Search results for "Arsenide"

showing 10 items of 45 documents

Supramolecular Order of Solution-Processed Perylenediimide Thin Films

2011

N,N ′ -1 H ,1 H -perfl uorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2 ), a soluble and air stable n-type molecule, undergoes signifi cant reorganization upon thermal annealing after solution deposition on several substrates with different surface energies. Interestingly, this system exhibits an exceptional edge-on orientation regardless of the substrate chemistry. This preferential orientation is rationalized in terms of strong intermolecular interactions between the PDIF-CN 2 molecules. The presence of a pronounced π– π stacking is confi rmed by combining near-edge X-ray absorption fi ne structure spectroscopy (NEXAFS), dynamic scanning force microscopy (SFM) and surface energy measure…

Materials scienceSupramolecular chemistryAnalytical chemistryStackingSEMICONDUCTORSsolution processesSCALING BEHAVIORBiomaterialsACTIVE LAYERSElectrochemistryCHARGE-TRANSPORTThin filmn-Type semiconductorcharge injectionIntermolecular forcesupramolecular electronicsThin FilmCondensed Matter Physicsorganic transistorsXANESSurface energyElectronic Optical and Magnetic MaterialsChemical physicsMOBILITYGROWTHMORPHOLOGYSupramolecular electronicsAbsorption (chemistry)FIELD-EFFECT TRANSISTORSCONJUGATED POLYMERSGALLIUM-ARSENIDEAdvanced Functional Materials
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Different strategies towards the deterministic coupling of a single Quantum Dot to a photonic crystal cavity mode

2011

In this work we show two different procedures of fabrication aiming towards the systematic positioning of single InAs quantum dots (QDs) coupled to a GaAs photonic crystal (PC) microcavity. The two approaches are based on the molecular beam epitaxial (MBE) growth of site-controlled QDs (SCQDs) on pre-patterned structures. The PC microcavity (PCM) is introduced previous or after the growth, on each case. We demonstrate the InAs SCQD nucleation on pre-patterned PCMs and a method to perform the QD nucleation respect to an etched ruler that is used to position the PC structure after growth. For both types of structures, we have carried out microphotoluminescence (µPL) spectroscopy experiments a…

Materials sciencebusiness.industryCavity quantum electrodynamicsNucleationGallium arsenidechemistry.chemical_compoundchemistryQuantum dotOptoelectronicsPhotonicsbusinessMolecular beamMolecular beam epitaxyPhotonic crystal2011 13th International Conference on Transparent Optical Networks
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DC and 1/f noise characterization of cryogenically cooled pseudomorphic HEMT's

2002

Pseudomorphic (AlGaAs/InGaAs/GaAs) HEMT's have exhibited the best noise performance over the entire LF-to-microwave frequency range if compared to MESFET's and conventional GaAs HEMT's, due to either a reduced flicker noise, a lower G/R contribution and a smaller high-field diffusion noise. We have recently investigated the microwave (up to 18 GHz) noise properties of packaged pseudomorphic HEMT's from 290 K down to cryogenic temperature values. The current experimental work is aimed at extending such analysis to the LF noise range and at low temperatures. Cryogenic noise spectra (1 Hz to 100 KHz) and DC characteristics have therefore been recorded and the relevant observations on the devic…

Materials sciencebusiness.industryNoise reductionAstrophysics::Instrumentation and Methods for AstrophysicsGeneral Physics and AstronomyHigh-electron-mobility transistorNoise figureGallium arsenideCondensed Matter::Materials Sciencechemistry.chemical_compoundGeneration–recombination noisechemistryOptoelectronicsFlicker noiseMESFETbusinessNoise (radio)
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Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

2011

3 figuras, 3 páginas.

Molecular beam epitaxial growthPhotoluminescenceMaterials sciencePhotonIII-V semiconductorsPhysics and Astronomy (miscellaneous)ExcitonInAs/GaAs Quantum DotsPhysics::OpticsSemiconductor growthEpitaxyNanofabricationGallium arsenidechemistry.chemical_compoundCondensed Matter::Materials ScienceAtomic force microscopyGallium arsenideIndium compoundsSemiconductor quantum dotsPhotoluminescencebusiness.industryNanostructured materialsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectNanolithographychemistryQuantum dotOptoelectronicsExcitonsbusinessTelecommunicationsMolecular beam epitaxy
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Noise Enhanced Stability Phenomenon in Electron Spin Dynamics

2012

Possible utilization of the electron spin as an information carrier in electronic devices is an engaging challenge for future spin-based electronics. In these new devices, the information stored in a system of polarized electron spins, is transferred by applying an external electric field and finally detected. However, each initial non-equilibrium magnetization decays both in time and distance during the transport. Because of increasing miniaturization, to avoid too much intense electric fields, which could lead the system to exhibit a strongly nonlinear physical behavior, applied voltages are very low. Low voltages are subjected to the background noise; hence, it is mandatory to understand…

