Search results for "Atomic layer"
showing 10 items of 140 documents
In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres
2019
Tarkista embargo, kun artikkeli julkaistu. Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex…
Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone
2016
The atomic layer deposition (ALD) of films with the approximate compositions Mn3(BO3)2 and CoB2O4 is described using MnTp2 or CoTp2 [Tp ¼ tris(pyrazolyl)borate] with ozone. The solid state decomposition temperatures of MnTp2 and CoTp2 are 370 and 340 C, respectively. Preparative-scale sublimations of MnTp2 and CoTp2 at 210 C/0.05 Torr afforded >99% recoveries with <0.1% nonvolatile residues. Self-limited ALD growth was demonstrated at 325 C for MnTp2 or CoTp2 with ozone as the coreactant. The growth rate for the manganese borate process was 0.19 A˚ /cycle within the ALD window of 300–350 C. The growth rate for the cobalt borate process was 0.39–0.42 A˚ /cycle at 325 C. X-ray diffraction of …
Micro-Raman characterization of graphene grown on SiC(000-1)
2014
Graphene (Gr) was grown on the C face of 4H-SiC under optimized conditions (high annealing temperatures ranging from 1850 to 1950°C in Ar ambient at 900 mbar) in order to achieve few layers of Gr coverage. Several microscopy techniques, including optical microscopy (OM), ?Raman spectroscopy, atomic force microscopy (AFM) and atomic resolution scanning transmission electron microscopy (STEM) have been used to extensively characterize the lateral uniformity of the as-grown layers at different temperatures. ?Raman analysis provided information on the variation of the number of layers, of the stacking-type, doping and strain.
Atomic layer deposition of lithium containing thin films
2009
Five different lithium containing compounds, all representing different chemical systems, were studied in order to deposit lithium containing films by atomic layer deposition ALD. The studied compounds were a lithium β-diketonate Li(thd) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate), a lithium alkoxide LiOtBu (OtBu = tert-butoxide), a lithium cyclopentadienyl LiCp (Cp = cyclopentadienyl), a lithium alkyl n-butyllithium, and a lithium amide lithium dicyclohexylamide. Films containing lithium carbonate (Li2CO3) were obtained from alternate pulsing of Li(thd) and ozone in a temperature range of 185–300 °C. The film composition was analyzed by time-of-flight elastic recoil detection analysis (…
ALD thin ZnO layer as an active medium in a fiber-optic Fabry–Perot interferometer
2015
Abstract A novel optical fiber sensor of temperature using a thin ZnO layer fabricated by atomic layer deposition (ALD) is demonstrated for the first time. The thin ZnO layer was grown on the face of a standard optical telecommunication fiber SMF-28 and operates as a Fabry–Perot interferometer sensitive to temperature. The interferometer characterization was made in the temperature range extending from 50 to 300 °C with resolution equal to 1 °C. The output signal was analyzed by measurement of the shift of the maxima in spectral pattern. The sensitivity of temperature measurement is about 0.05 nm/°C. Furthermore, very good linearity of the sensor was achieved with correlation coefficient R2…
Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
2013
Impurities in aluminum nitride films prepared by plasma enhanced atomic layer deposition using NH3-, N2/H2- and N2-based plasmas are investigated by combining time-of-flight elastic recoil detection analysis (ERDA) and Fourier transform infrared spectroscopy. Different atomistic growth mechanisms are found to exist between the plasma chemistries. N2-plasma is shown as not suitable for the low-temperature deposition of AlN. Films deposited by NH3- and N2/H2-based processes are nitrogen rich and heavily hydrogenated. Carbon impurities exist at higher concentrations for the N2/H2-processes. The discovery of nitrile groups in the films indicates that carbon impurities can be partially attribute…
Studies on atomic layer deposition of MOF-5 thin films
2013
International audience; Deposition of MOF-5 thin films from vapor phase by atomic layer deposition (ALD) was studied at 225-350 degrees C. Zinc acetate (ZnAc2) and 1,4-benzenedicarboxylic acid (1,4-BDC) were used as the precursors. The resulting films were characterized by UV-Vis spectrophotometry, Fourier transform infrared spectroscopy (FTIR), optical microscopy, X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), time-of-flight elastic recoil detection analysis (TOF-ERDA), isopropanol adsorption tests, and nanoindentation. It was found out that the as-deposited films were amorphous but crystallized in humid conditions at room temperature. The crystalline films h…
Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films
2020
Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.
Atomic layer deposition and characterization of biocompatible hydroxyapatite thin films
2009
Abstract Atomic layer deposition (ALD) was used to produce hydroxyapatite from Ca(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) and (CH 3 O) 3 PO onto Si(100) and Corning (0211). Film crystallinity, stoichiometry, possible impurities and surface morphology were determined. The as-deposited films contained significant amounts of carbonate impurities however, annealing at moist N 2 flow reduced the carbonate content even at 400 °C. The as-deposited Ca–P–O films were amorphous but rapid thermal annealing promoted the formation of the hydroxyapatite phase. Mouse MC 3T3-E1 cells were used for the cell culture experiments. According to the bioactivity studies cell proliferation was enhanc…
Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxide Thin Films
2010
ZrO 2 films doped with Er 2 O 3 were grown by atomic layer deposition from tris(2,2,6,6-tetramethyl-3,5-heptanedionato)erbium, bis(methylcyclopentadienyl)methoxymethylzirconium, and ozone as precursors at 350°C. The erbium content was 1―5 cation %. The films were uniform in thickness. The ZrO 2 :Er 2 O 3 films were crystallized already in the as-deposited state. Upon annealing at 650°C, they were stabilized in the form of cubic or tetragonal polymorph of ZrO 2 . Enhancement in capacitance required intense crystallization that was observed when the film thickness exceeded 4.4 nm. The permittivity of the ZrO 2 :Er 2 O 3 films could reach 31. The capacitors based on the doped ZrO 2 possessed l…