Search results for "CONDUCTIVITY"
showing 10 items of 1988 documents
Cubic metamaterial crystal supporting broadband isotropic chiral phonons
2021
Chiral metamaterials can support chiral phonons leading to acoustical activity, the acoustical counterpart of optical activity. However, the properties of early metamaterial designs have been very highly anisotropic, and chiral acoustical phonons occurred only for selected high-symmetry directions. The authors propose a novel chiral metamaterial based on ``twisting'' a truncated octahedron in a simple-cubic unit cell. Not supported by crystal symmetry alone but rather by a tuned degeneracy, chiral phonons and large broadband acoustical activity are obtained for all phonon propagation directions in 3D. This result is notable because even isotropic achiral acoustical phonons are rare for crys…
Thickness-dependent electron momentum relaxation times in iron films
2020
Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This current response time decreases from 29 fs for thickest films to 7 fs for the thinnest films. The macroscopic response time is not strictly proportional to the conductivity. This excludes the existence of a single relaxation time universal for all conduction electrons. We must assume a distribution of microscopic momentum relaxation times. The macroscopic response time depends on average and variation of this distribution; the observed deviation between response time and conductivity scaling corresponds to the scaling…
Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions
2014
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and Cu-TaO$_{x}$-TaN$_{x} $), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature $T_{\text{C}}$ of the TaN$_{x} $ film at $\sim 5$ K down to $\sim$ 0.5 K. Numerical simulations were also performe…
INTERPRETATION OF POTENTIAL INTERMITTENCE TITRATION TECHNIQUE EXPERIMENTS FOR VARIOUS Li-INTERCALATION ELECTRODES
2002
In this paper we compare two different approaches for the calculation of the enhancement factor Wi , based on its definition as the ratio of the chemical and the component diffusion coefficients for species in mixed-conduction electrodes, originated from the “dilute solution” or “lattice gas” models for the ion system. The former approach is only applicable for small changes of the ion concentration while the latter allows one to consider a broad range of intercalation levels. The component diffusion coefficient of lithium ions has been determined for a series of lithium intercalation anodes and cathodes. A new “enhancement factor” for the ion transport has been defined and its relations to…
A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission
2010
This work reports on hard x-ray photoelectron spectroscopy (HAXPES) of CoFeB based tunnel junctions. Aim is to explain the role of the boron diffusion for the observed improvement of the tunneling magnetoresistance ratio with increasing annealing temperature. The high bulk sensitivity of HAXPES was used as a nondestructive technique to analyze CoFeB–MgO–CoFeB magnetic tunnel junctions. The investigated samples were processed at different annealing temperatures from 523 to 923 K. Hard x-ray core level spectroscopy reveals an enforced diffusion of boron from the CoFeB into the adjacent Ta layer with increasing annealing temperature. The dependence of the tunneling magnetoresistance on the ann…
Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices
2018
The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…
Antenna-coupled spintronic terahertz emitters driven by a 1550 nm femtosecond laser oscillator
2019
We demonstrate antenna-coupled spintronic terahertz (THz) emitters excited by 1550 nm, 90 fs laser pulses. Antennas are employed to optimize THz outcoupling and frequency coverage of ferromagnetic/nonmagnetic metallic spintronic structures. We directly compare the antenna-coupled devices to those without antennas. Using a 200 μm H-dipole antenna and an ErAs:InGaAs photoconductive receiver, we obtain a 2.42-fold larger THz peak-peak signal, a bandwidth of 4.5 THz, and an increase in the peak dynamic range (DNR) from 53 dB to 65 dB. A 25 μm slotline antenna offered 5 dB larger peak DNR and a bandwidth of 5 THz. For all measurements, we use a comparatively low laser power of 45 mW from a comme…
Thermal characteristics of silicon nitride membranes at sub-Kelvin temperatures
1998
We have performed calorimetric measurements on 200 nm thin silicon nitride membranes at temperatures from 0.07 to 1 K. Besides full windows, membranes cut into a thermally isolating suspended bridge geometry were investigated. Based on dc and ac measurements employing normal-metal/insulator/superconductor (NIS) tunnel junctions both as a thermometer and a heater, we report on heat transport and thermal relaxation in silicon nitride films. The bridge structure improves thermal isolation and, consequently, energy sensitivity by two orders of magnitude over those of the full membrane with the same size, and makes such a structure very attractive for bolometric and microrefrigeration applicatio…
Optical investigation of the OH− groups in the LiNbO3 doped by copper
2019
Doping ions and OH− groups absorption bands spatial profiles were investigated for the case of congruent LiNbO3 single crystal grown by Czochralski technique. Doping was performed after the crystal...
Are AuPdTM (T = Sc, Y and M = Al, Ga, In), Heusler Compounds Superconductors without Inversion Symmetry?
2019
Heusler compounds with 2:1:1 stoichiometry either have a centrosymmetric Cu 2 MnAl structure or an Li 2 AgSb structure without a centre of inversion. The centrosymmetry is always lost in quaternary Heusler compounds with 1:1:1:1 stoichiometry and LiMgPdSn structure. This presents the possibility of realizing non-centrosymmetric superconductors in the family of Heusler compounds. The objective of this study is to search for and investigate such quaternary derivatives of Heusler compounds, particularly with respect to superconductivity. Several compounds were identified by carrying out calculations from first principles and superconductivity was observed in experiments conducted on AuPdScAl a…