hexafluoride pretreatments are known to improve paint adhesion and function as a barrier between the coating and the hot dip galvanized (HDG) steel surface. Interactions at the zinc/pretreatment interface are of utmost importance for the formation of pretreatment layers and the corrosion resistance of color coated hot dip galvanized steels. Removal rate of inert aluminum oxide from HDG steel samples by chemical dissolution was studied. XPS measurements showed that the surface Al2O3 layer thickness decreased rapidly already at mild alkaline cleaning, while complete removal of Al required severe etching. Low reactivity of an Al2O3-rich surface was confirmed by impaired formation of a…
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells
2017
Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size. peerReviewed
Strongly Coupled Coherent Phonons in Single-Layer MoS 2
2019
We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by…
Review article: recommended reading list of early publications on atomic layer deposition - outcome of the "virtual Project on the History of ALD"
2017
Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual proj…
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes
2016
Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed
Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
2020
The suitability of Ti as a band gap modifier for &alpha