Search results for "Conde"

Plasma instabilities of a charge breeder ECRIS

2017

International audience; Experimental observation of plasma instabilities in a charge breeder electron cyclotron resonance ion source (CB-ECRIS) is reported. It is demonstrated that the injection of 133Cs+ or 85Rb+ ion beam into the oxygen discharge of the CB-ECRIS can trigger electron cyclotron instabilities, which restricts the parameter space available for the optimization of the charge breeding efficiency. It is concluded that the transition from a stable to unstable plasma regime is caused by gradual accumulation and ionization of Cs/Rb and simultaneous change of the discharge parameters in 10–100 ms time scale, not by a prompt interaction between the incident ion beam and the ECRIS pla…

SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

2019

Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…

2018

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ell…

Emerging blue-UV luminescence in cerium doped YAG nanocrystals

2016

Physica status solidi / Rapid research letters 10(6), 475 - 479(2016). doi:10.1002/pssr.201600041

High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

2018

Experimental and numerical investigation of laboratory crystal growth furnace for the development of model-based control of CZ process

2019

Abstract The presented study is focused on laboratory Czochralski crystal growth experiments and their mathematical modelling. The developed small-scale CZ crystal growth furnace is described as well as the involved automation systems: crystal radius detection by image recognition, temperature sensors, adjustable heater power and crystal pull rate. The CZ-Trans program is used to model the experimental results – transient, 2D axisymmetric simulation software primarily used for modelling of the industrial-scale silicon crystal growth process. Poor agreement with the experimental results is reached; however, the proven ability to perform affordable, small-scale experiments and successfully mo…

Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors

2019

GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.

Spectroscopic study of ion temperature in minimum-B ECRIS plasma

2019

Experimentally determined ion temperatures of different charge states and elements in minimum-B confined electron cyclotron resonance ion source (ECRIS) plasma are reported. It is demonstrated with optical emission spectroscopy, complemented by the energy spread measurements of the extracted ion beams, that the ion temperature in the JYFL 14 GHz ECRIS is 5–28 eV depending on the plasma species and charge state. The reported ion temperatures are an order of magnitude higher than previously deduced from indirect diagnostics and used in simulations, but agree with those reported for a quadrupole mirror fusion experiment. The diagnostics setup and data interpretation are discussed in detail to …

Influence of surface topography on depth profiles obtained by Rutherford backscattering spectrometry

2000

A method for determining correct depth profiles from samples with rough surfaces is presented. The method combines Rutherford backscattering spectrometry with atomic force microscopy. The topographical information obtained by atomic force microscopy is used to calculate the effect of the surface roughness on the backscattering spectrum. As an example, annealed Au/ZnSe heterostructures are studied. Gold grains were observed on the surfaces of the annealed samples. The annealing also caused diffusion of gold into the ZnSe. Backscattering spectra of the samples were measured with a 2 MeV 4He+ ion beam. A scanning nuclear microprobe was used to verify the results by measuring backscattering fro…

Study of the Secondary Electron Yield in Dielectrics Using Equivalent Circuital Models

2018

[EN] Secondary electron emission has an important role on the triggering of the multipactor effect; therefore, its study and characterization are essential in radio-frequency waveguide applications. In this paper, we propose a theoretical model, based on equivalent circuit models, to properly understand charging and discharging processes that occur in dielectric samples under electron irradiation for secondary electron emission characterization. Experimental results obtained for Pt, Si, GaS, and Teflon samples are presented to verify the accuracy of the proposed model. Good agreement between theory and experiments has been found.