Noise-induced effectSpin relaxationMonte Carlo simulationSettore FIS/03 - Fisica Della MateriaGallium Arsenide
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Revisiting the metallothionein genes polymorphisms and the risk of oral squamous cell carcinoma in a Brazilian population

2020

Background Metallothioneins (MTs) gene polymorphisms have been associated with the ability of free radical scavenging and detoxification of heavy metals leading to cancer development. Our aim was to revisit, in a Brazilian population, single-nucleotide polymorphisms (SNPs) of the MT gene family previously associated with oral squamous cell carcinoma (OSCC). Material and Methods A case-control investigation with 28 OSCC patients and 45 controls was conducted, using conventional risk factors (tobacco use and alcohol consumption) as covariates. SNPs genotyping for rs8052334 (MT1B), rs964372 (MT1B), and rs1610216 (MT2A) was performed by PCR-RFLP, and SNPs for rs11076161 (MT1A) were analyzed by …

Oncologymedicine.medical_specialtyLinkage disequilibriumGenotypePopulationSingle-nucleotide polymorphismBiologygallium aluminium arsenide lasersPolymorphism Single NucleotideRisk FactorsOral Cancer and Potentially malignant disordersInternal medicineGenotypemedicineHumansSNPGenetic Predisposition to Diseasethird molareducationGeneral DentistryGenotypingUNESCO:CIENCIAS MÉDICASeducation.field_of_studycontrolled clinical trialSquamous Cell Carcinoma of Head and NeckResearchHaplotypestomatognathic diseasesOtorhinolaryngologyHead and Neck NeoplasmsCase-Control StudiesCarcinoma Squamous CellMetallothioneinMouth NeoplasmsSurgeryGene polymorphismBrazilMedicina Oral Patología Oral y Cirugia Bucal
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Parallel Recording of Single Quantum Dot Optical Emission Using Multicore Fibers

2016

Single Indium Arsenide Quantum Dot emission spectra have been recorded using a four-core, crosstalk-free, multicore fiber placed at the collection arm of a confocal microscope. We developed two different measurement set-ups depending on the relative configuration of the excitation and collection spots. In the single-matched mode, the emission from the excited area is collected by a single core in the multicore fiber, whereas the three remaining cores capture the emission from neighboring, non-excited areas. This procedure allows for the recording of the Quantum Dot emission from carrier diffusion between sample positions separated by more than 6 μm. In the multiple-matched mode, the ex…

Optical fiberMicroscopeMaterials science02 engineering and technologylaw.inventionSingle Quantum Dotchemistry.chemical_compound020210 optoelectronics & photonicsOpticslawTEORIA DE LA SEÑAL Y COMUNICACIONES0202 electrical engineering electronic engineering information engineeringMulticore fibersEmission spectrumStimulated emissionElectrical and Electronic EngineeringSpectroscopybusiness.industry021001 nanoscience & nanotechnologyAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialschemistryQuantum dot laserQuantum dotExcited stateOptoelectronicsIndium arsenide0210 nano-technologybusiness
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Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures

2002

5 páginas, 4 figuras.

PhotoluminescenceCondensed matter physicsCondensed Matter::OtherChemistryExcitonHeterojunctionSurfaces and InterfacesQuantum effectsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsSurfaces Coatings and FilmsGallium arsenideCondensed Matter::Materials Sciencechemistry.chemical_compoundQuantum wellsGallium arsenideMaterials ChemistryContinuous wavePhotoluminescenceMolecular beam epitaxyBiexcitonQuantum wellMolecular beam epitaxySurface Science
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Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

1999

Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…

PhotoluminescenceMaterials scienceIII-V semiconductorsSiliconExcitonBinding energyGeneral Physics and Astronomychemistry.chemical_elementBinding energyEpitaxyMolecular physicssymbols.namesakePhonon spectraLiquid phase epitaxial growth:FÍSICA [UNESCO]PhotoluminescenceAluminium compoundsX-ray absorption spectroscopyGallium arsenide Semiconductor growthImpurity statesDopingUNESCO::FÍSICASemiconductor epitaxial layersCrystallographychemistrysymbolsPhotoluminescence ; Binding energy ; Raman spectra ; III-V semiconductors ; Aluminium compounds ; Gallium arsenide Semiconductor growth ; Liquid phase epitaxial growth ; Semiconductor epitaxial layers ; Impurity states ; Excitons ; Phonon spectraExcitonsRaman spectraRaman spectroscopy
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Optical characterization of individual GaAs quantum dots grown with height control technique

2013

We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.

PhotoluminescenceMaterials scienceNanostructureGaAs Molecular Beam Epitaxy quantum nanostructures photoluminescencebusiness.industrySpatially resolvedGeneral Physics and AstronomyDecoupling (cosmology)EpitaxyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectGallium arsenidechemistry.chemical_compoundCondensed Matter::Materials SciencechemistryQuantum dot laserQuantum dotFISICA APLICADAOptoelectronicsbusinessFIS/03 - FISICA DELLA MATERIAEpitaxy
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