Search results for "Chalcogenide"
showing 10 items of 141 documents
Holographic recording in amorphous chalcogenide semiconductor thin films
2003
Abstract A detailed study of the amorphous As–S–Se and As2S3 films as recording media for optical holography and electron beam lithography is presented. The results of R&D on resist based on the amorphous As–S–Se thin films for manufacturing of embossed holographic labels are discussed. The holographic recording of transmission and Bragg gratings was studied.
Amorphous As–S–Se semiconductor resists for holography and lithography
2002
Abstract The photo- and electron-beam induced changes in solubility of thin films of the amorphous chalcogenide semiconductors As–S–Se and As 2 S 3 have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement (SE) phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency (DE) of the holograms.
<title>Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography</title>
2001
The photo- and electron beam induced changes in solubility of amorphous chalcogenide semiconductor As-S-Se and As2S3 thin films have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
<title>Photo-induced structural changes in near-surface layers of chalcogenide semiconductors</title>
1997
Photoinduced structural changes in near-surface layers of amorphous As-Se and As-S films have been investigated using the microhardness method. Microhardness via indentation depth data for as-deposited, illuminated and aged in ambient atmosphere films is presented. The results obtained show that photoinduced increase in microhardness of surface layers up to approximately 1 - 1.5 micrometer are more pronounced in comparison with deeper layers. Increase in microhardness of the investigated films under exposure to atmosphere was also observed. Atmosphere-induced effect was more pronounced in the case of As-S films. Photo- and atmosphere-induced effects in the near-surface layers were found to …
Fourth order cascaded Raman shift in As38Se62 chalcogenide suspended core fiber pumped at 1.995 μm
2011
Fourth order cascaded Raman wavelength shift is demonstrated in As 38 Se 62 suspended core fiber using 1995 nm nanosecond source. The measured Raman gain coefficient is∼2×10−11 m/W at 1995 nm. The Raman peaks are reproduced by numerical simulations.
ZnS Ultrathin interfacial layers for optimizing carrier management in Sb2S3-based photovoltaics
2021
Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over th…
Holographic recording in amorphous chalcogenide thin films
2007
Abstract Holographic recording by He–Ne laser (line 632.8 nm) light in amorphous As 0.55 Se 0.45 thin films for different film thickness and grating period was studied. A strong dependence of the diffraction efficiency of the gratings on the readout light wavelength (650 nm, 805 nm and 1150 nm) was observed. A decrease in diffraction efficiency for longer wavelengths is explained by a decrease in the photoinduced changes of refractive index. It is shown that high efficiency gratings can be recorded in As 0.55 Se 0.45 films with a thickness of ∼1 μm.
Optical-field induced volume- and surface-relief formation phenomenon in thin films of vitreous chalcogenide semiconductors
2013
In this report the study of direct recording of the surface relief gratings on amorphous chalcogenide thin (2.5-5μm) films is presented by three different recording setups. Recording was performed on As2S3 by 532nm wavelength laser light. Additionally the evolution of surface relief in dependence from the recording time and polarization has been investigated in detail. The mechanism of the direct recording of surface relief on amorphous chalcogenide films based on the photo-induced plasticity has been discussed.
Chalcogenide glass hollow core photonic crystal fibers
2010
International audience; We report the first hollow core photonic crystal fibers (HC PCF) in chalcogenide glass. To design the required HC PCF profiles for such high index glass, we use both band diagram analysis to define the required photonic bandgap and numerical simulations of finite size HC PCFs to compute the guiding losses. The material losses have also been taken into account to compute the overall losses of the HC PCF profiles. These fibers were fabricated by the stack and draw technique from Te20As30Se50 (TAS) glass. The fibers we drew in this work are composed of six rings of holes and regular microstructures. Two profiles are presented, one is known as a kagome lattice and the ot…
chalcogenide materials for nonlinear integreted optics in mid-infrared
2019
Elaboration and characterization of new compositions of chalcogenide materials exhibiting nonlinear effects for integrated optic applications and fabrication of low-loss waveguides.